Datasheet BCR553E6327 Specification

Page 1
PNP Silicon Digital Transistor
g
BCR553
Built in bias resistor (R
Pb-free (RoHS compliant) package
= 2.2 kΩ, R2= 2.2 k)
1
3
Qualified according AEC Q101
C 3
R
1
R
2
21 EB
EHA07183
Type Marking Pin Configuration Package
BCR553 XBs
1=B 2=E 3=C
SOT23
Maximum Ratings
Parameter
Collector-emitter voltage V
Collector-base voltage V
Input forward voltage V
Symbol Value Unit
CEO
CBO
i(fwd)
50 V
50
20
2
1
Input reverse voltage V
Collector current I
Total power dissipation-
T
79 °C
S
P
Junction temperature T
Storage temperature T
Thermal Resistance Parameter
Junction - soldering point
1
For calculation of R
please refer to Application Note AN077 (Thermal Resistance Calculation)
thJA
1)
Symbol Value Unit
R
i(rev)
C
tot
j
st
thJS
10
500 mA
330 mW
150 °C
-65 ... 150
215
K/W
1
2011-07-28
Page 2
BCR553
A
Electrical Characteristics at T
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
= 100 µA, IB = 0
C
Collector-base breakdown voltage
I
= 10 µA, IE = 0
C
Collector-base cutoff current
V
= 50 V, IE = 0
CB
Emitter-base cutoff current
V
= 10 V, IC = 0
EB
DC current gain-
I
= 50 mA, VCE = 5 V
C
Collector-emitter saturation voltage1)
I
= 50 mA, IB = 2.5 mA
C
V
(BR)CEO
V
(BR)CBO
I
CBO
I
EBO
h
FE
V
CEsat
50 - -
V
50 - -
- - 100 nA
- - 3.5 mA
40 - - -
- - 0.3 V
Input off voltage
I
= 100 µA, VCE = 5 V
C
Input on voltage
I
= 10 mA, VCE = 0.3 V
C
Input resistor R
V
V
i(off)
i(on)
1
Resistor ratio R1/R
AC Characteristics
Transition frequency
= 50 mA, VCE = 5 V, f = 100 MHz
I
C
1
Pulse test: t < 300µs; D < 2%
f
T
0.6 - 1.5
1 - 1.8
1.5 2.2 2.9 k
2
0.9 1 1.1 -
- 150 - MHz
2
2011-07-28
Page 3
BCR553
DC current gain h
V
= 5 V (common emitter configuration)
CE
3
10
= ƒ(IC)
FE
-40 °C
-25 °C 25 °C
FE
h
10
10
10
2
1
0
10
85 °C 125 °C
-4
10
-3
10
-2
10
Collector-emitter saturation voltage
V
-1
I
0
A
10
C
CEsat
0.5
V
0.4
0.35
CEsat
V
0.3
0.25
0.2
0.15
0.1
0.05
= ƒ(IC), I
-40 °C
-25 °C 25 °C 85 °C 125 °C
0
-2
10
C/IB
= 20
10
-1
A
I
0
10
C
Input on Voltage Vi
V
= 0.3V (common emitter configuration)
CE
2
10
V
(on)
= ƒ(IC)
-40 °C
-25 °C 25 °C
1
i(on)
V
10
10
10
-1
0
10
-4
85 °C 125 °C
10
-3
10
-2
10
Input off voltage V
V
= 5V (common emitter configuration)
CE
1
10
i(off)
= ƒ(IC)
-40 °C
-25 °C
V
25 °C 85 °C 125 °C
i(off)
V
0
10
-1
10
-1
I
0
A
10
C
10
-5
10
-4
10
-3
A
I
-2
10
C
3
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Page 4
BCR553
Total power dissipation P
400
mW
300
tot
250
P
200
150
100
50
0
0 20 40 60 80 100 120
= ƒ(TS)
tot
°C
T
Permissible Pulse Load R
3
10
K/W
2
10
thJS
R
1
10
thJS
= ƒ(tp)
0.5
0.2
0.1
0.05
10
0
0.02
0.01
0.005 D = 0
-1
10
150
10
-6
S
10
-5
10
-4
10
-3
10
-2
s
t
0
10
p
Permissible Pulse Load
P
totmax/PtotDC
4
10
-
totDC
3
10
/P
totmax
P
2
10
1
10
0
10
10
-6
= ƒ(tp)
-5
10
10
-4
10
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-3
10
-2
s
t
0
10
p
4
2011-07-28
Page 5
Package Outline
Foot Print
Package SOT23
±0.1
2.9
12
1)
+0.1
0.4
-0.05
1.9
0.25MBC
1) Lead width can be 0.6 max. in dambar area
B
3
C
0.95
0.8
0.15 MIN.
±0.15
2.4
0.2
±0.1
1
0.1 MAX.
10˚ MAX.
0.08...0.15
0...8˚
M
A
±0.1
1.3
10˚ MAX.
A
BCR553
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel
Pin 1
0.8 1.2
EH
4
0.9
s
0.9 0.91.3
Manufacturer
2005, June
Date code (YM)
BCW66
Type code
0.2
Pin 1
3.15
2.13
5
2.65 8
1.15
2011-07-28
Page 6
BCR553
Edition 2009-11-16
Published by Infineon Technologies AG 81726 Munich, Germany
2009 Infineon Technologies AG All Rights Reserved.
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Information
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>).
6
2011-07-28
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