Datasheet BC858CF, BC857BF, BC858AF, BC857CF, BC858BF Datasheet (Philips)

DATA SH EET

Preliminary specification
Supersedes data of 1998 Nov 10

1999 May 21

DISCRETE SEMICONDUCTORS

BC856F; BC857F; BC858F series

PNP general purpose transistors

M3D425

1999 May 21 2

Philips Semiconductors Preliminary specification

PNP general purpose transistors BC856F; BC857F; BC858F series

FEATURES

• Power dissipation comparable to SOT23

• Low current (max. 100 mA)

• Low voltage (max. 65 V).

APPLICATIONS

• General purpose switching and amplification especially
in portable equipment.

DESCRIPTION

PNP transistor encapsulated in an ultra small SC-89
(SOT490) plastic SMD package.
NPN complements: BC846F, BC847F and BC848F series.

PINNING

PIN DESCRIPTION

1 base
2 emitter
3 collector

Fig.1 Simplified outline (SC-89; SOT490) and

symbol.

handbook, halfpage

MAM411

1

2

3

12

Top view

3

MARKING

TYPE

NUMBER

MARKING

CODE

TYPE

NUMBER

MARKING

CODE

BC856AF 3A BC857CF 3G
BC856BF 3B BC858AF 3J
BC857AF 3E BC858BF 3K
BC857BF 3F BC858CF 3L

1999 May 21 3

Philips Semiconductors Preliminary specification

PNP general purpose transistors BC856F; BC857F; BC858F series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

collector-base voltage open emitter

BC856AF; BC856BF −−80 V
BC857AF; BC857BF; BC857CF −−50 V
BC858AF; BC858BF; BC858CF −−30 V

V

CEO

collector-emitter voltage open base

BC856AF; BC856BF −−65
BC857AF; BC857BF; BC857CF −−45
BC858AF; BC858BF; BC858CF −−30

V

EBO

emitter-base voltage open collector −−5V

I

C

collector current (DC) −−100 mA

I

CM

peak collector current −−200 mA

I

BM

peak base current −−100 mA

P

tot

total power dissipation T

amb

≤ 25 °C; note 1 − 250 mW

T

stg

storage temperature −65 +150 °C

T

j

junction temperature − 150 °C

T

amb

operating ambient temperature −65 +150 °C

1999 May 21 4

Philips Semiconductors Preliminary specification

PNP general purpose transistors BC856F; BC857F; BC858F series

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

T

amb

=25°C unless otherwise specified.

Note

1. Pulse test: t

p

≤ 300 µs; δ≤0.02.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to ambient in free air; note 1 500 K/W

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

CBO

collector cut-off current IE= 0; VCB= −30 V −−15 nA

I

E

= 0; VCB= −30 V; Tj= 150 °C −−5µA

I

EBO

emitter cut-off current IC= 0; VEB= −5V −−100 nA

h

FE

DC current gain IC= −2 mA; VCE= −5V

BC856AF; BC857AF; BC858AF 125 250
BC856BF; BC857BF; BC858BF 220 475
BC857CF; BC858CF 420 800

V

CEsat

collector-emitter saturation voltage IC= −10 mA; IB= −0.5 mA −−200 mV

I

C

= −100 mA; IB= −5 mA; note 1 −−400 mV

V

BE

base-emitter voltage IC= −2 mA; VCE= −5V −600 −750 mV

I

C

= −10 mA; VCE= −5V −−820 mV

C

c

collector capacitance IE=ie= 0; VCB= −10 V; f = 1 MHz − 2.5 pF

f

T

transition frequency IC= −10 mA; VCE= −5 V; f = 100 MHz 100 − MHz

F noise figure I

C

= −200 µA; VCE= −5 V; RS=2kΩ;

f = 1 kHz; B = 220 Hz

− 10 dB

1999 May 21 5

Philips Semiconductors Preliminary specification

PNP general purpose transistors BC856F; BC857F; BC858F series

PACKAGE OUTLINE

UNIT b

p

cD

E

e

1

H

E

L

p

wv

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

98-10-23

IEC JEDEC EIAJ

mm

0.33

0.23

0.2

0.1

1.7

1.5

0.95

0.75

0.5

e

1.0

1.7

1.5

0.1

0.1

DIMENSIONS (mm are the original dimensions)

0.5

0.3

SOT490 SC-89

b

p

D

e

1

e

A

L

p

detail X

H

E

E

w M

v M

A

B

AB

0 1 2 mm

scale

A

0.8

0.6

c

X

12

3

Plastic surface mounted package; 3 leads SOT490

1999 May 21 6

Philips Semiconductors Preliminary specification

PNP general purpose transistors BC856F; BC857F; BC858F series

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

1999 May 21 7

Philips Semiconductors Preliminary specification

PNP general purpose transistors BC856F; BC857F; BC858F series

NOTES

© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
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Internet: http://www.semiconductors.philips.com

1999 65

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Printed in The Netherlands 115002/00/02/pp8 Date of release: 1999 May 21 Document order number: 9397 750 05848