Page 1
Semiconductor Group 1
NPN Silicon AF Transistors BCX 58
BCX 59
5.91
Maximum Ratings
Type Ordering CodeMarking
Package
1)
Pin Configuration
BCX 58 VIII
BCX 58 IX
BCX 58 X
BCX 59 VIII
BCX 59 IX
BCX 59 X
Q62702-C619
Q62702-C620
Q62702-C621
Q62702-C623
Q62702-C624
Q62702-C625
– TO-92
C B E
1 2 3
1)
For detailed information see chapter Package Outlines.
2)
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Parameter Symbol Values Unit
Collector-emitter voltage V
CE0 V
Peak collector current ICM
Collector current IC mA
Junction temperature Tj ˚C
Total power dissipation, T
C = 70 ˚C Ptot mW
Storage temperature range T
stg
Collector-base voltage VCB0
Thermal Resistance
Junction - ambient Rth JA ≤ 250 K/W
100
200
500
150
– 65 … + 150
Emitter-base voltage V
EB0
32 45
32 45
BCX 58 BCX 59
Peak base current I
BM 200
7
Junction - case
2)
Rth JC ≤ 160
● High current gain
● Low collector-emitter saturation voltage
● Complementary types: BCX 78, BCX 79 (PNP)
1
2
3
Page 2
Semiconductor Group 2
BCX 58
BCX 59
Electrical Characteristics
at T
A = 25 ˚C, unless otherwise specified.
VCollector-emitter breakdown voltage
I
C = 2 mA BCX 58
BCX 59
V
(BR)CE0
32
45
–
–
–
–
nA
nA
µA
µA
Collector cutoff current
VCB = 32 V BCX 58
V
CB = 45 V BCX 59
V
CB = 32 V, TA = 150 ˚C BCX 58
V
CB = 45 V, TA = 150 ˚C BCX 59
I
CB0
–
–
–
–
–
–
–
–
20
20
10
10
UnitValuesParameter Symbol
min. typ. max.
DC characteristics
Collector-base breakdown voltage
I
C = 10 µA BCX 58
BCX 59
V
(BR)CB0
32
45
–
–
–
–
Emitter-base breakdown voltage
I
E = 1 µA
V
(BR)EB0 7––
–
DC current gain
I
C = 10 µA, VCE = 5 V
BCX 58 VII, BCX 59 VII
BCX 58 VIII, BCX 59 VIII
BCX 58 IX, BCX 59 IX
BCX 58 X, BCX 59 X
I
C = 2 mA, VCE = 5 V
BCX 58 VII, BCX 59 VII
BCX 58 VIII, BCX 59 VIII
BCX 58 IX, BCX 59 IX
BCX 58 X, BCX 59 X
I
C = 100 mA, VCE = 1 V
1)
BCX 58 VII, BCX 59 VII
BCX 58 VIII, BCX 59 VIII
BCX 58 IX, BCX 59 IX
BCX 58 X, BCX 59 X
h
FE
20
20
40
100
120
180
250
380
40
45
60
60
78
145
220
300
170
250
350
500
–
–
–
–
–
–
–
–
220
310
460
630
–
–
–
–
nAEmitter cutoff current
V
EB = 4 V
I
EB0 ––20
µACollector cutoff current
V
CE = 32 V, VBE = 0.2 V,TA = 100 ˚C
V
CE = 45 V, VBE = 0.2 V,TA = 100 ˚C
I
CEX
–
–
–
–
20
20
1)
Pulse test: t ≤ 300 µs, D ≤ 2%.
Page 3
Semiconductor Group 3
BCX 58
BCX 59
Electrical Characteristics
at T
A = 25 ˚C, unless otherwise specified.
Base-emitter saturation voltage
1)
I
C = 100 mA, IB = 2.5 mA
VBEsat – – 1.0
V
Collector-emitter saturation voltage
1)
I
C = 100 mA, IB = 2.5 mA
VCEsat – – 0.5
DC characteristics
UnitValuesParameter Symbol
min. typ. max.
Base-emitter voltage
I
C = 10 µA, VCE = 5 V
I
C = 2 mA, VCE = 5 V
I
C = 100 mA, VCE = 1 V
1)
VBE(on)
–
0.55
–
0.52
0.65
0.83
–
0.75
–
1)
Pulse test: t ≤ 300 µs, D ≤ 2%.
Page 4
Semiconductor Group 4
BCX 58
BCX 59
Electrical Characteristics
at T
A = 25 ˚C, unless otherwise specified.
MHzTransition frequency
I
C = 20 mA, VCE = 5 V, f = 100 MHz
f
T – 200 –
AC characteristics
pFOutput capacitance
V
CB = 10 V, f = 1 MHz
C
obo –3–
Input capacitance
V
CB = 0.5 V, f = 1 MHz
C
ibo –8–
kΩShort-circuit input impedance
I
C = 2 mA, VCE = 5 V, f = 1 kHz
BCX 58 VII, BCX 59 VII
BCX 58 VIII, BCX 59 VIII
BCX 58 IX, BCX 59 IX
BCX 58 X, BCX 59 X
h
11e
–
–
–
–
2.7
3.6
4.5
7.5
–
–
–
–
10
–4
Open-circuit reverse voltage transfer ratio
I
C = 2 mA, VCE = 5 V, f = 1 kHz
BCX 58 VII, BCX 59 VII
BCX 58 VIII, BCX 59 VIII
BCX 58 IX, BCX 59 IX
BCX 58 X, BCX 59 X
h
12e
–
–
–
–
1.5
2.0
2.0
3.0
–
–
–
–
UnitValues
Parameter Symbol
min. typ. max.
dBNoise figure
I
C = 0.2 mA, VCE = 5 V, RS = 2 kΩ
f = 1 kHz,
∆f = 200 Hz
F –2–
–Short-circuit forward current transfer ratio
I
C = 2 mA, VCE = 5 V, f = 1 kHz
BCX 58 VII, BCX 59 VII
BCX 58 VIII, BCX 59 VIII
BCX 58 IX, BCX 59 IX
BCX 58 X, BCX 59 X
h
21e
–
–
–
–
200
260
330
520
–
–
–
–
µSOpen-circuit output admittance
I
C = 2 mA, VCE = 5 V, f = 1 kHz
BCX 58 VII, BCX 59 VII
BCX 58 VIII, BCX 59 VIII
BCX 58 IX, BCX 59 IX
BCX 58 X, BCX 59 X
h
22e
–
–
–
–
18
24
30
50
–
–
–
–
Page 5
Semiconductor Group 5
BCX 58
BCX 59
Total power dissipation Ptot = f (TA; TC)
Permissible pulse load R
thJA = f (tp)
Collector current IC = f (VBE)
V
CE = 5 V (common emitter configuration)
DC current gain h
FE = f (IC)
V
CE = 5 V (common emitter configuration)
Page 6
Semiconductor Group 6
BCX 58
BCX 59
Collector cutoff current ICB0 = f (TA)
V
CB =45V
Base-emitter saturation voltage
I
C = f (VBEsat)
h
FE = 20
Transition frequency fT = f (IC)
V
CE = 5 V, f = 100 MHz
Collector-emitter saturation voltage
I
C = f (VCEsat)
h
FE = 20
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