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■ SGS-THOMSONPREFERRED SALESTYPES
■ PNP TRANSISTOR
DESCRIPTION
The BD136, BD138 and BD140 are silicon
epitaxial planar PNP transistors in Jedec SOT-32
plastic package, designed for audio amplifiers
and drivers utilizing complementary or quasi
compementarycircuits.
The complementary NPN types are the BD135
BD137 and BD139.
BD136
BD138/BD140
PNP SILICON TRANSISTORS
1
2
3
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
BD136 BD138 BD140
V
V
V
I
P
P
T
Collect or- B as e Voltage (IE= 0) -45 -60 -80 V
CBO
Collector-Emitter Voltage ( IB= 0) -45 -60 -80 V
CEO
Emitter-Base Voltage ( IC=0) -5 V
EBO
Collect or Current -1. 5 A
I
C
Collect or Peak C ur rent -3 A
CM
Base Current -0.5 A
I
B
Tot al Dissipat ion at Tc≤ 25oC12.5W
tot
Tot al Dissipat ion at T
tot
Storage Temperature -65 to 1 50
stg
Max. O perating Junct i on Temperature 150
T
j
≤ 25oC1.25W
amb
o
C
o
C
June 1997
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BD136/BD138/BD140
THERMAL DATA
R
thj-case
Ther mal Resistance Ju nct ion-cas e Max 10
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test Cond ition s Min. Typ. Max. Unit
I
CBO
I
EBO
V
CEO(sus)
V
CE(sat)
Collector Cut -off
Current (I
E
=0)
Emit ter Cut- o f f C urr ent
=0)
(I
C
∗ Collector-Emitter
Sust aining Volt ag e
∗ Collector-Emitter
V
=-30V
CB
=-30V TC= 125oC
V
CB
V
=-5V -10 µA
EB
-0.1
-10
IC=-30mA
for B D136
for B D138
for B D140
-45
-60
-80
IC=-0.5A IB= -0 .05 A -0.5 V
Saturation Voltage
∗ Base-Emitt er V oltage IC=-0.5A VCE=-2V -1 V
V
BE
h
∗ DC Current Gain IC=-5mA VCE=-2V
FE
h
hFEGroups IC=-150mA VCE=-2V
FE
=-0.5A VCE=-2V
I
C
I
=-150mA VCE=-2V
C
25
25
40 250
for BD140 gr oup 10 63 160
∗
Pulsed: Pulse duration = 300µs, duty cycle 1.5 %
µA
µA
V
V
V
Safe Operating Areas
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SOT-32(TO-126)MECHANICAL DATA
BD136/BD138/BD140
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 7.4 7.8 0.291 0.307
B 10.5 10.8 0.413 0.445
b 0.7 0.9 0.028 0.035
b1 0.49 0.75 0.019 0.030
C 2.4 2.7 0.040 0.106
c1 1.0 1.3 0.039 0.050
D 15.4 16.0 0.606 0.629
e 2.2 0.087
e3 4.15 4.65 0.163 0.183
F 3.8 0.150
G 3 3.2 0.118 0.126
H 2.54 0.100
H2 2.15 0.084
mm inch
H2
0016114
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BD136/BD138/BD140
Informationfurnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumesno responsability forthe
consequencesof use of such informationnor for any infringementof patentsor other rightsof third partieswhich may results fromits use.No
license is grantedby implicationorotherwise underanypatentor patentrights ofSGS-THOMSONMicroelectronics. Specifications mentioned
in thispublication are subject tochange without notice. This publicationsupersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenotauthorizedfor useascriticalcomponents in lifesupportdevicesor systemswithout express
written approvalof SGS-THOMSONMicroelectonics.
1997SGS-THOMSONMicroelectronics -Printed in Italy- All RightsReserved
Australia- Brazil - Canada- China- France - Germany- Hong Kong- Italy- Japan- Korea -Malaysia -Malta - Morocco- The Netherlands-
Singapore - Spain- Sweden - Switzerland- Taiwan -Thailand - UnitedKingdom- U.S.A
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