Datasheet BCR1002N3 Datasheet (CYStech) [ru]

CYStech Electronics Corp.

PNPN Epitaxial Planar SCR

Spec. No. : C700N3
Issued Date : 2008.02.25
Revised Date :2012.10.16
Page No. : 1/6

BCR1002N3

Descriptions

The BCR1002N3 is designed for high volume consumer applications such as temperature, light, and speed
control; process and remote control, and warning systems where reliability of operation is important.

Features

• Practical level triggering and holding characteristics

• On state current rating of 0.2A

• Sensitive gate allows triggering by microcontrollers and other logic circuits

• Pb-free package

RMS

Symbol Outline

BCR1002N3

G：Gate
A：Anode
K：Cathode

SOT-23

A

G

K

BCR1002N3 CYStek Product Specification

CYStech Electronics Corp.

Absolute Maximum Ratings (TJ=25°C)

Parameter Symbol Limits Unit

Spec. No. : C700N3
Issued Date : 2008.02.25
Revised Date :2012.10.16
Page No. : 2/6

Peak Repetitive Off-State Voltage @TJ=-40℃ to 125℃,

V

GK=1KΩ

R
On-State Current @TC=80℃
Average On-State Current @ TC=80℃
Reverse Peak Gate Voltage @TA=25℃, Pulse Width≤1μs
Forward Peak Gate Current @TA=25℃, Pulse Width≤1μs
Forward Average Gate Power @ TA=25℃, t=8.3ms
Thermal Resistance, Junction to Ambient RθJA 556
Thermal Resistance, Junction to Case RθJC 208
Junction Temperature Tj -40~+125
Storage Temperature Tstg -40~+150

Note : Stress exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional

operation above the recommended operating conditions is not implied. Extended exposure to stresses above the
recommended operating conditions may affect device reliability.

V

DRM can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however , positive gate

voltage shall not be applied concurrent with negative potential on the anode. Blocking voltage shall not be tested with
a constant current source such that the voltage ratings of the device are exceeded.

DRM 140 V

IT(RMS) 350 mA

IT(AV) 220 mA

VGRM 8 V

IGM 500 mA

G(AV) 100 mW

P

°C/W
°C/W

°C
°C

Characteristics

(Ta=25°C)

Symbol Min. Typ. Max. Unit Test Conditions

I

- - 100 μA

DRM

I

- - 10 μA

DRM

VD=140V, RGK=1KΩ, TC=125℃
VD=140V, RGK=1KΩ, TC=25℃

*VTM - - 1.5 V ITM=200mA

IGT - - 100

IH - - 5

μA

mA

VD=7V, RL=100Ω
VD=7V, RGK=1KΩ

IL - - 6 mA VD=7V, IG=200μA

VGT - - 0.8 V

dV/dt 25 - - V/μs

VD=7V, RL=100Ω
VD=35V, RGK=1KΩ

dI/dt 30 - - A/μs IG=10mA, dIG/dt=100mA/μs, PW=10μs

*Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%

Ordering Information

Device Package Shipping Marking

BCR1002N3

SOT-23

(Pb-free)

3000 pcs / Tape & Box CR

BCR1002N3 CYStek Product Specification

CYStech Electronics Corp.

Typical Characteristics

Spec. No. : C700N3
Issued Date : 2008.02.25
Revised Date :2012.10.16
Page No. : 3/6

Gate Trigger Current vs Junction Temperature

70

60

A)

μ

(

GT

50

40

30

20

Gate Trigger Current---I

10

0

-50 -25 0 25 50 75 100 125

JunctionTemperature---T

(℃)

J

Holding Current vs Junction Temperature

10

(mA)

H

Gate Trigger Voltage vs Junction Temperature

1

0.9

(V)

0.8

GT

0.7

0.6

0.5

0.4

0.3

0.2

Gate Trigger Voltage---V

0.1

0

-50-250 255075100125
Junction Temperature---T

(°C)

J

Latching Current vs Junction Temperature

1000

A)

μ

(

L

1

Holding Current---I

0.1

-50 -25 0 25 50 75 100 125

Junction Temperature---T

(°C)

J

On-state Characteristics

1000

(mA)

T

100

Instantaneous On-state Current---I

TJ=125°C

TJ=25°C

TJ=-40°C

100

Latching Current---I

10

-50 -25 0 25 50 75 100 125

Junction Temperature---T

(°C)

J

10

00.40.81.21.62

Instantaneous On-state Voltage---V

T

(V)

BCR1002N3 CYStek Product Specification

Reel Dimension

CYStech Electronics Corp.

Spec. No. : C700N3
Issued Date : 2008.02.25
Revised Date :2012.10.16
Page No. : 4/6

Carrier Tape Dimension

BCR1002N3 CYStek Product Specification

CYStech Electronics Corp.

Recommended wave soldering condition

Product Peak Temperature Soldering Time

Spec. No. : C700N3
Issued Date : 2008.02.25
Revised Date :2012.10.16
Page No. : 5/6

Pb-free devices

260 +0/-5 °C

Recommended temperature profile for IR reflow

5 +1/-1 seconds

Profile feature Sn-Pb eutectic Assembly

Average ramp-up rate

(Tsmax to Tp)

Preheat

−Temperature Min(T

−Temperature Max(TS max)

−Time(ts min to ts max)

Time maintained above:

−Temperature (TL)

− Time (tL)

Peak Temperature(TP)

Time within 5°C of actual peak

temperature(tp)

Ramp down rate

Time 25 °C to peak temperature

Note : All temperatures refer to topside of the package, measured on the package body surface.

S min)

3°C/second max. 3°C/second max.

100°C
150°C

60-120 seconds

183°C

60-150 seconds

240 +0/-5 °C 260 +0/-5 °C

10-30 seconds 20-40 seconds

6°C/second max. 6°C/second max.

6 minutes max. 8 minutes max.

Pb-free Assembly

150°C
200°C

60-180 seconds

217°C

60-150 seconds

BCR1002N3 CYStek Product Specification

SOT-23 Dimension

CYStech Electronics Corp.

Spec. No. : C700N3
Issued Date : 2008.02.25
Revised Date :2012.10.16
Page No. : 6/6

Marking:

CR

TE

XX

3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3

*: Typical

C

DIM

A

L

3

S

B

1

V

D

G

2

H

K

Inches Millimeters

Min. Max. Min. Max.

J

DIM

Device Code

Date Code

Style: Pin 1.Cathode 2.Gate 3.Anode

Inches Millimeters

Min. Max. Min. Max.
A 0.1102 0.1204 2.80 3.04 J 0.0034 0.0070 0.085 0.177
B 0.0472 0.0630 1.20 1.60 K 0.0128 0.0266 0.32 0.67
C 0.0335 0.0512 0.89 1.30 L 0.0335 0.0453 0.85 1.15
D 0.0118 0.0197 0.30 0.50 S 0.0830 0.1083 2.10 2.75

G 0.0669 0.0910 1.70 2.30 V 0.0098 0.0256 0.25 0.65

H 0.0005 0.0040 0.013 0.10

Notes: 1.Controlling dimension: millimeters.

Material:

• Lead: Pure tin plated.

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

• CYStek reserves the right to make changes to its products without notice.

• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

BCR1002N3 CYStek Product Specification