Page 1
BCR 08PN
NPN/PNP Silicon Digital Tansistor Array
• Switching circuit, inverter, interface circuit,
drive circuit
• Two (galvanic) internal isolated NPN/PNP
Transistor in one package
• Built in bias resistor (R1=2.2kΩ, R2=47kΩ)
Tape loading orientation
Type Marking Ordering Code Pin Configuration Package
BCR 08PN WFs Q62702-C2486 1=E1 2= B1 3=C2 4=E2 5=B2 6=C1 SOT-363
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation,
Junction temperature
Storage temperature
T
= 115°C
S
V
V
V
V
I
P
T
T
C
CEO
CBO
EBO
i(on)
tot
j
stg
50 V
50
5
10
100 mA
250 mW
150 °C
- 65 ... + 150
Thermal Resistance
Junction ambient
1)
R
thJA
≤
275 K/W
Junction - soldering point
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group
R
thJS
≤ 140
1 Nov-26-1996
Page 2
BCR 08PN
Electrical Characteristics at
T
=25°C, unless otherwise specified
A
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
= 100 µA,
C
I
B
= 0
Collector-base breakdown voltage
I
= 10 µA,
C
I
B
= 0
Collector cutoff current
V
= 40 V,
CB
I
E
= 0
Emitter cutoff current
V
= 5 V,
EB
I
C
= 0
DC current gain
I
= 5 mA,
C
V
CE
= 5 V
Collector-emitter saturation voltage 1)
V
(BR)CEO
V
(BR)CBO
I
CBO
I
EBO
h
FE
V
CEsat
V
50 - -
50 - -
nA
- - 100
µA
- - 164
-
70 - -
V
I
= 10 mA,
C
I
= 0.5 mA
B
Input off voltage
I
= 100 µA,
C
V
CE
= 5 V
Input on Voltage
I
= 2 mA,
C
V
CE
= 0.3 V
Input resistor
Resistor ratio
AC Characteristics for NPN Type
Transition frequency
I
= 10 mA,
C
V
= 5 V, f = 100 MHz
CE
Collector-base capacitance
V
= 10 V, f = 1 MHz
CB
1) Pulse test: t < 300µs; D < 2%
V
V
R
R
f
C
T
i(off)
i(on)
1
/
R
1
cb
- - 0.3
0.4 - 0.8
0.5 - 1.1
1.5 2.2 2.9 k
2
0.042 0.047 0.052 -
Ω
MHz
- 170 pF
- 2 -
Semiconductor Group
2 Nov-26-1996
Page 3
NPN TYPE
BCR 08PN
DC Current Gain
V
= 5V (common emitter configuration)
CE
h
=
f (I
FE
)
C
3
10
-
h
FE
2
10
1
10
Collector-Emitter Saturation Voltage
V
I
CEsat
10
C
mA
10
= f(
2
1
I
),
h
FE
= 20
C
0
10
-1
10
Input on Voltage
V
= 0.3V (common emitter configuration)
CE
10
V
0
i(on)
= f(
1
10
I
)
C
2
10
mA
I
C
1
10
0
10
0
mA
I
C
10
0.0 0.1 0.2 0.3 V 0.5
Input off voltage
V
= 5V (common emitter configuration)
CE
V
i(off)
= f(
I
)
C
V
CEsat
1
10
mA
I
C
0
10
-1
10
-2
10
-1
10
-1
10
Semiconductor Group
10
-3
0
10
1
V
V
i(on)
10
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V 1.0
V
i(off)
3 Nov-26-1996
Page 4
PNP TYPE
BCR 08PN
DC Current Gain
V
= 5V (common emitter configuration)
CE
h
=
f (I
FE
)
C
3
10
-
h
FE
2
10
1
10
Collector-Emitter Saturation Voltage
V
I
CEsat
10
C
mA
10
= f(
2
1
I
),
h
FE
= 20
C
0
10
-1
10
Input on Voltage
V
= 0.3V (common emitter configuration)
CE
10
V
0
i(on)
= f(
1
10
I
)
C
2
10
mA
I
C
1
10
0
10
0
mA
I
C
10
0.0 0.1 0.2 0.3 V 0.5
Input off voltage
V
= 5V (common emitter configuration)
CE
V
i(off)
= f(
I
)
C
V
CEsat
1
10
mA
I
C
0
10
-1
10
-2
10
-1
10
-1
10
Semiconductor Group
10
-3
0
10
1
V
V
i(on)
10
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V 1.0
V
i(off)
4 Nov-26-1996
Page 5
BCR 08PN
Total power dissipation
P
tot
* Package mounted on epoxy
300
mW
P
tot
T
200
150
100
50
A
= f (
T
*;
T
)
A
S
T
S
0
0 20 40 60 80 100 120 °C 150
Permissible Pulse Load
3
10
K/W
R
thJS
2
10
1
10
0
10
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
= f(
t
p
TA,T
)
S
Permissible Pulse Load
P
totmax
/
P
totDC
= f(
t
)
p
3
10
-
P
/
P
totDC
10
10
2
1
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
totmax
-1
10
10
-6
10
-5
Semiconductor Group
10
0
-4
10
-3
-2
10
10
-1
t
p
0
10
s
10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
0
10
s
5 Nov-26-1996
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