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SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 FEBRUARY 1996 ✪
FEATURES
* For AF drivers and output stages
* High collector current and Low V
CE(sat)
BCP69
C
COMPLEMENTARY TYPE BCP68
PARTMARKING DETAIL BCP69
BCP69 25
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature
Range
ELECTRICAL CHARACTERISTICS (at T
CBO
CEO
EBO
CM
C
tot
T
j:Tstg
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
EBO
V
CE(sat)
V
BE(on)
h
FE
BCP69
BCP69-25
Transition Frequency f
*Measured under pulsed conditions. Pulse width=300
For typical characteristics graphs see FMMT549 datasheet.
T
-25 V
-20 V IC=- 30mA
-5 V
-100
-10
-10
-0.5 V IC=-1A, IB=-100mA*
- 0.6
-1.0VV
50
63
160 250
400
400
100 MHz IC=-100mA, VCE=-5V,
µs. Duty cycle ≤2%
-25 V
-20 V
-5 V
-2 A
-1 A
2W
-55 to +150 °C
=-10µA
I
C
=-10µA
I
E
nA
µA
µA
V
CB
V
CB
V
EB
=-25V
=-25V, T
=-5V
amb
=150°C
IC=-5A, VCE=-10V*
=-1A, VCE=-1V*
I
C
I
=-5mA, VCE=-10V*
C
I
=-500mA, VCE=-1V*
C
=-500mA, VCE=-1V*
I
C
f=100MHz
E
C
3 - 20
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