Datasheet BC857BDW1T1, BC857CDW1T1, BC858BDW1T1, BC856BDW1T1 Datasheet (LRC)

LESHAN RADIO COMPANY, LTD.

Dual General Purpose Transistors

PNP Duals

These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.

6

Q

2

1

MAXIMUM RATINGS

Rating Symbol BC856 BC857 BC858 Unit

Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current -Continuous I

5

2

4

Q

1

3

CEO

CBO

EBO

C

See Table

–65 –45 –30 V
–80 –50 –30 V

–5.0 –5.0 –5.0 V

–100 –100 –100 mAdc

BC856BDW1T1
BC857BDW1T1
BC857CDW1T1
BC858BDW1T1
BC858CDW1T1

6

5

1

2

3

SOT–363/SC–88

CASE 419B STYLE 1

4

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

T otal Device Dissipation P
Per Device 250 mW
FR– 5 Board, (1) TA = 25°C
Derate above 25°C 3.0 mW/°C
Thermal Resistance, Junction to Ambient R
Junction and Storage Temperature T J , T

1. FR–5 = 1.0 x 0.75 x 0.062 in.

D

θJA

stg

380 mW

328 °C/W

–55 to +150 °C

ORDERING INFORMATION

Device Package Shipping

BC856BDW1T1 SOT–363 3000 Units/ Reel
BC857BDW1T1 SOT–363 3000 Units/ Reel
BC857CDW1T1 SOT–363 3000 U nits/R eel
BC858BDW1T1 SOT–363 3000 Units/ Reel
BC858CDW1T1 SOT–363 3000 U nits/R eel

BC856b–1/5

LESHAN RADIO COMPANY, LTD.

BC856BDW1T1, BC857BDW1T1, BC857CDW1T1, BC858BDW1T1, BC858CDW1T1

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic Symbol M in Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage V
(I C = –10 mA) BC856 Series –65 — —

BC857 Series –45 — —

BC858 Series –30 — —
Collector–Emitter Breakdown Voltage V
(I C = –10 µA, V

= 0) BC856 Series –80 — —

EB

BC857 Series –50 — —

BC858 Series –30 — —
Collector–Base Breakdown Voltage V
(I C = –10 µA) BC856 Series –80 — —

BC857 Series –50 — —

BC858 Series –30 — —
Emitter–Base Breakdown Voltage V
(I E = –1.0 µA) BC856 Series –5.0 — —

BC857 Series –5.0 — —

BC858 Series –5.0 — —
Collector Cutoff Current (V

= –30 V) I

CB

(V

= –30 V, T A = 150°C) — — –4.0 µA

CB

(BR)CEO

(BR)CES

(BR)CBO

(BR)EBO

CBO

— — –15 nA

ON CHARACTERISTICS

DC Current Gain h
(I C = –10 µA, V

= –5.0 V) BC856B, BC857B, BC858B — 150 —

CE

BC857C, BC858C — 270 —

FE

V

V

V

V

—

(I C = –2.0 mA, V

=– 5.0 V) BC856B, BC857B, BC858B 220 290 475

CE

BC857C, BC858C 420 520 800
Collector–Emitter Saturation Voltage (I C = -10 mA, I B = -0.5 mA) V

CE(sat)

— — –0.3 V

Collector–Emitter Saturation Voltage ( I C = -100 mA, I B = -5.0 mA) — — –0.65

Base–Emitter Saturation Voltage (I C = –10 mA, I B = –0.5 mA) V

BE(sat)

— –0.7 — V

Base–Emitter Saturation Voltage (I C = –100 mA, I B = –5.0 mA) — –0.9 —

Base–Emitter Voltage (I C = –2.0 mA, V

Base–Emitter Voltage (I C = –10 mA, V

= –5.0 V) V

CE

= –5.0 V) — — –0.82

CE

BE(on)

–0.6 –– –0.75 V

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product f
(I C = –10 mA, V
Output Capacitance (V

= –5.0 Vdc, f = 100 MHz)

CE

= –10 V, f = 1.0 MHz) C

CB

T

obo

Noise Figure (I C = –0.2 mA, NF dB
V

= –5.0 V dc, R S = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) — — 10

CE

100 — — MHz

— — 4.5 pF

BC856b–2/5

LESHAN RADIO COMPANY, LTD.

