Page 1
NPN Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
BCR116...
• Built in bias resistor (R
=4.7 kΩ, R2=47 kΩ)
1
• BCR116S: Two internally isolated
transistors with good matching
in one multichip package
• BCR116S: For orientation in reel see
package information below
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BCR116
BCR116S
BCR116W
C
3
R
1
R
2
21
EB
EHA07184
C1 B2 E2
6 54
R
2
R
TR2
1
R
TR1
1
R
2
321
C2B1E1
EHA07174
Type Marking Pin Configuration Package
BCR116
BCR116S
BCR116W
WGs
WGs
WGs
1=B
1=E1
1=B
2=E
2=B1
2=E
3=C
3=C2
3=C
-
4=E2
-
-
5=B2
-
-
6=C1
-
SOT23
SOT363
SOT323
1
2011-08-19
Page 2
Maximum Ratings
g
BCR116...
Parameter
Symbol Value Unit
Collector-emitter voltage V
Collector-base voltage V
Input forward voltage V
Input reverse voltage V
Collector current I
Total power dissipation-
BCR116, T
BCR116S, T
BCR116W, T
≤ 102°C
S
≤ 115°C
S
≤ 124°C
S
P
Junction temperature T
Storage temperature T
Thermal Resistance
Parameter
Junction - soldering point1)
BCR116
CEO
CBO
i(fwd)
i(rev)
C
tot
50 V
50
30
5
100 mA
mW
200
250
250
j
st
150 °C
-65 ... 150
Symbol Value Unit
R
thJS
K/W
≤ 240
BCR116S
BCR116W
1
For calculation of R
please refer to Application Note AN077 (Thermal Resistance Calculation)
thJA
≤ 140
≤ 105
2
2011-08-19
Page 3
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
= 100 µA, IB = 0
C
V
(BR)CEO
50 - -
BCR116...
V
Collector-base breakdown voltage
I
= 10 µA, IE = 0
C
Collector-base cutoff current
V
= 40 V, IE = 0
CB
Emitter-base cutoff current
V
= 5 V, IC = 0
EB
DC current gain1)
I
= 5 mA, VCE = 5 V
C
Collector-emitter saturation voltage1)
I
= 10 mA, IB = 0.5 mA
C
Input off voltage
I
= 100 µA, VCE = 5 V
C
Input on voltage
I
= 2 mA, VCE = 0.3 V
C
Input resistor R
V
(BR)CBO
I
CBO
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
1
Resistor ratio R1/R
50 - -
- - 100 nA
- - 155 µA
70 - - -
- - 0.3 V
0.4 - 0.8
0.5 - 1.4
3.2 4.7 6.2 kΩ
2
0.09 0.1 0.11 -
AC Characteristics
Transition frequency
I
= 10 mA, VCE = 5 V, f = 100 MHz
C
Collector-base capacitance
V
= 10 V, f = 1 MHz
CB
1
Pulse test: t < 300µs; D < 2%
f
T
C
cb
3
- 150 - MHz
- 3 - pF
2011-08-19
Page 4
BCR116...
DC current gain hFE = ƒ(IC)
V
= 5V (common emitter configuration)
CE
3
10
2
10
FE
h
-40 °C
-25 °C
10
10
1
0
10
-4
25 °C
85 °C
125 °C
-3
10
10
-2
Collector-emitter saturation voltage
V
A
I
-1
10
C
= ƒ(IC), IC/IB = 20
CEsat
0.5
V
0.4
0.35
0.3
Vcesat
0.25
0.2
0.15
0.1
0.05
0
-3
10
-40 °C
-25 °C
25 °C
85 °C
125 °C
10
-2
A
I
-1
10
C
Input on Voltage Vi
V
= 0.3V (common emitter configuration)
CE
1
10
(on)
= ƒ(IC)
-40 °C
V
-25 °C
25 °C
85 °C
(on)
125 °C
Vi
0
10
-1
10
10
-5
10
-4
10
-3
10
Input off voltage V
V
= 5V (common emitter configuration)
CE
1
10
V
-40 °C
-25 °C
i(off)
= ƒ(IC)
25 °C
85 °C
-1
0
10
-5
125 °C
10
-4
10
-3
10
-2
I
-1
A
10
C
i(off)
V
10
-2
I
-1
A
10
C
10
4
2011-08-19
Page 5
BCR116...
