Page 1
®
LOW POWER PNP TRANSISTOR
Ordering Code Marking
BCP52-16 BCP5216
■ SILICON EPI TAX IA L PLANAR PN P MEDIUM
VOLTAGE TRANSISTOR
■ SOT-223 PLASTIC PAC KA GE FOR
SURFACE MOUNTING CIRCUITS
■ TAPE A ND REEL PACKING
■ THE NPN COMP L E ME NT ARY TYPE IS
BCP55-16
BCP52-16
2
3
2
1
APPLICATIONS
■ MEDIUM VOLTAGE LOAD SWITCH
SOT-223
TRANSISTORS
■ OUTPUT STAGE FOR AUDIO AMPLIFIERS
CIRCUITS
■ AUTOMOTIVE POST-VOLTAGE
REGULATION
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
V
I
I
P
T
Collector-Base Voltage (IE = 0) -60 V
CBO
Collector-Emitter Voltage (IB = 0) -60 V
CEO
Collector-Emitter Voltage (RBE = 1KΩ)
CER
Emitter-Base Voltage (IC = 0) -5 V
EBO
Collector Current -1 A
I
C
Collector Peak Current (tp < 5 ms) -1.5 A
CM
Base Current -0.1 A
I
B
Base Peak Current (tp < 5 ms) -0.2 A
BM
Total Dissipation at T
tot
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
= 25 oC 1.4 W
amb
-60 V
o
C
o
C
September 2003
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Page 2
BCP52-16
THERMAL DATA
R
• Device mounted on a PCB area of 1 cm
• Thermal Resistance Junction-Ambient Max 89.3
thj-amb
o
2
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
V
(BR)CBO
Collector Cut-off
Current (I
= 0)
E
Collector-Base
= -30 V
V
CB
V
= -30 V Tj = 125 oC
CB
= -100 µA
I
C
-100
-10
-60 V
Breakdown Voltage
(I
= 0)
E
V
(BR)CEO
∗ Collector-Emitter
I
= -20 mA -60 V
C
Breakdown Voltage
(I
= 0)
B
V
(BR)CER
Collector-Emitter
I
= -100 µA
C
-60 V
Breakdown Voltage
(RBE = 1 KΩ)
V
(BR)EBO
Emitter-Base
= -10 µA
I
E
-5 V
Breakdown Voltage
(I
= 0)
C
V
CE(sat)
∗ Collector-Emitter
IC = -500 mA IB = -50 mA -0.5 V
Saturation Voltage
∗ Base-Emitter On
V
BE(on)
IC = -500 mA VCE = -2 V -1 V
Voltage
∗ DC Current Gain IC = -5 mA VCE = -2 V
h
FE
f
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %
Transition Frequency IC = -10 mA VCE = -5 V f = 20 MHz 50 MHz
T
I
= -150 mA VCE = -2 V
C
I
= -500 mA VCE = -2 V
C
40
100
25
250
nA
µA
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Page 3
SOT-223 MECHANICAL DATA
BCP52-16
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.80 0.071
B 0.60 0.70 0.80 0.024 0.027 0.031
B1 2.90 3.00 3.10 0.114 0.118 0.122
c 0.24 0.26 0.32 0.009 0.010 0.013
D 6.30 6.50 6.70 0.248 0.256 0.264
e 2.30 0.090
e1 4.60 0.181
E 3.30 3.50 3.70 0.130 0.138 0.146
H 6.70 7.00 7.30 0.264 0.276 0.287
V10
A1 0.02
mm inch
o
10
o
P008B
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Page 4
BCP52-16
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics.
All other names are the property of their respective owners.
© 2003 STMicroelectronics – All Rights reserved
STMicroelectronics GROUP OF COMPANIES
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