Datasheet BCR3AS-12L Datasheet (POWEREX)

Feb.1999

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR3AS

LOW POWER USE

NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

•IT (RMS) ........................................................................3A

•V

DRM ..............................................................400V/600V

•I

FGT !, IRGT !, IRGT # .........................15mA (10mA)

✽2

BCR3AS

APPLICATION

Hybrid IC, solid state relay, switching mode power supply, light dimmer, electric fan, electric blankets, control of household equipment such as washing machine, other general purpose control applications

Symbol

V

DRM

VDSM

Parameter

Repetitive peak off-state voltage

✽1

Non-repetitive peak off-state voltage

✽1

Voltage class

Unit

V V

MAXIMUM RATINGS

8 400 500

12 600 720

Symbol

I

T (RMS)

ITSM

I

2

t

PGM PG (AV) VGM IGM Tj Tstg

—

Parameter RMS on-state current Surge on-state current

I

2

t

for fusing

Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight

Conditions

Commercial frequency, sine full wave 360° conduction, T

c=108°C

60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state

current

Typical value

Unit

A A

A

2

s

W W

V A

°C °C

g

Ratings

3

30

3.7

3

0.3 6

0.3

–40 ~ +125 –40 ~ +125

0.26

✽1. Gate open.

6.5

5.0±0.2

2.3 2.3

0.9 MAX

1.0

5.5±0.2

2.3

10 MAX

0.5±0.1

0.5±0.2

0.8

1.5±0.2

1

.0 MAX

2

23

4

1

3

4

1

1 2 3 4

T

1

TERMINAL T2 TERMINAL GATE

TERMINAL

T2 TERMINAL

TYPE

NAME

VOLTAGE

CLASS

∗

2.3 MIN

∗

Measurement point of

case temperature

OUTLINE DRAWING

Dimensions

in mm

MP-3

Feb.1999

50 1234

10

2

7 5

3 2

10

1

7 5

3 2

10

0

7 5

3 2

10

–1

TC = 25°C

10023 5710123 5710

2

44

30

35

20

25

10

15

5

40

0

MAXIMUM ON-STATE CHARACTERISTICS

ON-STATE CURRENT (A)

ON-STATE VOLTAGE (V)

RATED SURGE ON-STATE CURRENT

SURGE ON-STATE CURRENT (A)

CONDUCTION TIME

(CYCLES AT 60Hz)

Symbol

I

DRM

VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c)

(dv/dt)c

Parameter

Repetitive peak off-state current On-state voltage

Gate trigger voltage

✽2

Gate trigger current

✽2

Gate non-trigger voltage Thermal resistance

Critical-rate of rise of off-state commutating voltage

Test conditions

T

j=125°C, VDRM applied

T

c=25°C, ITM=4.5A, Instantaneous measurement

T

j=25°C, VD=6V, RL=6Ω, RG=330Ω

T

j=25°C, VD=6V, RL=6Ω, RG=330Ω

T

j=125°C, VD=1/2VDRM

Junction to case

✽4

Unit

mA

V V V

V mA mA mA

V

°C/W

V/µs

Typ.

— — — — — — — — — —

—

!

@

#

!

@

#

✽2.High sensitivity (IGT≤10mA) is also available. ✽3.The critical-rate of rise of the off-state commutating voltage is shown in the table below. ✽4.Case temperature is measured on the T

2 terminal.

ELECTRICAL CHARACTERISTICS

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR3AS

LOW POWER USE

NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

Limits

Min.

— — — — — — — —

0.2 —

✽3

Max.

2.0

1.7

1.5

1.5 15

✽2

15

✽2

15

✽2

—

3.8

—

PERFORMANCE CURVES

Test conditions

Voltage

class

8

12

V

DRM

(V)

400

600

Commutating voltage and current waveforms

(inductive load)

(dv/dt) c

SUPPLY VOLTAGE TIME

TIME

MAIN CURRENT

MAIN VOLTAGE

(di/dt)c

V

D

(dv/dt)c

Min.

5

Unit

V/µs

1. Junction temperature T

j=125°C

2. Rate of decay of on-state commutating current (di/dt)

c=–1.5A/ms

3. Peak off-state voltage V

D=400V

Feb.1999

10

0

2310

0

5710123 5710223 5710

3

10

2

7 5

3 2

10

1

7 5

3 2

7 5

3 2

10

–1

VGD = 0.2V

PG(AV) = 0.3W

PGM = 3W

IGM =

0.5A

IFGT I, IRGT III IRGT I

2310

–1

5710023 5710123 5710

2

4.0

3.6

3.2

2.8

2.4

2.0

1.6

1.2

0.8

0.4 0

MAXIMUM ON-STATE POWER

DISSIPATION

ON-STATE POWER DISSIPATION (W)

RMS ON-STATE CURRENT (A)

ALLOWABLE CASE TEMPERATURE

VS. RMS ON-STATE CURRENT

CASE TEMPERATURE (°C)

RMS ON-STATE CURRENT (A)

MAXIMUM TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(JUNCTION TO CASE)

TRANSIENT THERMAL IMPEDANCE (°C/W)

CONDUCTION TIME

(CYCLES AT 60Hz)

GATE VOLTAGE (V)

GATE CURRENT (mA)

GATE TRIGGER CURRENT VS.

JUNCTION TEMPERATURE

JUNCTION TEMPERATURE (°C)

GATE TRIGGER VOLTAGE VS.

