Datasheet BCW69LT1, BCW70LT1 Datasheet (LRC)

General Purpose Transistors

PNP Silicon

LESHAN RADIO COMPANY, LTD.

BCW69LT1

3 COLLECTOR

1 BASE

2 EMITTER

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V Emitter–Base Voltage V Collector Current — Continuous I

CEO

EBO

C

– 45 Vdc

– 5.0 Vdc

– 100 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient R T otal Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient R Junction and Storage T emperature TJ , T

P

D

225 mW

1.8 mW/°C

θJA

P

D

556 °C/W

300 mW

2.4 mW/°C

θJA

stg

417 °C/W

–55 to +150 °C

BCW70LT1

3

1

2

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

DEVICE MARKING

BCW69LT1 = H1; BCW70LT1 = H2,

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted.)

A

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0 ) V Collector–Emitter Breakdown Voltage (IC = –100 µAdc, V

= 0 ) V

EB

Emitter–Base Breakdown Voltage (I E= –10 µAdc, I C = 0) V Collector Cutoff Current I

(BR)CEO

(BR)CES

(BR)EBO

CEO

(VCE = –20 Vdc, I E = 0 ) — – 100 nAdc (VCE = –20 Vdc, I E = 0 , TA = 100°C) — – 10 µAdc

1. FR– 5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

– 45 — Vdc – 50 — Vdc

– 5.0 — Vdc

M13–1/6

LESHAN RADIO COMPANY, LTD.

BCW69LT1 BCW70LT1

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted) (Continued)

A

Characteristic Symbol Min Max Unit

ON CHARACTERISTICS

DC Current Gain h ( IC= –2.0 mAdc, VCE = –5.0 Vdc ) BCW69LT1 120 260

BCW70LT1 215 500 Collector–Emitter Saturation Voltage ( IC = – 10 mAdc, IB = –0.5 mAdc ) Base–Emitter On Voltage ( IC = – 2.0 mAdc, V CE = – 5.0Vdc )

V

FE

CE(sat)

BE(on)

— – 0.3 Vdc

– 0.6 – 0.75 Vdc

SMALL–SIGNAL CHARACTERISTICS

Output Capacitance ( I E= 0 V CB = –10Vdc, f = 1.0 MHz) Noise Figure (V

= – 5.0 Vdc, I C = – 0.2 mAdc, R S = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)

CE

C

obo

N

F

— 7.0 pF

—10dB

—

M13–2/6

LESHAN RADIO COMPANY, LTD.

TYPICAL NOISE CHARACTERISTICS

(V CE = – 5.0 Vdc, T A = 25°C)

BCW69LT1 BCW70LT1

10

BANDWIDTH = 1.0 Hz

7.0

IC=10 µA

5.0

30µA

3.0

1.0mA

2.0

, NOISE VOLTAGE (nV)

n

e

1.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k

100µA

300µA

f, FREQUENCY (Hz)

Figure 1. Noise V oltage

1.0M

500k 200k

100k

50k 20k

0.5 dB

10k

5.0k

2.0k

1.0k 500

, SOURCE RESISTANCE ( Ω )

200

S

R

100

10 20 30 50 70 100 200 300 500 700 1.0K

1.0 dB

I C , COLLECTOR CURRENT (µA)

BANDWIDTH = 1.0 Hz

2.0dB

Figure 3. Narrow Band, 100 Hz

10.0

~

R S 0

~

7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.3

0.2

, NOISE CURRENT (pA)

n

I

0.1 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k

NOISE FIGURE CONTOURS

(V CE = – 5.0 Vdc, T A = 25°C)

1.0M 500k

200k 100k

50k 20k 10k

5.0k

2.0k

1.0k

3.0 dB

5.0 dB

500

, SOURCE RESISTANCE ( Ω )

200

S

100

R

10 20 30 50 70 100 200 300 500 700 1.0K

BANDWIDTH = 1.0 Hz

~

R

~

S

IC=1.0mA

300µA

100µA

30µA

10µA

f, FREQUENCY (Hz)

Figure 2. Noise Current

BANDWIDTH = 1.0 Hz

0.5 dB

1.0dB

2.0 dB

3.0 dB

5.0 dB

I C , COLLECTOR CURRENT (µA)

Figure 4. Narrow Band, 1.0 kHz

8

1.0M 500k

200k 100k

50k 20k 10k

5.0k

2.0k

1.0k 500

, SOURCE RESISTANCE ( Ω )

S

200

R

100

10 20 30 50 70 100 200 300 500 700 1.0K

0.5dB

10 Hz to 15.7KHz

I C , COLLECTOR CURRENT (µA)

Figure 5. Wideband

1.0dB

3.0 dB

2.0dB

5.0 dB

Noise Figure is Defined as:

2

NF = 20 log

e

2 + 4KTRS + I

n

( –––––––––––––––)

10

4KTR

2

R

n

S

1/ 2

S

e n= Noise Voltage of the Transistor referred to the input. (Figure 3)

= Noise Current of the Transistor referred to the input. (Figure 4)

I

n

K = Boltzman’s Constant (1.38 x 10

–23

j/°K) T = Temperature of the Source Resistance (°K) R s= Source Resistance ( Ω )

M13–3/6

LESHAN RADIO COMPANY, LTD.

