Page 1
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
APPLICATION
Solid state relay, hybrid IC
BCR16CS
•IT (RMS) ......................................................................16A
•V
DRM ..............................................................400V/600V
•I
FGT !, IRGT !, IRGT # .........................30mA (20mA)
✽5
Symbol
V
DRM
VDSM
Parameter
Repetitive peak off-state voltage
✽1
Non-repetitive peak off-state voltage
✽1
Voltage class
Unit
V
V
MAXIMUM RATINGS
8
400
500
12
600
720
Symbol
I
T (RMS)
ITSM
I
2
t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Parameter
RMS on-state current
Surge on-state current
I
2
t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine full wave 360° conduction, T
c=100°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
Ratings
16
170
121
5.0
0.5
10
2
–40 ~ +125
–40 ~ +125
1.2
✽1. Gate open.
231
4
TYPE
NAME
VOLTAGE
CLASS
10.5 MAX
5
1
0.8
4.5
1.3
0.5
3.0
+0.3
–0.5
0
+0.3
–0
(1.5)
1.5 MAX
1.5 MAX
8.6±0.3
9.8±0.5
2.6±0.4
4.5
∗
OUTLINE DRAWING
Dimensions
in mm
TO-220S
24
1
3
1
2
3
4
T
1
TERMINAL
T2 TERMINAL
GATE
TERMINAL
T
2
TERMINAL
∗
Measurement
point of case
temperature
Page 2
Feb.1999
4.40.4 1.2 2.4 3.20.8 1.6 2.0 2.8 3.6 4.0
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
Tj = 125°C
Tj = 25°C
10023 5710
1
80
60
40
20
23 5710
2
44
100
120
140
160
180
200
0
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
✽2.Measurement using the gate trigger characteristics measurement circuit.
✽3.The critical-rate of rise of the off-state commutating voltage is shown in the table below.
✽4.The contact thermal resistance R
th (c-f) in case of greasing is 1.0°C/W.
✽5.High sensitivity (I
GT≤20mA) is also available. (IGT item 1)
Test conditions
Voltage
class
8
12
V
DRM
(V)
400
600
Min.
—
10
—
10
Commutating voltage and current waveforms
(inductive load)
(dv/dt) c
Symbol
R
L
R
L
Unit
V/µs
1. Junction temperature
T
j=125°C
2. Rate of decay of on-state commutating current
(di/dt)
c=–8A/ms
3. Peak off-state voltage
V
D=400V
Symbol
I
DRM
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
(dv/dt)c
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
✽2
Gate trigger current
✽2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Test conditions
T
j=125°C, VDRM applied
T
c=25°C, ITM=25A, Instantaneous measurement
T
j=25°C, VD=6V, RL=6Ω, RG=330Ω
T
j=25°C, VD=6V, RL=6Ω, RG=330Ω
T
j=125°C, VD=1/2VDRM
Junction to case
✽4
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
V/µs
Typ.
—
—
—
—
—
—
—
—
—
—
—
!
@
#
!
@
#
ELECTRICAL CHARACTERISTICS
Limits
Min.
—
—
—
—
—
—
—
—
0.2
—
✽3
Max.
