Page 1
■ SILICON EPI TAX IA L PLANAR N PN
TRANSISTORS
■ MINIATURE PLA STI C PACKA G E FOR
APPLICAT ION IN SURFACE MOUNT ING
CIRCUITS
■ GENERAL PURPOSE MAINLY INTENDED
FOR USE IN MEDIUM PO W ER INDUS T RIA L
APPLICAT ION AND FOR AUDI O AMPLIF IER
OUTPUT STAGE
■ PNP COMPLEMENT S ARE B CP52 AND
BCP53 RESPECT I VE LY
BCP55/56
MEDIUM POWER AMPLIFIER
ADVANCE DATA
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
BCP55 BCP56
V
V
V
V
I
I
P
T
Collector-Base Voltage (IE = 0) 60 100 V
CBO
Collector-Emitter Voltage (IB = 0) 60 80 V
CEO
Collector-Emitter Voltage (RBE = 1KΩ)60100V
CER
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 1 A
I
C
Collector Peak Current (tp < 5 ms) 1.5 A
CM
Base Current 0.1 A
I
B
Base Peak Current (tp < ms) 0.2 A
BM
Total Dissipation at Tc = 25 oC2W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
October 1997
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BCP55/56
THERMAL DATA
R
R
• Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm
thj-amb
thj-tab
•
Thermal Resistance Junction-Ambient Max
•
Thermal Resistance Junction-Collecor Tab Max
62.5
8
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
V
(BR)CBO
V
(BR)CEO
V
(BR)CER
V
(BR)EBO
Collector Cut-off
Current (I
= 0)
E
Collector-Base
Breakdown Voltage
(I
= 0)
E
∗ Collector-Emitter
Breakdown Voltage
(I
= 0)
B
Collector-Emitter
Breakdown Voltage
(R
= 1 KΩ)
BE
Emitter-Base
= 30 V
V
CB
V
= 30 V Tj = 125 oC
CB
= 100 µA
I
C
for BCP55
for BCP56
I
= 20 mA
C
for BCP55
for BCP56
I
= 100 µA
C
for BCP55
for BCP56
= 10 µA 5 V
I
C
60
100
60
80
60
100
100
10
Breakdown Voltage
(I
= 0)
C
V
CE(sat)
∗ Collector-Emitter
IC = 500 mA IB = 50 mA 0.5 V
Saturation Voltage
∗ Base-Emitter On
V
BE(on)
IC = 500 mA VCE = 2 V 1 V
Voltage
∗ DC Current Gain IC = 5 mA VCE = 2 V
h
FE
f
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %
Transition Frequency IC = 10 mA VCE = 5 V f = 35 MHz 130 MHz
T
I
= 150 mA VCE = 2 V for Gr. 6
C
I
= 150 mA VCE = 2 V for Gr. 10
C
I
= 150 mA VCE = 2 V for Gr. 16
C
I
= 500 mA VCE = 2 V
C
25
40
63
100
25
100
160
250
nA
µA
V
V
V
V
V
V
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SOT-223 MECHANICAL DATA
BCP55/56
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
a 2.27 2.3 2.33 89.4 90.6 91.7
b 4.57 4.6 4.63 179.9 181.1 182.3
c 0.2 0.4 0.6 7.9 15.7 23.6
d 0.630.650.6724.825.626.4
e1 1.5 1.6 1.7 59.1 63 66.9
e4 0.32 12.6
f 2.9 3 3.1 114.2 118.1 122.1
g 0.67 0.7 0.73 26.4 27.6 28.7
l1 6.7 7 7.3 263.8 275.6 287.4
l2 3.5 3.5 3.7 137.8 137.8 145.7
L 6.3 6.5 6.7 248 255.9 263.8
mm mils
L
e1
a
b
f
C
l1
B
C
E
g
d
l2
c
e4
P008B
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Page 4
BCP55/56
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of pat e nts or ot her rights o f third partie s which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SG S-THOMSON Microelectroni cs. Specifications ment ioned
in this publication are subject to cha nge wi t hout n o tice. This p u bli ca t ion sup e rsed e s and r epla ces al l inf ormat i on pr ev io us ly supplied.
SGS-THOMSON Microelectronics products are not auth orized for use as critical components in life support devices or systems without express
written approval of SGS-THOM SO N M icroelecto nics.
© 1997 SGS-THOMSON Microelectronics - Printed in Ita ly - All Right s Rese rved
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
.
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