
PNP Silicon Digital Transistor
BCR553
• Built in bias resistor (R
• Pb-free (RoHS compliant) package
= 2.2 kΩ, R2= 2.2 kΩ)
1
3
• Qualified according AEC Q101
C
3
R
1
R
2
21
EB
EHA07183
Type Marking Pin Configuration Package
BCR553 XBs
1=B 2=E 3=C
SOT23
Maximum Ratings
Parameter
Collector-emitter voltage V
Collector-base voltage V
Input forward voltage V
Symbol Value Unit
CEO
CBO
i(fwd)
50 V
50
20
2
1
Input reverse voltage V
Collector current I
Total power dissipation-
T
≤ 79 °C
S
P
Junction temperature T
Storage temperature T
Thermal Resistance
Parameter
Junction - soldering point
1
For calculation of R
please refer to Application Note AN077 (Thermal Resistance Calculation)
thJA
1)
Symbol Value Unit
R
i(rev)
C
tot
j
st
thJS
10
500 mA
330 mW
150 °C
-65 ... 150
≤ 215
K/W
1
2011-07-28

BCR553
Electrical Characteristics at T
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
= 100 µA, IB = 0
C
Collector-base breakdown voltage
I
= 10 µA, IE = 0
C
Collector-base cutoff current
V
= 50 V, IE = 0
CB
Emitter-base cutoff current
V
= 10 V, IC = 0
EB
DC current gain-
I
= 50 mA, VCE = 5 V
C
Collector-emitter saturation voltage1)
I
= 50 mA, IB = 2.5 mA
C
V
(BR)CEO
V
(BR)CBO
I
CBO
I
EBO
h
FE
V
CEsat
50 - -
V
50 - -
- - 100 nA
- - 3.5 mA
40 - - -
- - 0.3 V
Input off voltage
I
= 100 µA, VCE = 5 V
C
Input on voltage
I
= 10 mA, VCE = 0.3 V
C
Input resistor R
V
V
i(off)
i(on)
1
Resistor ratio R1/R
AC Characteristics
Transition frequency
= 50 mA, VCE = 5 V, f = 100 MHz
I
C
1
Pulse test: t < 300µs; D < 2%
f
T
0.6 - 1.5
1 - 1.8
1.5 2.2 2.9 kΩ
2
0.9 1 1.1 -
- 150 - MHz
2
2011-07-28

BCR553
DC current gain h
V
= 5 V (common emitter configuration)
CE
3
10
= ƒ(IC)
FE
-40 °C
-25 °C
25 °C
FE
h
10
10
10
2
1
0
10
85 °C
125 °C
-4
10
-3
10
-2
10
Collector-emitter saturation voltage
V
-1
I
0
A
10
C
CEsat
0.5
V
0.4
0.35
CEsat
V
0.3
0.25
0.2
0.15
0.1
0.05
= ƒ(IC), I
-40 °C
-25 °C
25 °C
85 °C
125 °C
0
-2
10
C/IB
= 20
10
-1
A
I
0
10
C
Input on Voltage Vi
V
= 0.3V (common emitter configuration)
CE
2
10
V
(on)
= ƒ(IC)
-40 °C
-25 °C
25 °C
1
i(on)
V
10
10
10
-1
0
10
-4
85 °C
125 °C
10
-3
10
-2
10
Input off voltage V
V
= 5V (common emitter configuration)
CE
1
10
i(off)
= ƒ(IC)
-40 °C
-25 °C
V
25 °C
85 °C
125 °C
i(off)
V
0
10
-1
10
-1
I
0
A
10
C
10
-5
10
-4
10
-3
A
I
-2
10
C
3
2011-07-28

BCR553
Total power dissipation P
400
mW
300
tot
250
P
200
150
100
50
0
0 20 40 60 80 100 120
= ƒ(TS)
tot
°C
T
Permissible Pulse Load R
3
10
K/W
2
10
thJS
R
1
10
thJS
= ƒ(tp)
0.5
0.2
0.1
0.05
10
0
0.02
0.01
0.005
D = 0
-1
10
150
10
-6
S
10
-5
10
-4
10
-3
10
-2
s
t
0
10
p
Permissible Pulse Load
P
totmax/PtotDC
4
10
-
totDC
3
10
/P
totmax
P
2
10
1
10
0
10
10
-6
= ƒ(tp)
-5
10
10
-4
10
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-3
10
-2
s
t
0
10
p
4
2011-07-28

Package Outline
Foot Print
Package SOT23
±0.1
2.9
12
1)
+0.1
0.4
-0.05
1.9
0.25MBC
1) Lead width can be 0.6 max. in dambar area
B
3
C
0.95
0.8
0.15 MIN.
±0.15
2.4
0.2
±0.1
1
0.1 MAX.
10˚ MAX.
0.08...0.15
0...8˚
M
A
±0.1
1.3
10˚ MAX.
A
BCR553
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
Pin 1
0.8 1.2
EH
4
0.9
s
0.9 0.91.3
Manufacturer
2005, June
Date code (YM)
BCW66
Type code
0.2
Pin 1
3.15
2.13
5
2.65
8
1.15
2011-07-28

BCR553
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
>).
6
2011-07-28