Datasheet BD539D, BD539C, BD539B, BD539A, BD539 Datasheet (Power Innovations)

● Designed for Complementary Use with the

BD540 Series

● 45 W at 25°C Case Temperature

BD539, BD539A, BD539B, BD539C, BD539D

NPN SILICON POWER TRANSISTORS

JUNE 1973 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK

TO-220 PACKAGE

(TOP VIEW)

● 5 A Continuous Collector Current

● Up to 120 V V

CEO

rating

B
C
E

Pin 2 is in electrical contact with the mounting base.

1
2
3

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT

BD539
BD539A

Collector-base voltage

Collector-emitter voltage (see Note 1)

Emitter-base voltage V
Continuous collector current I
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P
Operating free air temperature range T
Operating junction temperature range T
Storage temperature range T
Lead temperature 3.2 mm from case for 10 seconds T

NOTES: 1. These values apply when the base-emitter diode is open circuited.

2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

BD539B
BD539C
BD539D
BD539
BD539A
BD539B
BD539C
BD539D

V

V

CBO

CEO

EBO

C
tot
tot

A

j

stg

L

MDTRACA

40
60

80
100
120

40

60

80
100
120

5 V
5 A

45 W

2 W

-65 to +150 °C

-65 to +150 °C

-65 to +150 °C
260 °C

V

V

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.

1

BD539, BD539A, BD539B, BD539C, BD539D
NPN SILICON POWER TRANSISTORS

JUNE 1973 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

BD539
BD539A
BD539B
BD539C
BD539D
BD539
BD539A
BD539B
BD539C
BD539D
BD539/539A
BD539B/539C
BD539D

(see Notes 4 and 5)

(see Notes 4 and 5)

V

(BR)CEO

I

CES

I

CEO

I

EBO

h

V

CE(sat)

V

BE(on)

h

|hfe|

Collector-emitter
breakdown voltage

Collector-emitter
cut-off current

Collector cut-off
current

Emitter cut-off
current

Forward current

FE

transfer ratio

Collector-emitter
saturation voltage

Base-emitter
voltage
Small signal forward

fe

current transfer ratio
Small signal forward
current transfer ratio

= 30 mA

I

C

IB = 0

(see Note 4)

V

= 40 V

CE

= 60 V

V

CE

= 80 V

V

CE

= 100 V

V

CE

= 120 V

V

CE

V

= 30 V

CE

= 60 V

V

CE

= 90 V

V

CE

= 5 V IC= 0 1 mA

V

EB

V

= 4 V

CE

= 4 V

V

CE

= 4 V

V

CE

I

= 125 mA

B

= 375 mA

I

B

= 1 A

I

B

= 4 V IC= 3 A (see Notes 4 and 5) 1.25 V

V

CE

= 10 V IC= 0.5 A f = 1 kHz 20

V

CE

= 10 V IC= 0.5 A f = 1 MHz 3

V

CE

V

BE

V

BE

V

BE

V

BE

V

BE

I

B

I

B

I

B

I

C

I

C

I

C

I

C

I

C

I

C

= 0
= 0
= 0
= 0

= 0
= 0
= 0
= 0

= 0.5 A
= 1 A
= 3 A
= 1 A
= 3 A
= 5 A

NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

40
60

80
100
120

40

30

12

0.2

0.2

0.2

0.2

0.2

0.3

0.3

0.3

0.25

0.8

1.5

V

mA

mA

V

thermal characteristics

PARAMETER MIN TYP MAX UNIT

R
R

Junction to case thermal resistance 2.78 °C/W

θJC

Junction to free air thermal resistance 62.5 °C/W

θJA

resistive-load-switching characteristics at 25°C case temperature

PARAMETER TEST CONDITIONS

Turn-on time IC = 1 A

t

on

t

Turn-off time 2 µs

off

†

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

V

BE(off)

= -4.3 V

I

B(on)

= 30 Ω

R

L

= 0.1 A

†

I

= -0.1 A

B(off)

= 20 µs, dc ≤ 2%

t

p

PRODUCT INFORMATION

MIN TYP MAX UNIT

0.5 µs

2

BD539, BD539A, BD539B, BD539C, BD539D

NPN SILICON POWER TRANSISTORS

TYPICAL CHARACTERISTICS

JUNE 1973 - REVISED MARCH 1997

TYPICAL DC CURRENT GAIN

vs

COLLECTOR CURRENT

1000

VCE = 4 V
tp = 300 µs, duty cycle < 2%

100

- DC Current Gain

FE

h

10

0·01 0·1 1·0 10

IC - Collector Current - A

TC = 25°C
TC = 80°C

Figure 1. Figure 2.

TCS631AH

COLLECTOR-EMITTER SATURATION VOLTAGE

vs

BASE CURRENT

10

1·0

0·1

- Collector-Emitter Saturation Voltage - V

V

IC = 100 mA
IC = 300 mA
IC = 1 A

CE(sat)

IC = 3 A

0·01

0·1 1·0 10 100 1000

IB - Base Current - mA

TCS631AB

BASE-EMITTER VOLTAGE

vs

COLLECTOR CURRENT

1·0

VCE = 4 V
TC = 25°C

0·9

0·8

0·7

- Base-Emitter Voltage - V

BE

V

0·6

0·5

0·01 0·1 1·0 10

IC - Collector Current - A

Figure 3.

TCS631AC

PRODUCT INFORMATION

3

BD539, BD539A, BD539B, BD539C, BD539D
NPN SILICON POWER TRANSISTORS

JUNE 1973 - REVISED MARCH 1997

MAXIMUM SAFE OPERATING REGIONS

MAXIMUM FORWARD-BIAS

SAFE OPERATING AREA

10

1·0

- Collector Current - A

0·1

C

I

BD539
BD539A
BD539B
BD539C

0·01

1·0 10 100 1000

BD539D

VCE - Collector-Emitter Voltage - V

SAS631AI

Figure 4.

THERMAL INFORMATION

MAXIMUM POWER DISSIPATION

vs

CASE TEMPERATURE

50

40

30

20

- Maximum Power Dissipation - W

tot

10

P

0

0 25 50 75 100 125 150

TC - Case Temperature - °C

TIS631AC

PRODUCT INFORMATION

4

Figure 5.

BD539, BD539A, BD539B, BD539C, BD539D

Version 1, 18.0 mm. Version 2, 17.6 mm.

NPN SILICON POWER TRANSISTORS

JUNE 1973 - REVISED MARCH 1997

MECHANICAL DATA

TO-220

3-pin plastic flange-mount package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.

TO220

3,96

ø

3,71

see Note B

see Note C

0,97
0,61

10,4
10,0

1 2 3

1,70
1,07

2,74
2,34

5,28
4,88

2,95
2,54

6,1
3,5

4,70
4,20

1,32
1,23

6,6
6,0

15,90
14,55

14,1
12,7

0,64
0,41

2,90
2,40

NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.

PRODUCT INFORMATION

VERSION 2 VERSION 1

ALL LINEAR DIMENSIONS IN MILLIMETERS

MDXXBE

5

BD539, BD539A, BD539B, BD539C, BD539D
NPN SILICON POWER TRANSISTORS

JUNE 1973 - REVISED MARCH 1997

IMPORTANT NOTICE

Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.

PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.

PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.

PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.

Copyright © 1997, Power Innovations Limited

PRODUCT INFORMATION

6