Total power dissipation P
BCR116
300
mW
250
225
200
tot
P
175
150
125
100
75
50
25
0
0 15 30 45 60 75 90 105 120
= ƒ(TS)
tot
T
°C
Total power dissipation P
= ƒ(TS)
tot
BCR116S
300
mW
250
225
200
tot
P
175
150
125
100
75
50
25
150
0
0 15 30 45 60 75 90 105 120
S
°C
150
T
S
Total power dissipation P
BCR116W
300
mW
250
225
200
tot
P
175
150
125
100
75
50
25
0
0 15 30 45 60 75 90 105 120
= ƒ(TS)
tot
Permissible Pulse Load R
thJS
= ƒ(tp)
BCR116
3
10
K/W
2
10
thJS
R
1
10
0.5
0.2
0.1
0.05
10
0.02
0.01
0.005
D = 0
-3
10
-2
s
t
0
10
p
0
10
-1
10
°C
150
T
S
10
-6
10
-5
10
-4
5
2011-08-19
Page 6
BCR116...
Permissible Pulse Load
P
totmax/PtotDC
= ƒ(tp)
BCR116
3
10
-
totDC
/ P
2
10
totmax
P
1
10
0
10
10
-6
10
-5
10
-4
10
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-3
10
Permissible Puls Load R
thJS
= ƒ (tp)
BCR116S
3
10
K/W
2
10
thJS
R
1
10
0.5
0.2
0.1
0.05
10
0.02
0.01
0.005
D = 0
-3
10
-2
s
t
0
10
p
0
10
-1
-2
s
t
0
10
p
10
10
-6
10
-5
10
-4
Permissible Pulse Load
P
totmax/PtotDC
= ƒ(tp)
BCR116S
3
10
-
totDC
/ P
2
10
totmax
P
1
10
0
10
10
-6
10
-5
10
-4
10
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-3
10
Permissible Puls Load R
thJS
= ƒ (tp)
BCR116W
3
10
K/W
2
10
thJS
R
1
10
0.5
0.2
0.1
0.05
10
0.02
0.01
0.005
D = 0
-3
10
-2
s
t
0
10
p
0
10
-1
-2
s
t
0
10
p
10
10
-6
10
-5
10
-4
6
2011-08-19
Page 7
Permissible Pulse Load
BCR116...
P
totmax/PtotDC
BCR116W
3
10
-
totDC
/ P
2
10
totmax
P
1
10
0
10
-6
10
= ƒ(tp)
-5
10
10
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-4
10
-3
10
-2
s
t
0
10
p
7
2011-08-19
Page 8
Package Outline
Foot Print
Package SOT23
±0.1
2.9
12
1)
+0.1
0.4
-0.05
1.9
0.25MBC
1) Lead width can be 0.6 max. in dambar area
B
3
C
0.95
0.8
0.15 MIN.
±0.15
2.4
0.2
±0.1
1
0.1 MAX.
10˚ MAX.
0.08...0.15
0...8˚
M
A
±0.1
1.3
10˚ MAX.
A
BCR116...
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
Pin 1
0.8 1.2
EH
4
0.9
s
0.9 0.91.3
Manufacturer
2005, June
Date code (YM)
BCW66
Type code
0.2
Pin 1
3.15
2.13
8
2.65
8
1.15
2011-08-19
Page 9
Package Outline
Package SOT323
±0.2
2
0.3
+0.1
-0.05
3x
M
0.1
3
0.1 MAX.
0.1
0.9
BCR116...
±0.1
A
Foot Print
Marking Layout (Example)
12
0.650.65
0.6
0.8
0.65
0.65
1.6
±0.1
2.1
0.1 MIN.
M
0.2 A
0.15
+0.1
-0.05
±0.1
1.25
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
Pin 1
Pin 1
2.15
Manufacturer
2005, June
Date code (YM)
BCR108W
Type code
4
8
2.3
0.2
1.1
9
2011-08-19
Page 10
Package Outline
Package SOT363
±0.2
2
0.2
+0.1
-0.05
5 4
6x
M
0.1
0.1 MAX.
0.1
0.9
BCR116...
±0.1
A
Pin 1
marking
1623
Foot Print
Marking Layout (Example)
+0.1
-0.05
±0.1
1.25
±0.1
2.1
0.1 MIN.
M
0.2 A
0.15
0.650.65
0.3
0.70.9
1.6
0.65
0.65
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Pin 1 marking
Laser marking
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
4
Pin 1
marking
2.15
Manufacturer
2005, June
Date code (Year/Month)
BCR108S
Type code
0.2
8
2.3
1.1
10
2011-08-19
Page 11
BCR116...
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
>).
11
2011-08-19
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