Datasheet BCR08AS-8L Datasheet (POWEREX)

Feb.1999

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR08AS-8

LOW POWER USE

NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

•IT (RMS) .....................................................................0.8A

•V

DRM .......................................................................400V

•I

FGT !, IRGT !, IRGT # .............................................5mA

•I

FGT # .....................................................................10mA

BCR08AS-8

APPLICATION

Hybrid IC, solid state relay, control of household equipment such as electric fan · washing machine, other general purpose control applications

Symbol

I

T (RMS)

ITSM

I

2

t

PGM PG (AV) VGM IGM Tj Tstg

—

Parameter RMS on-state current Surge on-state current

I

2

t

for fusing

Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight

Conditions

Commercial frequency, sine full wave 360° conduction, T

a=40°C

✽4

60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state

current

Typical value

Unit

A A

A

2

s

W W

V A

°C °C

mg

Ratings

0.8 8

0.26

1

0.1 6 1

–40 ~ +125 –40 ~ +125

48

Symbol

V

DRM

VDSM

Parameter

Repetitive peak off-state voltage

✽1

Non-repetitive peak off-state voltage

✽1

Voltage class

8 (marked “B•”)

400 500

Unit

V V

MAXIMUM RATINGS

✽1. Gate open.

2

1

3

1 2 3

T

1

TERMINAL

T

2

TERMINAL

GATE TERMINAL

4.4±0.1

1.5±0.1

1.6±0.2

0.4±0.07

0.8 MIN

2.5±0.1

3.9±0.3

0.4

+0.03 –0.05

1

2

3

(Back side)

OUTLINE DRAWING

Dimensions

in mm

SOT-89

0.5±0.07

1.5±0.11.5±0.1

Feb.1999

Symbol

I

DRM

VTM VFGT ! VRGT ! VRGT # VFGT # IFGT ! IRGT ! IRGT # IFGT # VGD Rth (j-a)

(dv/dt)c

Test conditions

T

j=125°C, VDRM applied

T

c=25°C, ITM=1.2A, Instantaneous measurement

T

j=25°C, VD=6V, RL=6Ω, RG=330Ω

T

j=25°C, VD=6V, RL=6Ω, RG=330Ω

T

j=125°C, VD=1/2VDRM

Junction to case

✽4

Unit

mA

V V V V

V mA mA mA mA

V

°C/W

V/µs

Typ.

— — — — — — — — — — — —

—

!

@

#

$

!

@

#

$

✽2.Measurement using the gate trigger characteristics measurement circuit. ✽3.The critical-rate of rise of the off-state commutating voltage is shown in the table below. ✽4.Mounted on 25mm × 25mm × t0.7mm ceramic plate with solder.

Test conditions

Voltage

class

8

V

DRM

(V)

400

Unit

V/µs

Commutating voltage and current waveforms

(inductive load)

(dv/dt) c

Min.

2

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR08AS-8

LOW POWER USE

NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

ELECTRICAL CHARACTERISTICS

Parameter

Repetitive peak off-state current On-state voltage

Gate trigger voltage

✽2

Gate trigger current

✽2

Gate non-trigger voltage Thermal resistance

Critical-rate of rise of off-state commutating voltage

1. Junction temperature T

j=125°C

2. Rate of decay of on-state commutating current (di/dt)

c=–0.4A/ms

3. Peak off-state voltage V

D=400V

Limits

Min.

— — — — — — — — — —

0.1 —

✽3

Max.

1.0

2.0

2.0 5 5 5

10 — 65

—

10

–1

10

1

7 5

3 2

012

10

0

7 5

3 2

345

4

Tj = 125°C

Tj = 25°C

10023 5710

1

4

2

23 5710

2

44

6

8

10

0

MAXIMUM ON-STATE CHARACTERISTICS

ON-STATE CURRENT (A)

ON-STATE VOLTAGE (V)

RATED SURGE ON-STATE CURRENT

SURGE ON-STATE CURRENT (A)

CONDUCTION TIME

(CYCLES AT 60Hz)

SUPPLY VOLTAGE TIME

TIME

MAIN CURRENT

MAIN VOLTAGE

(di/dt)c

V

D

(dv/dt)c

PERFORMANCE CURVES

Feb.1999

10

0

2310

0

5710123 5710223 5710

3

10

2

7 5

3 2

10

1

7 5

3 2

7 5

3 2

10

–1

VGM = 10V

V

GT

PGM = 1W

P

G(AV)

= 0.1W

IGM = 1A

VGD = 0.2VI

FGT III

I

FGT I

,

I

RGT I

, I

RGT III

MAXIMUM ON-STATE POWER

DISSIPATION

ON-STATE POWER DISSIPATION (W)

RMS ON-STATE CURRENT (A)

ALLOWABLE CASE TEMPERATURE

VS. RMS ON-STATE CURRENT

CASE TEMPERATURE (°C)

RMS ON-STATE CURRENT (A)

MAXIMUM TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

TRANSIENT THERMAL IMPEDANCE (°C/W)

CONDUCTION TIME

(CYCLES AT 60Hz)

GATE CHARACTERISTICS

GATE VOLTAGE (V)

GATE CURRENT (mA)

GATE TRIGGER CURRENT VS.

JUNCTION TEMPERATURE

JUNCTION TEMPERATURE (°C)

100 (%)

GATE TRIGGER CURRENT (T

j

= t°C)

GATE TRIGGER CURRENT (T

j

= 25°C)

GATE TRIGGER VOLTAGE VS.

