Page 1
PNP Silicon AF Transistors BCX 78
BCX 79
● High current gain
● Low collector-emitter saturation voltage
● Low noise at 1 kHz
● Low noise at low frequencies
● Complementary types: BCX 58, BCX 59 (NPN)
2
3
1
Type Ordering CodeMarking
BCX 78
– TO-92
BCX 78-VII
BCX 78-VIII
BCX 78-IX
BCX 78-X
BCX 79
BCX 79-VII
BCX 79-VIII
BCX 79-IX
BCX 79-X
Q62702-C717
Q62702-C626
Q62702-C627
Q62702-C628
Q62702-C629
Q62702-C718
Q62702-C630
Q62702-C631
Q62702-C632
Q62702-C633
Pin Configuration
1 2 3
C B E
Package
1)
1)
For detailed information see chapter Package Outlines.
Semiconductor Group 1
5.91
Page 2
BCX 78
BCX 79
Maximum Ratings
Parameter Symbol Values Unit
BCX 78 BCX 79
Collector-emitter voltage V
Collector-base voltage VCB0
Emitter-base voltage V
Collector current IC mA
Peak collector current ICM
Peak base current I
Total power dissipation, T
C = 70 ˚C Ptot mW
Junction temperature Tj ˚C
Storage temperature range T
CE0 V
32 45
32 45
EB0
5
100
200
BM 200
500
150
stg
– 65 … + 150
Thermal Resistance
Junction - ambient Rth JA ≤ 250 K/W
Junction - case
1)
Rth JC ≤ 160
1)
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group 2
Page 3
Electrical Characteristics
I
I
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
DC characteristics
BCX 78
BCX 79
UnitValuesParameter Symbol
min. typ. max.
(BR)CE0
V
C = 2 mA BCX 78
BCX 79
Collector-base breakdown voltage
C = 10 µA BCX 78
(BR)CB0
V
BCX 79
Emitter-base breakdown voltage
E = 1 µA
Collector cutoff current
VCB = 32 V BCX 78
CB = 45 V BCX 79
V
CB = 32 V, TA = 150 ˚C BCX 78
V
CB = 45 V, TA = 150 ˚C BCX 79
V
CB = 32 V, VBE = 0.2 V,TA = 100 ˚C
V
CB = 45 V, VBE = 0.2 V,TA = 100 ˚C
V
EB = 4 V
V
DC current gain
C = 10 µA, VCE = 5 V
V
(BR)EB0 5––
I
CB0
CE0
I
I
EB0 ––20
FE
h
BCX 78 VII, BCX 79 VII
BCX 78 VIII, BCX 79 VIII
BCX 78 IX, BCX 79 IX
BCX 78 X, BCX 79 X
C = 2 mA, VCE = 5 V
BCX 78 VII, BCX 79 VII
BCX 78 VIII, BCX 79 VIII
BCX 78 IX, BCX 79 IX
BCX 78 X, BCX 79 X
C = 100 mA, VCE = 1 V
1)
BCX 78 VII, BCX 79 VII
BCX 78 VIII, BCX 79 VIII
BCX 78 IX, BCX 79 IX
BCX 78 X, BCX 79 X
32
45
32
45
–
–
–
–
–
–
20
30
40
100
120
180
250
380
40
45
60
60
–
–
–
–
–
–
–
–
–
–
140
200
270
340
170
250
350
500
–
–
–
–
–
–
–
–
20
20
10
10
20
20
–
–
–
–
220
310
460
630
–
–
–
–
VCollector-emitter breakdown voltage
nA
nA
µA
µA
µACollector cutoff current
nAEmitter cutoff current
–
1)
Pulse test: t ≤ 300 µs, D ≤ 2%.
Semiconductor Group 3
Page 4
Electrical Characteristics
I
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
DC characteristics
BCX 78
BCX 79
UnitValuesParameter Symbol
min. typ. max.
Collector-emitter saturation voltage
C = 100 mA, IB = 2.5 mA
Base-emitter saturation voltage
C = 100 mA, IB = 2.5 mA
1)
Base-emitter voltage
C = 10 µA, VCE = 5 V
C = 2 mA, VCE = 5 V
C = 100 mA, VCE = 1 V
1)
1)
VCEsat – – 0.6
V
VBEsat – – 1.0
VBE(on)
–
0.55
–
0.52
0.65
0.93
–
0.75
–
1)
Pulse test: t ≤ 300 µs, D ≤ 2%.
Semiconductor Group 4
Page 5
Electrical Characteristics
I
I
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
BCX 78
BCX 79
Parameter Symbol
UnitValues
min. typ. max.
AC characteristics
f
T – 250 –
C = 20 mA, VCE = 5 V, f = 100 MHz
C
obo –3–
CB = 10 V, f = 1 MHz
V
Input capacitance
EB = 0.5 V, f = 1 MHz
V
C = 2 mA, VCE = 5 V, f = 1 kHz
BCX 78 VII, BCX 79 VII
BCX 78 VIII, BCX 79 VIII
BCX 78 IX, BCX 79 IX
BCX 78 X, BCX 79 X
Open-circuit reverse voltage transfer ratio
C = 2 mA, VCE = 5 V, f = 1 kHz
BCX 78 VII, BCX 79 VII
BCX 78 VIII, BCX 79 VIII
BCX 78 IX, BCX 79 IX
BCX 78 X, BCX 79 X
C
ibo –10–
11e
h
–
–
–
–
12e
h
–
–
–
–
2.7
3.6
4.5
7.5
1.5
2
2
3
–
–
–
–
–
–
–
–
MHzTransition frequency
pFOutput capacitance
kΩShort-circuit input impedance
10
–4
21e
h
C = 2 mA, VCE = 5 V, f = 1 kHz
BCX 78 VII, BCX 79 VII
BCX 78 VIII, BCX 79 VIII
BCX 78 IX, BCX 79 IX
BCX 78 X, BCX 79 X
22e
h
C = 2 mA, VCE = 5 V, f = 1 kHz
BCX 78 VII, BCX 79 VII
BCX 78 VIII, BCX 79 VIII
BCX 78 IX, BCX 79 IX
BCX 78 X, BCX 79 X
–
–
–
–
–
–
–
–
200
260
330
520
18
24
30
50
–
–
–
–
–
–
–
–
F –2–
C = 0.2 mA, VCE = 5 V, RS = 2 kΩ
f = 1 kHz,
∆f = 200 Hz
–Short-circuit forward current transfer ratio
µSOpen-circuit output admittance
dBNoise figure
Semiconductor Group 5
Page 6
BCX 78
BCX 79
Total power dissipation Ptot = f (TA; TC)
Collector current IC = f (VBE)
CE = 5 V
V
Permissible pulse load R
thJA = f (tp)
Collector cutoff current I
CB0 = f (TA)
for max. permissible reverse voltage
Semiconductor Group 6
Page 7
BCX 78
BCX 79
DC current gain hFE = f (IC)
CE = 5 V (common emitter configuration)
V
Transition frequency fT = f (IC)
CE = 5 V
V
Collector-emitter saturation voltage
C = f (VCEsat)
I
FE = 20
h
Base-emitter saturation voltage
C = f (VBEsat)
I
FE = 20
h
Semiconductor Group 7
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