Page 1
PNP Silicon AF Transistors BC 856W ... BC 860W
Features
● For AF input stages and driver applications
● High current gain
● Low collector-emitter saturation voltage
● Low noise between 30 Hz and 15 kHz
● Complementary types: BC 847W, BC 848W,
BC 849W, BC 850W (NPN)
Type Marking
BC 856 AW
BC 856 BW
BC 857 AW
BC 857 BW
BC 857 CW
BC 858 AW
BC 858 BW
BC 858 CW
BC 859 AW
BC 859 BW
BC 859 CW
BC 860 BW
BC 860 CW
3As
3Bs
3Es
3Fs
3Gs
3Js
3Ks
3Ls
4As
4Bs
4Cs
4Fs
4Gs
Ordering Code
(tape and reel)
Q62702-C2335
Q62702-C2292
Q62702-C2293
Q62702-C2294
Q62702-C2295
Q62702-C2296
Q62702-C2297
Q62702-C2298
Q62702-C2299
Q62702-C2300
Q62702-C2301
Q62702-C2302
Q62702-C2303
Pin Configuration
1 2 3
B E C
Package
SOT-323
1)
1)
For detailed information see chapter Package Outlines.
Semiconductor Group 1 04.96
Page 2
Maximum Ratings
BC 856W ... BC 860W
Description Symbol Unit
Collector-emitter voltage V
CEO V
Collector-base voltage VCBO V
Collector-emitter voltage VCES V
Emitter-base voltage V
Collector current I
EBO V
C mA
Collector peak current ICM mA
tot mW
Total power dissipation, T
S =115 ˚C
Junction temperature T
Storage temperature range T
P
j ˚C
stg –65 to 150 ˚C
BC 856W BC 857W
BC 860W
BC 858W
BC 859W
65 45 30
80 50 30
80 50 30
555
100
200
250
150
Thermal Resistance
Junction - ambient
1)
Rth JA ≤ 240 K/W
Junction - soldering point Rth JS ≤ 105 K/W
Semiconductor Group 2
Page 3
Electrical Characteristics
I
I
I
I
I
I
I
I
I
I
I
I
1)
A = 25 ˚C, unless otherwise specified.
at T
DC characteristics
BC 856W ... BC 860W
UnitValuesParameter Symbol
min. typ. max.
(BR)CE0
V
C = 10 mA BC 856W
BC 857W, BC 860W
BC 858W, BC 859W
Collector-base breakdown voltage
C = 10 µA BC 856W
BC 857W, BC 860W
(BR)CB0
V
BC 858W, BC 859W
Collector-emitter breakdown voltage
C = 10 µA, VBE = 0 BC 856W
BC 857W, BC 860W
(BR)CES
V
BC 858W, BC 859W
V
Emitter-base breakdown voltage
E = 1 µA
(BR)EB0 5––
65
45
30
80
50
30
80
50
30
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
VCollector-emitter breakdown voltage
Collector cutoff current
CB = 30 V
V
CB = 30 V, TA = 150 ˚C
V
C = 10 µA, VCE = 5 V
BC 856 AW … BC 859 AW
BC 856 BW … BC 860 BW
BC 857 CW … BC 860 CW
C = 2 mA, VCE = 5 V
BC 856 AW … BC 859 AW
BC 856 BW … BC 860 BW
BC 857 CW … BC 860 CW
I
h
CB0
FE
–
–
–
–
–
125
220
420
–
–
140
250
480
180
290
520
15
5
–
–
–
250
475
800
nA
µA
–DC current gain
Collector-emitter saturation voltage
C = 10 mA, IB = 0.5 mA
C = 100 mA, IB = 5 mA
Base-emitter saturation voltage
C = 10 mA, IB = 0.5 mA
C = 100 mA, IB = 5 mA
Base-emitter voltage
C = 2 mA, VCE = 5 V
C = 10 mA, VCE = 5 V
1)
1)
V
V
V
CEsat
BEsat
BE(on)
–
–
–
–
600
–
75
250
700
850
650
–
mV
300
650
–
–
750
820
Pulse test: t≤ 300 µs, D = 2 %.