JUNCTION TEMPERATURE

JUNCTION TEMPERATURE (°C)

10

1

10

3

7 5

3 2

–60 –20 20

10

2

7 5

3 2

60 100 140

4

–40 0 40 80 120

TYPICAL EXAMPLE

10

1

10

3

7 5

3 2

–60 –20 20

10

2

7 5

3 2

60 100 140

4

–40 0 40 80 120

IFGT I, IRGT I

IRGT III

TYPICAL EXAMPLE

10

8

6

4

2

0

50

1234

360° CONDUCTION RESISTIVE, INDUCTIVE LOADS

160

120 100

60

20

0

4.00

0.5 1.5 2.5 3.5

40

80

140

1.0 2.0 3.0

CURVES APPLY REGARDLESS OF CONDUCTION ANGLE

360° CONDUCTION RESISTIVE, INDUCTIVE LOADS

GATE CHARACTERISTICS

100 (%)

GATE TRIGGER CURRENT (T

j

= t°C)

GATE TRIGGER CURRENT (T

j

= 25°C)

100 (%)

GATE TRIGGER VOLTAGE

(

T

j

= t°C

)

GATE TRIGGER VOLTAGE

(

T

j

= 25°C

)

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR3AS

LOW POWER USE

NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

Feb.1999

LACHING CURRENT VS.

JUNCTION TEMPERATURE

LACHING CURRENT (mA)

JUNCTION TEMPERATURE (°C)

ALLOWABLE AMBIENT TEMPERATURE

VS. RMS ON-STATE CURRENT

AMBIENT TEMPERATURE (°C)

RMS ON-STATE CURRENT (A)

REPETITIVE PEAK OFF-STATE

CURRENT VS. JUNCTION

TEMPERATURE

JUNCTION TEMPERATURE (°C)

BREAKOVER VOLTAGE VS.

JUNCTION TEMPERATURE

JUNCTION TEMPERATURE (°C)

HOLDING CURRENT VS.

JUNCTION TEMPERATURE

JUNCTION TEMPERATURE (°C)

BREAKOVER VOLTAGE VS.

RATE OF RISE OF

OFF-STATE VOLTAGE

RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)

100 (%)

BREAKOVER VOLTAGE

(

dv/dt = xV/µs

)

BREAKOVER VOLTAGE

(

dv/dt = 1V/µs

)

160

100

80

40 20

0

14040–40–60

–20 0 20 60 80

140

100120

60

120

TYPICAL EXAMPLE

14040–40–60

–20 0 20 60 80 100120

10

5

7 5

3 2

10

4

7 5

3 2

10

3

7 5

3 2

10

2

TYPICAL EXAMPLE

10

1

10

3

7 5

3 2

–60 –20 20

10

2

7 5

3 2

60 100 140

4

–40 0 40 80 120

TYPICAL EXAMPLE

2310

1

5710223 5710323 5710

4

120

0

20

40

60

80

100

140

160

Tj = 125°CTYPICAL EXAMPLE

I QUADRANT

III QUADRANT

160

120 100

60

20

0

1.60

0.2 0.6 1.0 1.4

40

80

140

0.4 0.8 1.2

NATURAL CONVECTION NO FINS CURVES APPLY REGARDLESS OF CONDUCTION ANGLE RESISTIVE, INDUCTIVE LOADS

140–60 –20 20 60 100

10

3

7 5

3 2

10

2

7 5

3 2

10

1

7 5

3 2

10

0

–40 0 40 80 120

T

2

+

, G

+

T

2

–

, G

–

  

T

2

+

, G

–

TYPICAL EXAMPLE

DISTRIBUTION

100 (%)

HOLDING CURRENT

(

T

j

= t°C

)

HOLDING CURRENT

(

T

j

= 25°C

)

100 (%)

REPETITIVE PEAK OFF-STATE CURRENT

(

T

j

= t°C

)

REPETITIVE PEAK OFF-STATE CURRENT

(

T

j

= 25°C

)

100 (%)

BREAKOVER VOLTAGE

(

T

j

= t°C

)

BREAKOVER VOLTAGE

(

T

j

= 25°C

)

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR3AS

LOW POWER USE

NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

Feb.1999

COMMUTATION CHARACTERISTICS

CRITICAL RATE OF RISE OF OFF-STATE

COMMUTATING VOLTAGE (V/µs)

RATE OF DECAY OF ON-STATE

COMMUTATING CURRENT (A/ms)

GATE TRIGGER CURRENT VS.

GATE CURRENT PULSE WIDTH

GATE CURRENT PULSE WIDTH (µs)

100 (%)

GATE TRIGGER CURRENT

(

tw

)

GATE TRIGGER CURRENT

(

DC

)

10

1

10

3

7 5

3 2

10

0

23 5710

1

10

2

7 5

3 2

23 5710

2

4

44

I

RGT III

I

RGT I

I

FGT I

TYPICAL EXAMPLE

10

0

10

2

7 5

3 2

10

0

23 5710

1

10

1

7 5

3 2

23 5710

2

4

44

TYPICAL EXAMPLE T

j

= 125°C

I

T

= 4A τ = 500µs V

D

= 200V

f = 3Hz

I QUADRANT

III QUADRANT

MINIMUM CHARACTERISTICS VALUE

VOLTAGE WAVEFORM

CURRENT WAVEFORM

V

D

t

(dv/dt)

C

I

T

τ

t

(di/dt)

C

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR3AS

LOW POWER USE

NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

6Ω 6Ω

6Ω

6V 6V

6V

R

G

R

G

R

G

A

V

A

V

A

V

TEST PROCEDURE 1

TEST PROCEDURE 3

TEST PROCEDURE 2

GATE TRIGGER CHARACTERISTICS TEST CIRCUITS