Page 1
General Purpose Transistors
PNP Silicon
These transistors are designed for general purpose
amplifier applications. They are housed in the SOT–323/
SC–70 which is designed for low power surface mount
applications.
MAXIMUM RATINGS
Rating Symbol BC856 BC857 BC858 Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
CEO
CBO
EBO
C
–65 –45 –30 V
–80 –50 –30 V
–5.0 –5.0 –5.0 V
–100 –100 –100 mAdc
1
BASE
LESHAN RADIO COMPANY, LTD.
BC856AWT1, BWT1
3
COLLECTOR
BC857AWT1, BWT1
BC858AWT1, BWT1
CWT1
2
EMITTER
1
2
CASE 419–02, STYLE 3
SOT– 323 / SC-70
3
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature T J , T
P
D
θJA
stg
150 mW
833 °C/W
–55 to +150 °C
DEVICE MARKING
BC856AWT1 = 3A; BC856BWT1 = 3B; BC857AWT1 = 3E; BC857BWT1 = 3F;
BC858AWT1 = 3J; BC858BWT1 = 3K; BC858CWT1 = 3L
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mA) BC857 Series V
Collector–Emitter Breakdown Voltage
(IC = –10 µA, VEB = 0) BC857 Series V
Collector–Base Breakdown Voltage BC856 Series – 80 — —
(IC = – 10 µA) BC857 Series V
Emitter–Base Breakdown Voltage BC856 Series – 5.0 — —
(IE = – 1.0 µA) BC857 Series, V
Collector Cutoff Current (VCB = – 30 V)
(VCB = – 30 V , TA = 150°C) — — – 4.0 µA
BC856 Series – 65 — —
(BR)CEO
– 45 — — v
BC858 Series – 30 — —
BC856 Series – 80 — —
(BR)CES
– 50 — — v
BC858 Series – 30 — —
(BR)CBO
– 50 — — v
BC858 Series – 30 — —
(BR)EBO
– 5.0 — — v
BC858 Series – 5.0 — —
I
CBO
— — – 15 nA
1.FR–5=1.0 x 0.75 x 0.062in
K5–1/5
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LESHAN RADIO COMPANY, LTD.
BC856AWT1, BWT1 BC857AWT1, BWT1 BC858AWT1, BWT1, CWT1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Continued)
A
Characteristic Symbol Min T y p Max Unit
ON CHARACTERISTICS
DC Current Gain
(I C = –10 µA, V CE = –5.0 V) BC856B, BC857B, BC858B
(I C = –2.0 mA, V CE = –5.0 V) BC856A, BC857A, BC858A
Collector–Emitter Saturation Voltage (I C = –10 mA, I B = – 0.5 mA)
Collector–Emitter Saturation Voltage (I C = –100 mA, I
Base–Emitter Saturation Voltage (I C = –10 mA, I B = –0.5 mA)
Base–Emitter Saturation Voltage (I C = –100 mA, I B = –5.0 mA) — – 0.9 —
Base–Emitter Voltage (I C = –2.0 mA, V
Base–Emitter Voltage (I
BC856A, BC857A, BC858A
BC858C,
BC856B, BC857B, BC858B
BC858C
= –5.0 V)
CE
= –10 mA, V
C
= –5.0 V) — — – 0.82
CE
h
FE
—90——
— 150 —
— 270 —
125 180 250
220 290 475
420 520 800
V
V
V
CE(sat)
BE(sat)
BE(on)
= – 5.0 mA) — — – 0.65
B
— — – 0.3
— – 0.7 —
– 0.6 — – 0.75
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I C = – 10 mA, V
= – 5.0 Vdc, f = 100 MHz)
CE
Output Capacitance (V CB = – 10 V, f = 1.0 MHz) C
Noise Figure
(I C= – 0.2 mA,V
= – 5.0 Vdc, R S= 2.0 kΩ, f =1.0 kHz, BW= 200 Hz)
CE
f
T
ob
100 — — MHz
— — 4.5 pF
NF –– –– 10 dB
V
V
V
K5–2/5
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LESHAN RADIO COMPANY, LTD.