Semiconductor Group 3
Page 4
Electrical Characteristics
I
I
I
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
AC characteristics
BC 856W ... BC 860W
UnitValuesParameter Symbol
min. typ. max.
f
T – 250 –
C = 20 mA, VCE = 5 V, f = 100 MHz
C
obo –3–
CB = 10 V, f = 1 MHz
V
Input capacitance
CB = 0.5 V, f = 1 MHz
V
C = 2 mA, VCE = 5 V, f = 1 kHz
BC 856 AW … BC 859 AW
BC 856 BW … BC 860 BW
BC 857 CW … BC 860 CW
Open-circuit reverse voltage transfer ratio
C = 2 mA, VCE = 5 V, f = 1 kHz
BC 856 AW … BC 859 AW
BC 856 BW … BC 860 BW
BC 857 CW … BC 860 CW
C = 2 mA, VCE = 5 V, f = 1 kHz
BC 856 AW … BC 859 AW
BC 856 BW … BC 860 BW
BC 857 CW … BC 860 CW
C
ibo –10–
11e
h
–
–
–
12e
h
–
–
–
21e
h
–
–
–
2.7
4.5
8.7
1.5
2.0
3.0
200
330
600
–
–
–
–
–
–
–
–
–
MHzTransition frequency
pFOutput capacitance
kΩShort-circuit input impedance
10
–Short-circuit forward current transfer ratio
–4
C = 2 mA, VCE = 5 V, f = 1 kHz
BC 856 AW … BC 859 AW
BC 856 BW … BC 860 BW
BC 857 CW … BC 860 CW
C = 0.2 mA, VCE = 5 V, RS = 2 kΩ
f= 30 Hz … 15 kHz BC 859W
BC 860W
f= 1 kHz,
C = 0.2 mA, VCE = 5 V, RS = 2 kΩ
∆ f = 200 Hz BC 859W
BC 860W
22e
h
–
–
–
18
30
60
–
–
–
F
–
–
–
–
n
V
1.2
1.0
1.0
1.0
4
3
4
4
µSOpen-circuit output admittance
dBNoise figure
µVEquivalent noise voltage
f= 10 Hz … 50 Hz
BC 860W
Semiconductor Group 4
– – 0.110
Page 5
BC 856W ... BC 860W
Total power dissipation Ptot = f (TA*; TS)
* Package mounted on epoxy
Collector-base capacitance CCB0 = f (VCB0)
Emitter-base capacitance C
EB0 = f (VEB0)
Permissible pulse load P
tot max/Ptot DC = f (tp)
Transition frequency f
CE = 5 V
V
T = f (IC)
Semiconductor Group 5
Page 6
BC 856W ... BC 860W
Collector cutoff current ICB0 = f (TA)
CB = 30 V
V
Collector-emitter saturation voltage
C = f (VCEsat), hFE = 20
I
DC current gain h
CE = 5 V
V
FE = f (IC)
Base-emitter saturation voltage
C = f (VBEsat), hFE = 20
I
Semiconductor Group 6
Page 7
BC 856W ... BC 860W
h parameter he = f (IC) normalized
CE = 5 V
V
h parameter he = f (VCE) normalized
C =2mA
I
Noise figure F = f (V
C = 0.2 mA, RS = 2 kΩ, f = 1 kHz
I
CE)
Noise figure F = f (f)
C = 0.2 mA, VCE = 5 V, RS = 2 kΩ
I
Semiconductor Group 7
Page 8
BC 856W ... BC 860W
Noise figure F = f (IC)
CE = 5 V, f = 120 Hz
V
Noise figure F = f (IC)
CE = 5 V, f = 1 kHz
V
Noise figure F = f (I
CE = 5 V, f = 10 kHz
V
C)
Semiconductor Group 8
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