Datasheet BC860, BC859 Datasheet (Fairchild Semiconductor)

Page 1
BC856/857/858/859/860
Switching and Amplifier Applications
• Suitable for automatic insertion in thick and thin-film circuits
• Low Noise: BC859, BC860
• Complement to BC846 ... BC850
PNP Epitaxial Silicon Transistor
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
BC856/857/858/859/860
Absolute Maximum Ratings
Ta=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage
: BC856 : BC857/860 : BC858/859
-80
-50
-30
Collector-Emitter Voltage
: BC856 : BC857/860 : BC858/859
-65
-45
-30 Emitter-Base Voltage -5 V Collector Current (DC) -100 mA Collector Power Dissipation 310 mW Junction Temperature 150 °C Storage Temperature -65 ~ 150 °C
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA
V
CE
(sat) Base-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA
V
BE
(on) Base-Emitter On Voltage VCE= -5V, IC= -2mA
V
BE
f
T
Collector Cut-off Current VCB= -30V , IE=0 -15 nA DC Current Gain VCE= -5V, IC= -2mA 110 800
I
= -100mA, IB= -5mA
C
-90
-250
-300
-650
-700
= -100mA, IB= -5mA
I
C
-900
-600 -660 -750
= -5V, IC= -10mA
V
CE
Current Gain Bandwidth Product VCE= -5V, IC= -10mA
150 MHz
-800
f=100MHz
C
ob
NF Noise Figure
Output Capacitance VCB= -10V , IE=0, f=1MHz 6 pF
: BC856/857/858 : BC859/860 : BC859 : BC860
VCE= -5V, IC= -200µA f=1KHz, R V
CE
R
=2KΩ, f=30~15000Hz
G
=2K
G
= -5V, IC= -200µA
2 1
1.2
1.2
10
4 4 2
V V V
V V V
mV mV
mV mV
mV mV
dB dB dB dB
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
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hFE Classification
Classification A B C
h
FE
110 ~ 220 200 ~ 450 420 ~ 800
Marking Code
Type 856A 856B 856C 857A 857B 857C 858A 858B 858C Mark 9AA 9AB 9AC 9BA 9BB 9BC 9CA 9CB 9CC
Type 859A 859B 859C 860A 860B 860C Mark 9DA 9DB 9DC 9EA 9EB 9EC
BC856/857/858/859/860
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
Page 3
Typical Characteristics
BC856/857/858/859/860
-50
-45
-40
-35
-30
-25
-20
-15
[mA], COLLECTOR CURRENT
-10
C
I
-5
-0
-0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20
IB = - 400µA
IB = - 350µA
IB = - 300µA
IB = - 250µA
VCE[V], COLLEC TOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-0.1 -1 -10 -100
VBE(sat)
VCE(sat)
IC[mA], COLLECTOR CURRENT
IB = - 200µA
IB = - 150µA
IB = - 100µA
IB = - 50µA
IC = 10 I
1000
VCE = - 5V
100
, DC CURRENT GAIN
FE
h
10
-0.1 -1 -10 -100
IC[mA], COLLECTOR CURRENT
-100
B
-10
-1
[mA], COLLECTOR CURRENT
C
I
-0.1
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
VCE = - 5V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
f=1MHz IE=0
10
[pF], CAPACITANCE
ob
C
1
-1 -10 -100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Figure 4. Base-Emitter On Voltage
1000
f=1MHz IE=0
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
T
f
100
10
-1 -10
IC[mA], COLLECTOR CURRENT
Rev. A2, August 2002
Page 4
Package Dimensions
0.40
±0.03
BC856/857/858/859/860
SOT-23
0.20 MIN
0.45~0.60
0.95
2.90
±0.03
1.90
±0.10
0.95
±0.03
±0.03
±0.10
0.40
±0.03
0.97REF 1.30
0.508REF
±0.10
2.40
0.96~1.14
0.03~0.10
0.38 REF
+0.05
0.12
–0.023
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
Page 5
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™
2
CMOS™
E EnSigna™
FACT™ FACT Quiet series™
®
FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™
2
C™
I Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™
ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC
®
OPTOPLANAR™
PACMAN™ POP™ Power247™ PowerTrench
®
QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER SMART START™
SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET
®
VCX™
®
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation Rev. I1
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Semiconductor reserves the right to make changes at any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
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