2.0
1.5
1.5
1.5
1.5
30
✽5
30
✽5
30
✽5
—
1.4
—
SUPPLY
VOLTAGE TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
V
D
(dv/dt)c
PERFORMANCE CURVES
Page 3
Feb.1999
2310
2
5710
3
1.6
0
2310
–1
5710023 5710123 5710
2
0.8
0.6
0.4
0.2
1.0
1.2
1.4
10
0
2310
1
5710223 5710323 5710
4
3
2
10
1
7
5
3
2
7
5
7
5
3
2
10
–1
VGD = 0.2V
PGM = 5W
PG(AV) = 0.5WVGM = 10V
VGT = 1.5V
IGM = 2A
IFGT I, IRGT I, IRGT III
10
1
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140
4
4
–40 0 40 80 120
TYPICAL EXAMPLE
10
1
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140
4
4
–40 0 40 80 120
IFGT I, IRGT I
IRGT III
TYPICAL EXAMPLE
40
30
15
10
5
35
25
20
0
200
24 86 1012141618
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
40
12108
160
120
100
60
20
0
200
80
140
24
6141618
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
RMS ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
CASE TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
TRANSIENT THERMAL IMPEDANCE (°C/W)
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE VOLTAGE (V)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
GATE CHARACTERISTICS
100 (%)
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
100 (%)
GATE TRIGGER VOLTAGE
(
T
j
= t°C
)
GATE TRIGGER VOLTAGE
(
T
j
= 25°C
)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
Page 4
Feb.1999
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140
4
4
–40 0 40 80 120
10
1
TYPICAL EXAMPLE
160
100
80
40
20
0
14040–40–60
–20 0 20 60 80
140
100120
60
120
TYPICAL EXAMPLE
14040–40–60
–20 0 20 60 80 100120
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
TYPICAL EXAMPLE
LACHING CURRENT VS.
JUNCTION TEMPERATURE
LACHING CURRENT (mA)
JUNCTION TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
160–40 0 40 80 120
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
T
2
+
, G
+
T
2
–
, G
–
TYPICAL
EXAMPLE
T
2
+
, G
–
TYPICAL
EXAMPLE
DISTRIBUTION
160
120
100
60
20
0
3.21.60
0.8 1.2 2.0 2.4 2.8
40
80
140
0.4
NATURAL CONVECTION
NO FINS
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE LOADS
40
12108
160
120
100
60
20
0
200
80
140
24
6141618
60 60 t2.3
100 100 t2.3
120 120 t2.3
ALL FINS ARE COPPER
AND ALUMINUM
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
100 (%)
HOLDING CURRENT
(
T
j
= t°C
)
HOLDING CURRENT
(
T
j
= 25°C
)
100 (%)
REPETITIVE PEAK OFF-STATE CURRENT
(
T
j
= t°C
)
REPETITIVE PEAK OFF-STATE CURRENT
(
T
j
= 25°C
)
100 (%)
BREAKOVER VOLTAGE
(
T
j
= t°C
)
BREAKOVER VOLTAGE
(
T
j
= 25°C
)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
Page 5
Feb.1999
COMMUTATION CHARACTERISTICS
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µs)
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
100 (%)
BREAKOVER VOLTAGE
(
dv/dt = xV/µs
)
BREAKOVER VOLTAGE
(
dv/dt = 1V/µs
)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (µs)
100 (%)
GATE TRIGGER CURRENT
(
tw
)
GATE TRIGGER CURRENT
(
DC
)
10
1
10
3
7
5
3
2
10
0
23 5710
1
10
2
7
5
3
2
23 5710
2
4
4
44
I
RGT III
I
RGT I
I
FGT I
TYPICAL EXAMPLE
2310
1
5710223 5710323 5710
4
120
0
20
40
60
80
100
140
160
# 2
# 1
TYPICAL EXAMPLE
T
j
= 125°C
I QUADRANT
III QUADRANT
10
1
2310
0
5710123 5710223 5710
3
3
2
10
2
7
5
3
2
7
5
7
5
3
2
10
0
TYPICAL
EXAMPLE
T
j
= 125°C
I
T
= 4A
τ = 500µs
V
D
= 200V
f = 3Hz
I QUADRANT
III QUADRANT
MINIMUM
CHARACTERISTICS
VALUE
VOLTAGE WAVEFORM
CURRENT WAVEFORM
V
D
t
(dv/dt)
C
I
T
τ
t
(di/dt)
C
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
6Ω 6Ω
6Ω
6V 6V
6V
R
G
R
G
R
G
A
V
A
V
A
V
TEST PROCEDURE 1
TEST PROCEDURE 3
TEST PROCEDURE 2
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
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