BC856BDW1T1, BC857BDW1T1, BC857CDW1T1

BC858BDW1T1, BC858CDW1T1

TYPICAL PNP CHARACTERISTICS — BC856

-1.0

-0.8

2.0

1.0

0.5

0.2

, DC CURRENT GAIN (NORMALIZED)

FE

-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200

I C , COLLECTOR CURRENT (AMP)

Figure 1. DC Current Gain

-2.0

-1.6

-1.2

-0.8

-0.4

-0.6

-0.4

-0.2

V, VOLTAGE (VOLTS)

0

-0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200

I C , COLLECTOR CURRENT (mA)

Figure 2. “On” Voltage

-1.0

-1.4

-1.8

-2.2

-2.6

0

-0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20

, COLLECTOR– EMITTER VOLTAGE (VOLTS) h

CE

V

C, CAPACITANCE (pF)

Figure 3. Collector Saturation Region

40

20

10

0.8

6.0

4.0

2.0

-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100

I B , BASE CURRENT (mA)

V R , REVERSE VOLTAGE (VOLTS)

Figure 5. Capacitance

-3.0

, TEMPERATURE COEFFICIENT (mV/°C)

-0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200

VB

θ

I C , COLLECTOR CURRENT (mA)

Figure 4. Base–Emitter Temperature Coefficient

500

200

100

50

20

-1.0 -10 -100

, CURRENT-GAIN-BANDWIDTH PRODUCT(MHz)

T

Figure 6. Current–Gain – Bandwidth Product

f

I C , COLLECTOR CURRENT (mA)

BC856b–3/5

LESHAN RADIO COMPANY, LTD.

BC856BDW1T1, BC857BDW1T1, BC857CDW1T1

BC858BDW1T1, BC858CDW1T1

TYPICAL PNP CHARACTERISTICS — BC857/BC858

2.0

1.5

1.0

0.7

0.5

0.3

0.2

, DC CURRENT GAIN (NORMALIZED)

FE

-0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200

I C , COLLECTOR CURRENT (mAdc)

Figure 7. Normalized DC Current Gain

-2.0

-1.6

-1.2

-0.8

-1.0

-0.8

-0.6

-0.4

-0.2

V, VOLTAGE (VOLTS)

0

-1.0 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100

I C , COLLECTOR CURRENT (mAdc)

Figure 8. “Saturation” and “On” Voltages

-1.0

-1.4

-1.8

-2.2

-0.4

0

, COLLECTOR-EMITTER VOLTAGE (VOLTS) h
V

-0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20

CE

I B , BASE CURRENT (mA)

Figure 9. Collector Saturation Region

10

7.0

5.0

3.0

2.0

C, CAPACITANCE (pF)

1.0

-0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40

V R , REVERSE VOLTAGE (VOLTS)

Figure 11. Capacitance

-2.6

-3.0

, TEMPERATURE COEFFICIENT (mV/°C)

VB

θ

-0.2 -0.5 -1.0 -10 -100

I C , COLLECTOR CURRENT (mA)

Figure 10. Base–Emitter Temperature Coefficient

400

300

200
150

100

80
60

40
30

20

-0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50

, CURRENT-GAIN-BANDWIDTH PRODUCT(MHz)

T

f

Figure 12. Current-Gain-Bandwidth Product

I C , COLLECTOR CURRENT (mA)

BC856b–4/5

LESHAN RADIO COMPANY, LTD.

BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1

1.0
D=0.5

0.2

0.1

0.1

0.05

0.02

0.01

0.01

r(t), TRANSIENT THERMAL

RESISTANCE (NORMALIZED)

0.001

SINGLE PULSE

0 1.0 10 100 1.0K 10K 100K 1.0M

P

(pk)

t

1

t

2

DUTY CYCLE, D = t 1 /t

2

t, TIME (ms)

Figure 13. Thermal Response

-200

The safe operating area curves indicate I C –V

-100

thetransistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the

-50

limits indicated by the applicable curve.
The data of Figure 14 is based upon T
T A is variable depending upon conditions. Pulse curves are

-10

valid for duty cycles to 10% provided T
(pk) may be calculated from the data in Figure 13. At high

-5.0

, COLLECTOR CURRENT (mA)

C

I

-2.0

-1.0 -5.0 -10 -30 -45 -65 -100

V

, COLLECTOR–EMITTER VOLTAGE (V)

CE

case or ambient temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita­tions imposed by the secondary breakdown.

Figure 14. Active Region Safe Operating Area

Z

(t) = r(t) R

θJA

R

θJA

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T

J(pk)

θJA

= 328°C/W MAX

– T C = P

1

R

(pk)

= 150°C; T C or

J(pk)

< 150°C. T

J(pk)

θJC

CE

(t)

limits of

J

BC856b–5/5