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BD235/BD236
BD237/BD238
COMPLEMENTARY SILICON POWER TRANSISTORS
■ SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION
The BD235 and BD237 are silicon epitaxial-base
NPN power transistors in Jedec SOT-32 plastic
package inteded for use in medium power linear
and switching applications.
The complementary PNP types are BD236 and
BD238 respectively.
SOT-32
1
2
3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN BD235 BD237
PNP BD236 BD238
V
V
V
V
I
P
T
For PNPtypes voltage and current values are negative.
Collect or- B as e Voltage (IE=0) 60 100 V
CBO
Collect or- B as e Voltage (RBE=1KΩ)60100V
CER
Collector-Emitter Voltage ( IB=0) 60 80 V
CEO
Emitter-Base Voltage (IC=0) 5 V
EBO
Collect or Current 2 A
I
C
Collect or Peak C ur rent 6 A
CM
Tot al Diss ipa t ion at Tc=25oC25W
tot
Storage Temperature -65 to 150
stg
Max. Operat ing Junction Temperat u re 150
T
j
o
C
o
C
September 1997
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BD235/BD236/BD237/BD238
THERMAL DATA
R
thj-case
Ther mal Resistance J u nc t io n-c ase Max 5
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Condition s Min. Typ. Max. Unit
I
CBO
I
EBO
V
CEO(sus)
V
CE(sat)
Collector Cut- of f
Current (I
E
=0)
Emit ter Cut-o f f Current
=0)
(I
C
∗ Collector-Emitt er
Sust aining V olt age
∗ Collector-Emitt er
V
=ratedV
CE
VCE=ratedV
V
=5V 1 mA
EB
CEO
CEOTc
=150oC
0.1
2
IC=100mA
for BD235/ BD236
for BD237/ BD238
60
80
IC=1A IB= 0.1 A 0.6 V
Saturation Voltage
∗ Base-Emitt er V oltage IC=1A VCE=2V 1.3 V
V
BE
h
∗ DC Curr ent Gain IC=150mA VCE=2V
FE
f
h
FE1/hFE2
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Tr ansition f r eque nc y IC=250mA VCE=10V 3 MHz
T
∗ Matched Pairs IC=150mA VCE=2V 1.6
=1 A VCE=2V
I
C
40
25
mA
mA
V
V
Safe Operating Area DeratingCurves
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BD235/BD236/BD237/BD238
DCCurrent Gain (NPN type)
Collector-Emitter Saturation Voltage (NPNtype)
DC Current Gain (PNPtype)
Collector-EmitterSaturationVoltage (PNPtype)
Base-EmitterSaturation Voltage (NPN type)
Collector-BaseCapacitance (PNP type)
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BD235/BD236/BD237/BD238
SOT-32(TO-126) MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 7.4 7.8 0.291 0.307
B 10.5 10.8 0.413 0.445
b 0.7 0.9 0.028 0.035
b1 0.49 0.75 0.019 0.030
C 2.4 2.7 0.040 0.106
c1 1.0 1.3 0.039 0.050
D 15.4 16.0 0.606 0.629
e 2.2 0.087
e3 4.15 4.65 0.163 0.183
F 3.8 0.150
G 3 3.2 0.118 0.126
H 2.54 0.100
H2 2.15 0.084
mm inch
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H2
0016114
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BD235/BD236/BD237/BD238
Informationfurnished is believed to be accurate and reliable.However, SGS-THOMSONMicroelectronics assumes no responsability for the
consequencesof use of such information nor for any infringementof patents or other rights of thirdparties which may results fromits use.No
license isgranted by implicationor otherwise underany patentor patentrights of SGS-THOMSONMicroelectronics.Specificationsmentioned
in this publicationare subjectto change without notice. This publicationsupersedesand replacesall informationpreviously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorizedfor useascritical componentsinlifesupport devicesor systemswithout express
written approvalof SGS-THOMSONMicroelectonics.
1997 SGS-THOMSONMicroelectronics - Printedin Italy- All Rights Reserved
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