JUNCTION TEMPERATURE

JUNCTION TEMPERATURE (°C)

100 (%)

GATE TRIGGER VOLTAGE

(

T

j

= t°C

)

GATE TRIGGER VOLTAGE

(

T

j

= 25°C

)

10

1

10

3

7 5

3 2

–60 –20 20

10

2

7 5

3 2

60 100 140

4

–40 0 40 80 120

V

RGT I VRGT III

V

FGT I VFGT III

TYPICAL EXAMPLE

10

1

10

3

7 5

3 2

–60 –20 20

10

2

7 5

3 2

60 100 140

4

–40 0 40 80 120

I

FGT I IRGT III IRGT I

I

FGT III

TYPICAL EXAMPLE

2.0

1.6

1.2

0.8

0.4

0

2.00

0.4 0.8 1.2 1.6

360° CONDUCTION RESISTIVE, INDUCTIVE LOADS

160

120 100

60

20

0

1.60

0.2 0.6 1.0 1.4

40

80

140

0.4 0.8 1.2

RESISTIVE, INDUCTIVE LOADS

CURVES APPLY REGARDLESS OF CONDUCTION ANGLE NATURAL CONVECTION

10

1

2310

–1

5710023 5710123 5710

2

10

3

7 5

3 2

10

2

7 5

3 2

7 5

3 2

10

0

2310

2

5710323 5710423 5710

5

JUNCTION TO AMBIENT

JUNCTION TO CASE

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR08AS-8

LOW POWER USE

NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

Feb.1999

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR08AS-8

LOW POWER USE

NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

LACHING CURRENT VS.

JUNCTION TEMPERATURE

LACHING CURRENT (mA)

JUNCTION TEMPERATURE (°C)

HOLDING CURRENT VS.

JUNCTION TEMPERATURE

HOLDING CURRENT (mA)

JUNCTION TEMPERATURE (°C)

REPETITIVE PEAK OFF-STATE

CURRENT VS. JUNCTION

TEMPERATURE

JUNCTION TEMPERATURE (°C)

BREAKOVER VOLTAGE VS.

JUNCTION TEMPERATURE

JUNCTION TEMPERATURE (°C)

100 (%)

BREAKOVER VOLTAGE

(

T

j

= t°C

)

BREAKOVER VOLTAGE

(

T

j

= 25°C

)

COMMUTATION CHARACTERISTICS

CRITICAL RATE OF RISE OF OFF-STATE

COMMUTATING VOLTAGE (V/µs)

RATE OF DECAY OF ON-STATE

COMMUTATING CURRENT (A/ms)

BREAKOVER VOLTAGE VS.

RATE OF RISE OF

OFF-STATE VOLTAGE

RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)

100 (%)

BREAKOVER VOLTAGE

(

dv/dt = xV/µs

)

BREAKOVER VOLTAGE

(

dv/dt = 1V/µs

)

160

100

80

40 20

0

14040–40–60

–20 0 20 60 80

140

100120

60

120

TYPICAL EXAMPLE

14040–40–60

–20 0 20 60 80 100120

10

5

7 5

3 2

10

4

7 5

3 2

10

3

7 5

3 2

10

2

TYPICAL EXAMPLE

14040–40–60

–20 0 20 60 80 100120

10

2

7 5

3 2

10

1

7 5

3 2

10

0

7 5

3 2

10

–1

TYPICAL EXAMPLE

DISTRIBUTION

2310

0

5710123 5710223 5710

3

120

0

20

40

60

80

100

140

160

Tj = 125°C

TYPICAL EXAMPLE

I QUADRANT

III QUADRANT

160–40

0 40 80 120

10

2

7 5

3 2

10

1

7 5

3 2

10

0

7 5

3 2

10

–1

T

2

+

, G

–

TYPICAL EXAMPLE

DISTRIBUTION

T

2

+

, G

+

T

2

–

, G

–

T

2

–

, G

+

    

10

0

2310

–1

5710023 5710123 5710

2

10

2

7 5

3 2

10

1

7 5

3 2

7 5

3 2

10

–1

TYPICAL EXAMPLE T

j

= 125°C

I

T

= 1A τ = 500µs V

D

= 200V

f = 3Hz

V

D

t

(dv/dt)

C

t

I QUADRANT

III QUADRANT

MINIMUM CHARACTERISTICS VALUE

VOLTAGE WAVEFORM

CURRENT WAVEFORM

I

T

τ

(di/dt)

C

100 (%)

REPETITIVE PEAK OFF-STATE CURRENT

(

T

j

= t°C

)

REPETITIVE PEAK OFF-STATE CURRENT

(

T

j

= 25°C

)

Feb.1999

GATE TRIGGER CURRENT VS.

GATE CURRENT PULSE WIDTH

GATE CURRENT PULSE WIDTH (µs)

100 (%)

GATE TRIGGER CURRENT

(

tw

)

GATE TRIGGER CURRENT

(

DC

)

10

1

10

3

7 5

3 2

10

0

23 5710

1

10

2

7 5

3 2

23 5710

2

4

44

I

RGT I IRGT III IFGT I

I

FGT III

TYPICAL EXAMPLE

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR08AS-8

LOW POWER USE

NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

6Ω 6Ω

6V 6V

R

G

R

G

R

G

R

G

A

V

A

V

A

V

A

V

TEST PROCEDURE 1

TEST PROCEDURE 3

TEST PROCEDURE 2

TEST PROCEDURE 4

GATE TRIGGER CHARACTERISTICS

TEST CIRCUITS