Page 1
BD142
NPN SILICON TRANSISTOR
POWER LINERAR AND SWITCHING
APPLICATIONS
LF Large Signal Power Amplification
Low Saturation Voltage
High Dissipation Rating
Intended for a wide variety of intermediate-power applications.
It is especially suited for use in audio and inverter circuits at 12 volts.
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
V
V
V
V
I
I
P
T
T
C
B
CEO
EBO
CBO
CEX
T
J
S
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Emitter Voltage VBE=-1.5 V
Collector Current 15
Base Current 7
Power Dissipation @ TC = 25°
Junction Temperature
45 V
45 V
7V
50 V
117 Watts
-65 to +200 °C
Storage Temperature
A
A
COMSET SEMICONDUCTORS 1/3
Page 2
BD142
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
R
thJ-C
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol Ratings
V
CEO(BR)
V
CEX(BR)
V
CE(SAT)
Collector-Emitter
Breakdown Voltage (*)
Collector-Emitter
Breakdown Voltage (*)
Collector-Emitter Saturation
Voltage (*)
Test Condition(s)
IC=200 mA, IB=0
IC=100 mA, VBE=-1.5 V
IC=4 A, IB=0.4 A
1.5 °C/W
Min Typ Mx Unit
45 V
50 V
--1.1V
I
CEX
I
EBO
V
BE
Collector-Emitter Cutoff
Current
Emitter-Base Cutoff Current
Base-Emitter Voltage (*)
VCE=100 V
VBE=-1.5 V
VEB=7 V
IC=4.0 A, VCE=4.0V
--2mA
--1mA
--1.5V
COMSET SEMICONDUCTORS 2/3
Page 3
BD142
Symbol Ratings
I
S/B
h
21E
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
(1) collector-Emitter voltage limited et V
Second Breakdown
collector current
Static Forward Current
Transfer Ratio (*)
CEci
= V
MECHANICAL DATA CASE TO-3
DIMENSIONS
mm inches
A 25,51 1,004
B 38,93 1,53
C 30,12 1,18
D 17,25 0,68
E 10,89 0,43
G 11,62 0,46
H 8,54 0,34
L 1,55 0,6
M 19,47 0,77
N 1 0,04
P 4,06 0,16
Test Condition(s)
t=1s, VCE=39 V 3
VCE=4.0 V, IC=4.0 A 12.5
VCE=4.0 V, IC=0.5 A 20
rated by an auxiliary circuit
Min Typ Mx Unit
--A
- 160
-
--
Pin 1 : Base
Pin 2 : Emitter
Case : Collector
COMSET SEMICONDUCTORS 3/3
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