Page 1
BD239/A/B/C
Medium Power Linear and Switching
Applications
• Complement to BD240/A/B/C respectively
BD239/A/B/C
TO-220
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
TC=25°C unless otherwise noted
1
1.Base 2.Collector 3.Emitter
Symbol Parameter Value Units
V
CEO
V
CER
VEBO
I
C
ICP
IB
P
C
T
J
T
STG
Electrical Characteristics
Collector-Emitter Voltage
: BD239
: BD239A
: BD239B
: BD239C
45
60
80
100
Collector-Emitter Voltage
: BD239
: BD239A
: BD239B
: BD239C
55
70
90
115
Emitter-Base Voltage 5 V
Collector Current (DC) 2 A
*Collector Current (Pulse) 4 A
Base Current 0.6 A
Collector Dissipation (TC=25°C) 30 W
Junction Temperature 150 °C
Storage T emperature - 65 ~ 150 °C
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
V
(sus) *Collector-Emitter Sustaining Voltage
CEO
: BD239
: BD239A
= 30mA, IB = 0
I
C
: BD239B
: BD239C
I
CEO
Collector Cut-off Current
: BD239/A
: BD239B/C
ICES
Collector Cut-off Current
: BD239
: BD239A
: BD239B
: BD239C
IEBO
hFE
(sat) *Collector-Emitter Saturation Voltage IC = 1A, IB = 0.2A 0.7 V
VCE
(on) *Base-Emitter ON Voltage V
V
BE
* Pulse Test: PW=350µs, duty Cycle≤2.0% Pulsed
Emitter Cut-off Current V
*DC Current Gain V
= 30V, IB = 0
V
CE
V
= 60V, IB = 0
CE
= 45V, V
V
CE
V
= 60V, V
CE
= 80V, V
V
CE
= 100V, V
V
CE
= 5V, IC = 0 1 mA
EB
= 4V, IC = 0.2A
CE
V
= 4V, IC = 1A
CE
= 4V, IC = 1A 1.3 V
CE
BE
BE
BE
BE
= 0
= 0
= 0
= 0
45
60
80
100
0.3
0.3
0.2
0.2
0.2
0.2
40
15
V
V
V
V
V
V
V
V
V
V
V
V
mA
mA
mA
mA
mA
mA
©2000 Fairchild Semiconductor International Rev. A, February 2000
Page 2
Package Demensions
±0.10
(1.70)
1.30
±0.20
9.20
(1.46)
9.90
(8.70)
ø3.60
TO-220
±0.20
±0.10
(45°)
(3.70)(3.00)
±0.10
2.80
±0.20
15.90
18.95MAX.
4.50
1.30
±0.20
+0.10
–0.05
BD239/A/B/C
±0.20
13.08
(1.00)
1.27
2.54TYP
[2.54
±0.10
±0.20
]
10.00
±0.20
1.52
±0.10
0.80
±0.10
2.54TYP
±0.20
[2.54
±0.30
10.08
+0.10
0.50
–0.05
2.40
±0.20
]
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. A, February 2000
Page 3
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not intended to be an exhaustive list of all such trademarks.
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2
E
CMOS™
FACT™
FACT Quiet Series™
®
FAST
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2000 Fairchild Semiconductor International Rev. E
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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