BC856AWT1, BWT1 BC857AWT1, BWT1, BC858AWT1, BWT1, CWT1
BC857/BC858
2.0
VCE= –10 V
1.5
T
= 25°C
A
1.0
0.7
0.5
0.3
, NORMALIZED DC CURRENT GAIN
FE
h
0.2
–0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200
I C , COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
–2.0
= 25°C
T
A
–1.6
–1.2
20 mA
I C= –50 mA
I C= –200 mA
I C= –100 mA
–0.8
–0.4
, COLLECTOR– EMITTER VOLTAGE (V)
CE
0
V
I C =
–10 mA
I C= –
–1.0
T A = 25°C
–0.9
–0.8
–0.7
–0.6
–0.5
–0.4
–0.3
V, VOLTAGE (VOLTS)
–0.2
–0.1
0
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100
, COLLECTOR CURRENT (mAdc)
I
C
V
V
V
BE(sat)
BE(on)
CE(sat)
@ I
=10
C /I B
@ V
= –10 V
CE
@ I C /I B = 10
Figure 2. “Saturation” and “On” Voltages
1.0
–55°C to +125°C
1.2
1.6
2.0
2.4
2.8
, TEMPERATURE COEFFICIENT (mV/ °C)
VB
θθ
θθ
θ
–0.2 –1.0 –10 –100–0.02 –0.1 –1.0 –10 –20
I B , BASE CURRENT (mA)
Figure 3. Collector Saturation Region
10.0
C
7.0
ib
T A=25°C
5.0
C
3.0
2.0
ob
C, CAPACITANCE(pF)
1.0
–0.4 –0.6 –1.0 –2.0 –4.0 –6.0 –10 –20 –30 –40 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 –50
400
300
200
150
100
80
60
PRODUCT (MHz)
40
30
, CURRENT– GAIN – BANDWIDTH
T
f
20
V R , REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
Figure 6. Current–Gain – Bandwidth Product
I C , COLLECTOR CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
V
= –10V
CE
T A = 25°C
I C , COLLECTOR CURRENT (mAdc)
K5–3/5
Page 4
BC856AWT1, BWT1 BC857AWT1, BWT1, BC858AWT1, BWT1, CWT1
BC856
V
= –5.0V
CE
T A = 25°C
2.0
1.0
0.5
0.2
, DC CURRENT GAIN (NORMALIZED)
FE
h
–0.1–0.2 –1.0 –2.0 –5.0–10 –20 –50 –100–200
I C , COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
LESHAN RADIO COMPANY, LTD.
–1.0
T J= 25°C
V, VOLTAGE (VOLTS)
–0.8
–0.6
–0.4
–0.2
0
V
@ I C/I B=10
BE(sat)
VBE @VCE= –5.0 V
V
@ I C /I B= 10
CE(sat)
–0.2 –0.5 –1.0 –2.0 –5.0 –10 –2 0 –50 –100 –200
I C , COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
–2.0
–1.6
–100mA
–1.2
I C =
–10mA
–20mA
–50mA
–0.8
–0.4
TJ= 25°C
0
–0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20
, COLLECTOR– EMITTER VOL TAGE (VOLTS)
CE
V
I
, BASE CURRENT (mA)
B
Figure 9. Collector Saturation Region
40
20
10
C
ib
T J= 25°C
–200mA
–1.0
–1.4
–1.8
θ VB for V
BE
–55°C to 125°C
–2.2
–2.6
–3.0
–0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200
, TEMPERATURE COEFFICIENT (mV/°C)
VB
θθ
θθ
θ
I
, COLLECTOR CURRENT (mA)
C
Figure 10. Base–Emitter Temperature Coefficient
VCE= –5.0V
500
200
100
6.0
C, CAPACITANCE (pF)
4.0
C
ob
50
20
2.0
–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –1.0 –10 –100
V R , REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
, CURRENT– GAIN – BANDWIDTH PRODUCT T
T
f
I C , COLLECTOR CURRENT (mA)
Figure 12. Current–Gain – Bandwidth Product
K5–4/5
Page 5
1.0
0.7
D=0.5
0.5
0.2
0.3
0.2
0.1
0.05
0.1
0.07
0.05
0.03
r( t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
0.02
0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k
LESHAN RADIO COMPANY, LTD.
BC856AWT1, BWT1 BC857AWT1, BWT1, BC858AWT1, BWT1, CWT1
SINGLE PULSE
SINGLE PULSE
P
(pk)
t
1
t
DUTY CYCLE, D = t 1 /t
t, TIME (ms)
Figure 13. Thermal Response
2
Z
(t) = r(t) R
θJC
R
= 83.3°C/W MAX
θJC
Z
(t) = r(t) R
θJA
R
= 200°C/W MAX
θJA
D CURVES APPL Y FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
2
– T C = P
J(pk)
θJC
θJA
1
(pk) R θJC
(t)
–200
3 ms1s
–100
–50
–10
–5.0
, COLLECTOR CURRENT (mA)
–2.0
C
I
TA= 25°C
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
TJ= 25°C
BC558
BC557
BC556
–1.0 –0.5 –10 –30 –45 –65 –100
V CE , COLLECTOR–EMITTER VOL TAGE (V)
Figure 14. Active Region Safe Operating Area
The safe operating area curves indicate I C –V CE limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated by
the applicable curve.
The data of Figure 14 is based upon T
= 150°C; T C or T
J(pk)
is variable depending upon conditions. Pulse curves are valid for
duty cycles to 10% provided T
< 150°C. T
J(pk)
may be calcu-
J(pk)
lated from the data in Figure 13. At high case or ambient
temperatures, thermal limitations will reduce the power that can
be handled to values less than the limitations imposed by the secondary breakdown.
A
K5–5/5
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