BCW69LT1 BCW70LT1

TYPICAL ST ATIC CHARACTERISTICS

1.0

0.8

50 mA

0.6

0.4

0.2

0

, COLLECTOR– EMITTER VOL T AGE (VOL TS)

CE

0.002 0.0050.010.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20

V

I C= 1.0 mA

100 mA 10 mA

I B , BASE CURRENT (mA)

Figure 6. Collector Saturation Region

1.4

T J=25°C

1.2

1.0

0.8

V

@ I C /I B = 10

BE(sat)

0.6

0.4

V

@ V CE= 1.0 V

BE(on)

V, VOLTAGE (VOLTS)

0.2

V

@ I C /I B = 10

CE(sat)

0

0.1 0.2 0.5 1.0 2.0 5.0 10 2 0 50 100

I C , COLLECTOR CURRENT (mA)

Figure 10. “On” Voltages

T

= 25°C

J

100

T A = 25°C PULSE WIDTH =300 µs DUTY CYCLE<2.0%

80

350µA

I B= 400 mA

300µA

60

40

20

, COLLECTOR CURRENT (mA)

C

I

0

0 5.0 10 15 20 25 30 35 40

200 µA

100 µA

V CE , COLLECTOR–EMITTER VOL TAGE (VOLTS)

Figure 7. Collector Characteristics

1.6

*APPLIES for I C / I B<

0.8

∗ θ VC for V

0

CE(sat)

h

/ 2

FE

25°C to 125°C

–55°C to 25°C

–0.8

25°C to 125°C

–1.6

θ VB for V

–2.4

, TEMPERATURE COEFFICIENTS (mV/°C)

V

0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

θ

BE

–55°C to 25°C

I C , COLLECTOR CURRENT (mA)

Figure 11. Temperature Coefficients

250 µA

150 µA

50µA

M13–4/6

LESHAN RADIO COMPANY, LTD.

TYPICAL DYNAMIC CHARACTERISTICS

BCW69LT1 BCW70LT1

500 300 200

100

70 50

30

t, TIME (ns)

20

10

7.0

5.0

1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

td @ V

BE(off)

= 0.5 V

t

r

V CC= 3.0 V IC /I B= 10 T J= 25°C

I C , COLLECTOR CURRENT (mA)

Figure 10. Turn–On Time

500

T J = 25°C

300

200

V CE=20 V

5.0 V

1000

700 500

300 200

100

70

t, TIME (ns)

50

30 20

10

–1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100

t

s

t

f

I C , COLLECTOR CURRENT (mA)

Figure 11. Turn–Off Time

10.0

7.0

5.0

3.0

C

ib

VCC= –3.0 V IC /I B= 10 IB1=I

B2

T J= 25°C

100

70

50

, CURRENT– GAIN — BANDWIDTH PRODUCT (MHz)

T

f

0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50

I C , COLLECTOR CURRENT (mA)

Figure 12. Current–Gain — Bandwidth Product

1.0

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.01

0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k

r( t) TRANSIENT THERMAL RESISTANCE(NORMALIZED)

D = 0.5

0.2

0.1

0.05

0.02

0.01 SINGLE PULSE

2.0

C, CAPACITANCE (pF)

1.0

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50

V R , REVERSE VOLTAGE (VOLTS)

Figure 13. Capacitance

P

(pk)

FIGURE 16

t

1

t

DUTY CYCLE, D = t D CURVES APPL Y FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 (SEE AN–569) Z

= r(t) • R

2

θJA(t)

T

J(pk)

– T A = P

θJA

(pk) Z θJA(t)

/ t

1

t, TIME (ms)

Figure 14. Thermal Response

C

ob

2

M13–5/6

4

10

V

= 30 V

CC

3

10

I

2

10

1

10

CEO

I

CBO

AND

I

@ V

0

10

, COLLECTOR CURRENT (nA)

C

–1

10

I

–2

10

–4 –2 0 +20 +40 +60 +80 +100 +120 +140 +160

CEX

BE(off)

= 3.0 V

T J , JUNCTION TEMPERATURE (°C)

Figure 15. T ypical Collector Leakage Current

LESHAN RADIO COMPANY, LTD.

BCW69LT1 BCW70LT1

DESIGN NOTE: USE OF THERMAL RESPONSE DA TA

A train of periodical power pulses can be represented by the model as shown in Figure 16. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 14 was calculated for various duty cycles. T o find Z steady state value R Example: Dissipating 2.0 watts peak under the following conditions: t 1 = 1.0 ms, t 2 = 5.0 ms. (D = 0.2) Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore ∆T = r(t) x P For more information, see AN–569.

, multiply the value obtained from Figure 14 by the

θJA(t)

(pk)

.

θJA

x R

= 0.22 x 2.0 x 200 = 88°C.

θJA

M13–6/6