Page 1
BCR562
PNP Silicon Digital Transistor
• Built in bias resistor (R1= 4.7 kΩ, R2= 4.7 kΩ)
• Pb-free (RoHS compliant) package
1)
• Qualified according AEC Q101
C
3
R
1
R
2
21
EB
EHA07183
Type Marking Pin Configuration Package
3
2
1
BCR562 XUs
1=B 2=E 3=C
Maximum Ratings
Parameter
Symbol Value Unit
Collector-emitter voltage V
Collector-base voltage V
Input forward voltage V
Input reverse voltage V
Collector current I
Total power dissipation-
≤ 79 °C
T
S
P
Junction temperature T
Storage temperature T
Thermal Resistance
Parameter
Junction - soldering point
1
Pb-containing package may be available upon special request
2
For calculation of R
thJA
2)
please refer to Application Note Thermal Resistance
Symbol Value Unit
R
CEO
CBO
i(fwd)
i(rev)
C
tot
j
stg
thJS
SOT23
50 V
50
30
10
500 mA
330 mW
150 °C
-65 ... 150
≤ 215
K/W
1
2007-07-24
Page 2
BCR562
Electrical Characteristics at T
= 25°C, unless otherwise specified
Parameter
DC Characteristics
Collector-emitter breakdown voltage
= 100 µA, IB = 0
I
C
Collector-base breakdown voltage
= 10 µA, IE = 0
I
C
Collector-base cutoff current
= 50 V, IE = 0
V
CB
Emitter-base cutoff current
= 10 V, IC = 0
V
EB
DC current gain-
= 50 mA, VCE = 5 V
I
C
Collector-emitter saturation voltage1)
= 50 mA, IB = 2.5 mA
I
C
Symbol Values Unit
min. typ. max.
V
(BR)CEO
V
(BR)CBO
I
CBO
I
EBO
h
FE
V
CEsat
50 - -
V
50 - -
- - 100 nA
- - 1.61 mA
60 - - -
- - 0.3 V
Input off voltage
= 100 µA, VCE = 5 V
I
C
Input on voltage
= 10 mA, VCE = 0.3 V
I
C
Input resistor R
V
V
i(off)
i(on)
1
Resistor ratio R1/R
AC Characteristics
Transition frequency
= 50 mA, VCE = 5 V, f = 100 MHz
I
C
1
Pulse test: t < 300µs; D < 2%
f
T
0.6 - 1.5
1 - 2.2
3.2 4.7 6.2 kΩ
2
0.9 1 1.1 -
- 150 - MHz
2
2007-07-24
Page 3
BCR562
DC current gain h
= 5 V (common emitter configuration)
V
CE
3
10
FE
= ƒ(I
)
C
-40 °C
-25 °C
25 °C
85 °C
125 °C
-4
10
-3
10
-2
10
h
FE
10
10
10
10
2
1
0
-1
10
Collector-emitter saturation voltage
CEsat
V
0.8
0.7
CEsat
V
0.6
0.5
0.4
0.3
0.2
0.1
= ƒ(I
1
0
10
V
-1
I
0
A
10
C
), hFE = 20
C
-3
-40 °C
-25 °C
25 °C
85 °C
125 °C
-2
10
10
-1
A
I
0
10
C
Input on Voltage Vi
= 0.3V (common emitter configuration)
V
CE
2
10
V
-40 °C
-25 °C
(on)
= ƒ(I
)
C
25 °C
85 °C
125 °C
1
10
i(on)
V
0
10
-1
10
10
-4
10
-3
10
-2
10
Input off voltage V
= 5V (common emitter configuration)
V
CE
1
10
i(off)
= ƒ(I
)
C
-40 °C
-25 °C
V
25 °C
85 °C
125 °C
i(off)
V
0
10
-1
-1
I
0
A
10
C
10
10
-5
10
-4
10
-3
A
I
-2
10
C
3
2007-07-24
Page 4
BCR562
Total power dissipation P
400
mW
300
tot
250
P
200
150
100
50
0
0 20 40 60 80 100 120
= ƒ(T
tot
)
S
Permissible Pulse Load R
3
10
K/W
2
10
thJS
R
1
10
thJS
= ƒ(t
)
p
0.5
0.2
0.1
0.05
10
0
0.02
0.01
0.005
D = 0
-1
10
°C
150
T
S
10
-6
10
-5
10
-4
10
-3
10
-2
s
t
0
10
p
Permissible Pulse Load
P
totmax/PtotDC
4
10
-
totDC
3
10
/P
totmax
P
2
10
1
10
0
10
-6
10
= ƒ(t
-5
10
10
)
p
-4
10
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-3
10
-2
s
t
0
10
p
4
2007-07-24
Page 5
Package Outline
Foot Print
Package SOT23
±0.1
2.9
12
1)
+0.1
0.4
-0.05
1.9
0.25MBC
1) Lead width can be 0.6 max. in dambar area
B
3
C
0.95
0.8
0.15 MIN.
±0.15
2.4
0.2
±0.1
1
0.1 MAX.
10˚ MAX.
0.08...0.15
0...8˚
M
A
±0.1
1.3
10˚ MAX.
A
BCR562
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
Pin 1
0.8 1.2
EH
4
0.9
s
0.9 0.91.3
Manufacturer
2005, June
Date code (YM)
BCW66
Type code
0.2
Pin 1
3.15
2.13
5
2.65
8
1.15
2007-07-24
Page 6
BCR562
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
6
2007-07-24
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