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Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors BD533/535/537
DESCRIPTION ·
·With TO-220C package
·Complement to type BD534/536/538
·Low saturation voltage
APPLICATIONS
·For medium power linear and
switching applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings (Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage
CBO
V
Collector-emitter voltage
CEO
V
Emitter-base voltage Open collector 5 V
EBO
IC Collector current 8 A
℃)
BD533 45
BD535 60
BD537
BD533 45
BD535 60
BD537
Open emitter
80
Open base
80
V
V
IE Emitter current 8 A
IB Base current 1 A
T
PC Collector power dissipation
Tj Junction temperature 150
T
Storage temperature -65~150
stg
=25℃
C
50 W
℃
℃
Page 2
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors BD533/535/537
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter saturation voltage IC=2 A;IB=0.2 A 0.8 V
CEsat-1
V
Collector-emitter saturation voltage IC=6 A;IB=0.6 A 0.8 V
CEsat-2
V
Base-emitter on voltage IC=2A ; VCE=2V 1.5 V
BE
BD533 VCB=45V; IE=0
I
Collector cut-off current
CBO
BD535 VCB=60V; IE=0
BD537 VCB=80V; IE=0
BD533 VCE=45V; VBE=0
0.1 mA
I
Collector cut-off current
CES
I
Emitter cut-off current VEB=5V; IC=0 1 mA
EBO
h
DC current gain
FE-1
h
DC current gain IC=0.5A ; VCE=2V 40
FE-2
h
FE-3
h
FE-4
fT Transition frequency IC=0.5A ; VCE=1V 3 12 MHz
DC current gain
(All device)
DC current gain
(All device)
BD535 VCE=60V; VBE=0
BD537 V
BD533/535 20
BD537
Group: J 30 75
Group: K
Group: J 15
Group: K
=80V; VBE=0
CE
IC=10mA ; VCE=5V
=2A ; VCE=2V
I
C
IC=3A ; VCE=2V
0.1 mA
15
40
20
100
2
Page 3
Inchange Semiconductor Product Specification
固电半导体
INCHANGE SEMICONDUCTOR
Silicon NPN Power Transistors BD533/535/537
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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