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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
TO-126 (SOT-32) Plastic Package
BD136, BD138, BD140
BD136, 138, 140 PNP PLASTIC POWER TRANSISTORS
Complementary BD135, 137, 139
Medium Power Linear and Switching Applications
PIN CONFIGURATION
1. EMITTER
2. COLLECTOR
3. BASE
1
2
3
ALL DIMENSIONS IN MM
ABSOLUTE MAXIMUM RATINGS
136 138 140
Collector-base voltage (open emitter) V
Collector-emitter voltage (open base) V
Collector current I
Total power dissipation up to T
= 25°C P
C
Junction temperature T
C
tot
j
CBO
CEO
max. 45 60 100 V
max. 45 60 80 V
max. 1.5 A
max. 12.5 W
max. 150 °C
Collector-emitter saturation voltage
= 0.5 A; IB = 0.05 A V
I
C
CEsat
max. 0.5 V
D.C. current gain
= 0.15 A; VCE = 2 V h
I
C
FE
min. 40
max. 250
RATINGS (at T
=25°C unless otherwise specified)
A
Limiting values 136 138 140
Collector-base voltage (open emitter) V
Collector-emitter voltage (open base) V
Emitter-base voltage (open collector) V
CBO
CEO
EBO
max. 45 60 100 V
max. 45 60 80 V
max. 5.0 V
Continental Device India Limited Data Sheet Page 1 of 3
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BD136, BD138, BD140
Collector current I
Base current I
Total power dissipation up to T
= 25°C P
A
C
B
tot
max. 1.5 A
max. 0.5 A
max. 1.25 W
Derate above 25°C max 1 0
Total power dissipation up to TC = 25°C P
tot
max. 12.5 W
Derate above 25°C max 1 00
Junction temperature T
Storage temperature T
j
stg
max. 150 °C
–65 to +150
THERMAL RESISTANCE
From junction to case R
From junction to ambient R
th jc
th ja
10 °
100 °
CHARACTERISTICS
T
= 25°C unless otherwise specified
amb
136 138 140
Collector cutoff current
= 0; VCB = 30 V I
I
E
I
= 0; VCB = 30 V; TC = 125°C I
E
CBO
CBO
max. 0.1 µA
max. 10 µ A
Emitter cut-off current
= 0; VEB = 5 V I
I
C
EBO
max. 10 µ A
Breakdown voltages
I
= 0.03 A; IB = 0 V
C
= 1 mA; IE = 0 V
I
C
= 1 mA; IC = 0 V
I
E
CEO(sus)
CBO
EBO
* min. 45 60 80 V
min. 45 60 100 V
min. 5.0 V
Saturation voltage
= 0.5 A; IB = 0.05 A V
I
C
* max. 0.5 V
CEsat
Base-emitter on voltage
I
= 0.5A; VCE = 2V V
C
* max. 1.0 V
BE(on)
D.C. current gain
= 0.005 A; VCE = 2 V* hFE* min. 25
I
C
mW/°C
mW/°C
ºC
C/W
C/W
I
= 0.15 A; VCE = 2 V** hFE* min. 40
C
max. 250
= 0.5 A; VCE = 2 V* hFE* min. 25
I
C
** h
classification: –6 min. 40
FE
max. 100
–10 min. 63
max. 160
–16 min. 100
max. 250
–25 min. 160
max. 400
* Pulse test: pulse width ≤ 300 µs, duty cycle ≤ 2%.
Continental Device India Limited Data Sheet Page 2 of 3
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Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for
application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to
confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/CD
is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information.
Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it
convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support
appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated
in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be
responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
e-mail [email protected] www.cdil.com
Continental Device India Limited Data Sheet Page 3 of 3
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