Page 1
NPN Silicon AF Transistors
• For AF driver and output stages
BCP 54 ... BCP 56
• High collector current
• Low collector-emitter saturation voltage
• Complementary types: BCP 51 ... BCP 53 (PNP)
4
1
Type Marking Pin Configuration Package
BCP 54
BCP 54-10
BCP 54-16
BCP 55
BCP 54
BCP 54-10
BCP 54-16
BCP 55
1 = B
1 = B
1 = B
1 = B
2 = C
2 = C
2 = C
2 = C
3 = E
3 = E
3 = E
3 = E
4 = C
4 = C
4 = C
4 = C
SOT-223
SOT-223
SOT-223
SOT-223
3
2
VPS05163
BCP 55-10
BCP 55-16
BCP 56
BCP 56-10
BCP 56-16
BCP 55-10
BCP 55-16
BCP 56
BCP 56-10
BCP 56-16
1 = B
1 = B
1 = B
1 = B
1 = B
2 = C
2 = C
2 = C
2 = C
2 = C
3 = E
3 = E
3 = E
3 = E
3 = E
4 = C
4 = C
4 = C
4 = C
4 = C
SOT-223
SOT-223
SOT-223
SOT-223
SOT-223
Oct-20-19991
Page 2
Maximum Ratings
g
BCP 54 ... BCP 56
Parameter
Collector-emitter voltage
Symbol BCP 54 BCP 55 BCP 56 Unit
V
Collector-emitter voltage RBE ≤ 1kΩ V
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
V
V
I
I
I
I
Total power dissipation, TS = 124 °C P
Junction temperature
Storage temperature
T
T
Thermal Resistance
Junction ambient
Junction - soldering point
1)
R
R
CEO
CER
CBO
EBO
C
CM
B
BM
tot
j
st
thJA
thJS
45 60 80 V
45 60 100
45 60 100
5 5 5
1 A
1.5
100 mA
200
1.5 W
150 °C
-65 ... 150
≤72
K/W
≤17
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Oct-20-19992
Page 3
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BCP 54 ... BCP 56
Parameter
DC Characteristics
Collector-emitter breakdown voltage
= 10 mA, IB = 0
I
C
Collector-base breakdown voltage
= 100 µA, IB = 0
I
C
Emitter-base breakdown voltage
= 10 µA, IC = 0
I
E
Collector cutoff current
= 30 V, IE = 0
V
CB
BCP 54
BCP 55
BCP 56
BCP 54
BCP 55
BCP 56
Symbol UnitValues
typ. max.min.
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
45
60
80
45
60
100
5 -
- - 100 nA
-
-
-
-
-
-
-
V
-
-
-
-
-
-
Collector cutoff current
= 30 V, IE = 0 , TA = 150 °C
V
CB
DC current gain 1)
= 5 mA, VCE = 2 V
I
C
DC current gain 1)
= 150 mA, VCE = 2 V
I
C
DC current gain 1)
= 500 mA, VCE = 2 V
I
C
Collector-emitter saturation voltage1)
= 500 mA, IB = 50 mA
I
C
Base-emitter voltage 1)
= 500 mA, VCE = 2 V
I
C
AC Characteristics
BCP54...56
hFE-grp. 10
hFE-grp. 16
I
CBO
h
FE
h
FE
h
FE
V
CEsat
V
BE(ON)
- - 20 µA
25 - - -
40
63
100
-
100
160
250
160
250
25 - -
- - 0.5 V
- - 1
Transition frequency
= 50 mA, VCE = 10 V, f = 100 MHz
I
C
1) Pulse test: t ≤ 300µs, D = 2%
f
T
- 100 - MHz
Oct-20-19993
Page 4
BCP 54 ... BCP 56
Total power dissipation P
tot
* Package mounted on epoxy
BCP 54...56 EHP00266
1.6
W
1.4
P
tot
1.2
1.0
0.8
0.6
0.4
0.2
0
0 50 100 150
= f (TA*;TS)
T
A
˚C
T T;
AS
Transition frequency f
V
= 10V
CE
3
10
MHz
f
T
5
2
10
T
S
5
1
10
03
10
10
55
1
= f (IC)
T
10
EHP00267BCP 54...56
2
10mA
Ι
C
DC current gain h
V
= 2V
CE
3
10
5
h
FE
C
100
25
10
0
-50
C
C
1
10
10
10
10
2
5
1
5
0
= f (IC)
FE
10
Collector cutoff current I
V
= 30V
CB
EHP00268BCP 54...56
10
4
CBO
= f (TA)
EHP00269BCP 54...56
nA
Ι
CBO
2
3
10 mA
Ι
C
10
4
10
10
10
10
10
3
2
1
0
-1
0
50 100
max
typ
T
150
C
A
Oct-20-19994
Page 5
BCP 54 ... BCP 56
Base-emitter saturation voltage
I
= f (V
C
Ι
C
10
mA
10
10
10
10
4
3
2
1
0
BEsat
0
), hFE = 10
100
-50
0.4 0.6 0.8 1.2V
0.2
25
C
C
C
V
EHP00270BCP 54...56
BEsat
Collector-emitter saturation voltage
I
= f (V
C
Ι
C
10
mA
10
10
10
10
4
3
2
1
0
CEsat
0
), hFE = 10
C
100
C
25
C
-50
0.2 0.6
0.4 V 0.8
V
CEsat
EHP00271BCP 54...56
Permissible pulse load
P
P
totmax
tot max
totPDC
10
10
10
/ P
5
2
5
1
5
0
10
totDC
-6 -5
10
= f (tp)
D
-4
10
=
D
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t
p
t
p
T
=
10-310
EHP00272BCP 54...56
T
-2
t
p
0
10s
Oct-20-19995
Loading...