Datasheet BC858, BC857 Datasheet (SGS Thomson Microelectronics)

Page 1
SMALL SIGNAL PNP TRANSISTORS
Type Marking
BC857A 3E BC857B 3F BC858A 3J BC858B 3K
SILICONEPITAXIALPLANAR PNP
TRANSISTORS
MINIATUREPLASTIC PACKAGEFOR
APPLICATIONIN SURFACE MOUNTING CIRCUITS
VERYLOW NOISE AF AMPLIFIER
BC857 BC858
2
3
1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
BC857 BC858
V V V V
I I I P
T
Collector-Emitter Voltage (VBE=0) -50 -30 V
CES
Collect or- B as e V o lt age (IE=0) -50 -30 V
CBO
Collector-Emitter Voltage (IB=0) -45 -30 V
CEO
Emitter-Base Voltage (IC=0) -5 V
EBO
Collect or Cur rent -0. 1 A
I
C
Collect or P ea k Current -0. 2 A
CM
Base Peak Current -0. 2 A
BM
Emitter Peak Current -0.2 A
EM
Tot al Dissipat ion at Tc=25oC 300 mW
tot
Storage Temperature -65 t o 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
October 1997
1/5
Page 2
BC857/BC858
THERMAL DATA
R
thj-amb
R
thj-SR
Mounted on a ceramic substrate area = 10 x 8 x 0.6 mm
Thermal Resistance Junction-Ambient Max
Ther mal Resistance Junct ion-Subst rate Max
420 330
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
V
(BR)CES
V
(BR) CBO
V
(BR) CEO
V
(BR)EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
C
CBO
f
Collector Cut- of f Current (I
E
=0)
Collector-Em it t er
Break dow n Voltage
=0)
(V
BE
Co llec tor-Bas e
Break dow n Voltage
=0)
(I
E
Co llec tor-Em it t er
Break dow n Voltage
=0)
(I
B
Emitt er-Base Break dow n Voltage
=0)
(I
C
Collector-Em it t er
Saturation Voltage
Base-Emitt er
Saturation Voltage
Base-Emitt er O n
Volt age DC C ur rent Gain IC=-10µAVCE=-5V
FE
Tr ansition Frequency IC=-10mA VCE= - 5 V f = 100MHz 150 MHz
T
Collector Base
CB
=-30V
V
CE
V
=-30V T
CE
I
=-10µA
C
for B C857 for B C858
I
=-10µA
C
for B C857 for B C858
I
=-2mA
C
for B C857 for B C858
I
=-10µA
C
for B C857 for B C858
IC=-10mA IB= -0.5 mA
=-100mA IB=-5mA
I
C
IC=-10mA IB= -0.5 mA
=-100mA IB=-5mA
I
C
IC=-2mA VCE=-5V I
=-10mA VCE=-5V
C
for groupA for groupB
=-2mA VCE=-5V
I
C
for groupA for groupB
amb
=150oC
-50
-30
-50
-30
-45
-30
-6
-5
-0.09
-0.25
-0.75
-0.9
-0.6 -0.66
-0.72
90
150
110 200
180 290
IE=0 VCB= -10 V f = 1 MHz 6 pF
-15
-5
-0.3
-0.65
-0.75
-0.82
220 450
Capacit a nc e
NF Noise Fig ure V
Pulsed: Pulse duration = 300 µs,duty cycle 2%
=-5V IC=-0.2mA f=1KHz
CE
f = 200 Hz R
=2K
G
2
1.2
10
4
nA µA
V V
V V
V V
V V
V V
V V
V V
dB dB
2/5
Page 3
BC857/BC858
ELECTRICAL CHARACTERISTICS (Continued)
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
h
h
h
h
Pulsed: Pulse duration = 300 µs,duty cycle 2%
Input Impedance VCE=-5V IC=-2mA f=1KHz
ie
for groupA for groupB
Reverse Voltage Rati o VCE=-5V IC=-2mA f=1KHz
re
for groupA for groupB
Small Signal Curr ent
fe
Gain
VCE=-5V IC=-2mA f=1KHz for groupA for groupB
Out put Ad mit t a nc e VCE=-5V IC=-2mA f=1KHz
oe
for groupA for groupB
1.6
3.2
2.7
4.5
1.5 2
220 330
18 30
4.5
8.5
30 60
K K
10 10
-4
-4
µs µs
3/5
Page 4
BC857/BC858
SOT-23 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 0.85 1.1 33.4 43.3 B 0.65 0.95 25.6 37.4 C 1.20 1.4 47.2 55.1 D 2.80 3 110.2 118 E 0.95 1.05 37.4 41.3 F 1.9 2.05 74.8 80.7 G 2.1 2.5 82.6 98.4 H 0.38 0.48 14.9 18.8
L 0.3 0.6 11.8 23.6 M 0 0.1 0 3.9 N 0.3 0.65 11.8 25.6 O 0.09 0.17 3.5 6.7
mm mils
4/5
0044616/B
Page 5
BC857/BC858
Information furnished is believed tobe accurateand reliable. However,SGS-THOMSONMicroelectronics assumesno responsability for the consequencesof use ofsuch information nor for anyinfringement of patentsor other rights of third parties which may resultsfrom its use. No licenseis grantedby implicationor otherwise underany patent or patentrights of SGS-THOMSON Microelectronics.Specificationsmentioned in this publication are subject to change without notice.This publication supersedes and replaces all information previouslysupplied. SGS-THOMSONMicroelectronics productsare notauthorizedfor useascriticalcomponents in lifesupportdevicesor systems withoutexpress writtenapproval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSONMicroelectronics- Printedin Italy - AllRights Reserved
Australia- Brazil - Canada- China- France- Germany - HongKong - Italy- Japan- Korea- Malaysia- Malta - Morocco- TheNetherlands -
Singapore- Spain- Sweden- Switzerland- Taiwan- Thailand - United Kingdom - U.S.A
SGS-THOMSONMicroelectronicsGROUP OF COMPANIES
.
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