Page 1
NPN Silicon Digital Transistor
g
BCR148T
Switching circuit, inverter, interface circuit,
3
driver circuit
Built in bias resistor (R1=47k, R2=47k)
C
3
1
R
1
R
2
21
EB
EHA07184
VPS05996
Type Marking Pin Configuration Package
BCR148T WEs 1 = B 2 = E 3 = C SC75
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation, TS = 109 °C
Junction temperature
Storage temperature
Symbol Value Unit
V
V
V
V
I
P
T
T
C
CEO
CBO
EBO
i(on)
tot
j
st
50 V
50
10
50
70 mA
250 mW
150 °C
-65 ... 150
2
Thermal Resistance
Junction - soldering point
1
For calculation of R
please refer to Application Note Thermal Resistance
thJA
1)
R
thJS
165 K/W
Nov-29-20011
Page 2
BCR148T
A
Electrical Characteristics at T
=25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
= 100 µA, IB = 0
C
Collector-base breakdown voltage
I
= 10 µA, IE = 0
C
Collector cutoff current
V
= 40 V, IE = 0
CB
Emitter cutoff current
V
= 10 V, IC = 0
EB
DC current gain 1)
I
= 5 mA, VCE = 5 V
C
Collector-emitter saturation voltage1)
I
= 10 mA, IB = 0.5 mA
C
V
(BR)CEO
V
(BR)CBO
I
CBO
I
EBO
h
FE
V
CEsat
50 - - V
50 - -
- - 100 nA
- - 164 µA
70 - - -
- - 0.3 V
Input off voltage
I
= 100 µA, VCE = 5 V
C
Input on Voltage
I
= 2 mA, VCE = 0.3 V
C
Input resistor
Resistor ratio
AC Characteristics
I
= 10 mA, VCE = 5 V, f = 100 MHz
C
V
= 10 V, f = 1 MHz
CB
V
i(off)
V
i(on)
R
1
R1/R
f
T
C
cb
0.8 - 1.5
1 - 3
32 47 62
2
0.9 1 1.1 -
k
- - MHz100Transition frequency
- 3 pFCollector-base capacitance
-
1) Pulse test: t < 300s; D < 2%
Nov-29-20012
Page 3
BCR148T
DC Current Gain hFE = f (IC)
VCE = 5V (common emitter configuration)
3
10
-
2
10
FE
h
1
10
0
10
10
-1
10
0
10
1
10
2
mA
I
C
10
Collector-Emitter Saturation Voltage
V
= f (IC), hFE = 20
CEsat
2
10
mA
C
I
1
10
0
3
10
0.0 0.2 0.4 0.6
V
V
1.0
CEsat
Input on Voltage V
i(on)
= f (IC)
VCE = 0.3V (common emitter configuration)
2
10
mA
1
10
C
I
0
10
-1
10
10
-1
10
0
10
1
V
10
V
i(on)
Input off voltage V
i(off)
= f (IC)
VCE = 5V (common emitter configuration)
1
10
mA
0
10
C
I
-1
10
-2
10
-3
2
10
0 1 2 3
V
V
5
i(off)
Nov-29-20013
Page 4
BCR148T
Total power dissipation P
300
mW
200
tot
P
150
100
50
= f (TS)
tot
0
0 20 40 60 80 100 120
Permissible Pulse Load R
3
10
K/W
2
10
thJS
R
1
10
D=0.5
0.2
0.1
0.05
10
0
0.02
0.01
0.005
0
thJS
°C
T
= f (tp)
150
S
Permissible Pulse Load
P
totmax
/ P
totDC
= f (tp)
3
10
totDC
/ P
10
totmax
P
10
2
1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
-1
10
0
10
-6
10
-5
10
-4
10
-3
10
-2
s
t
0
10
p
10
-6
10
-5
10
-4
10
-3
10
-2
s
t
0
10
p
Nov-29-20014
Page 5
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