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INCHANGE Semiconductor Product Specification
Silicon PNP Power Transistors BD544/A/B/C
DESCRIPTION
·70 W at 25°C Case Temperature
·Complement to Type BD543/A/B/C
·8 A Continuous Collector Current
APPLICATIONS
·Designed for high power audio amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
V
Collector-Base Voltage
CBO
BD544 -40
BD544A -60
V
BD544B -80
BD544C -100
BD544 -40
BD544A -60
V
Collector-Emitter Voltage
CEO
BD544B -80
BD544C -100
V
Emitter-Base Voltage -5 V
EBO
IC Collector Current-Continuous -8 A
ICM Collector Current-Peak -10 A
Collector Power Dissipation
=25℃
@ T
PC
TJ Junction Temperature 150
T
stg
C
Collector Power Dissipation
=25℃
@ T
a
Storage Temperature Range -65~150
70
2
THERMAL CHARACTERISTICS
V
W
℃
℃
SYMBOL PARAMETER MAX UNIT
R
R
th j-c
th j-a
Thermal Resistance,Junction to Case 4.17
Thermal Resistance,Junction to Ambient 62.5
℃/W
℃/W
Page 2
INCHANGE Semiconductor Product Specification
Silicon PNP Power Transistors BD544/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
BD544 -40
V
(BR)CEO
V
CE(
V
CE(
V
CE(
V
BE(on)
I
CES
sat
sat
sat
Collector-Emitter
Breakdown Voltage
BD544A -60
BD544B -80
BD544C
Collector-Emitter Saturation Voltage I
)-1
Collector-Emitter Saturation Voltage I
)-2
Collector-Emitter Saturation Voltage I
)-3
Base-Emitter On Voltage I
BD544 VCE= -40V; VBE= 0 -0.4
Collector
Cutoff Current
BD544A VCE= -60V; VBE= 0 -0.4
BD544B VCE= -80V; VBE= 0 -0.4
BD544C V
IC= -30mA ; IB= 0
V
-100
= -3A; IB= -0.3A -0.5 V
C
= -5A; IB= -1A -0.5 V
C
= -8A; IB= -1.6A -1.0 V
C
= -5A; VCE= -4V -1.4 V
C
= -100V; VBE= 0
CE
-0.4
mA
Collector
Cutoff Current
Emitter Cutoff Current VEB= -5V; IC= 0 -1 mA
DC Current Gain IC= -1A ; VCE= -4V 60
DC Current Gain IC= -3A ; VCE= -4V 40
DC Current Gain IC= -5A ; VCE= -4V 15
h
h
h
I
CEO
I
EBO
FE-1
FE-2
FE-3
BD544/A VCE= -30V; IB= 0 -0.7 mA
BD544B/C V
= -60V; IB= 0
CE
Switching Times
ton
t
off
Turn-On Time 0.4
Turn-Off T ime
I
= -6A; IB1= -IB2= -0.6A;
C
= 4V, RL= 5Ω
V
BE(
)
off
0.7
2
μs
μs
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