
SMALL SIGNAL PNP TRANSISTORS
Type Marking
BC857A 3E
BC857B 3F
BC858A 3J
BC858B 3K
■ SILICONEPITAXIALPLANAR PNP
TRANSISTORS
■ MINIATUREPLASTIC PACKAGEFOR
APPLICATIONIN SURFACE MOUNTING
CIRCUITS
■ VERYLOW NOISE AF AMPLIFIER
■ NPNCOMPLEMENTS FORBC857 IS BC847
BC857
BC858
2
3
1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Parameter Val u e Uni t
BC857 BC858
V
V
V
V
I
I
I
P
T
Collector-Emitter Voltage (VBE=0) -50 -30 V
CES
Collect or- B as e V o lt age (IE=0) -50 -30 V
CBO
Collector-Emitter Voltage (IB=0) -45 -30 V
CEO
Emitter-Base Voltage (IC=0) -5 V
EBO
Collect or Cur rent -0. 1 A
I
C
Collect or P ea k Current -0. 2 A
CM
Base Peak Current -0. 2 A
BM
Emitter Peak Current -0.2 A
EM
Tot al Dissipat ion at Tc=25oC 300 mW
tot
Storage Temperature -65 t o 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
October 1997
1/5

BC857/BC858
THERMAL DATA
R
thj-amb
R
thj-SR
• Mounted on a ceramic substrate area = 10 x 8 x 0.6 mm
Thermal Resistance Junction-Ambient Max
•
•
Ther mal Resistance Junct ion-Subst rate Max
420
330
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
I
V
(BR)CES
V
(BR) CBO
V
(BR) CEO
V
(BR)EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
C
CBO
f
Collector Cut- of f
Current (I
E
=0)
∗ Collector-Em it t er
Break dow n Voltage
=0)
(V
BE
∗ Co llec tor-Bas e
Break dow n Voltage
=0)
(I
E
∗ Co llec tor-Em it t er
Break dow n Voltage
=0)
(I
B
Emitt er-Base
Break dow n Voltage
=0)
(I
C
∗ Collector-Em it t er
Saturation Voltage
∗ Base-Emitt er
Saturation Voltage
∗ Base-Emitt er O n
Volt age
DC C ur rent Gain IC=-10µAVCE=-5V
FE
Tr ansition Frequency IC=-10mA VCE= - 5 V f = 100MHz 150 MHz
T
Collector Base
CB
=-30V
V
CE
V
=-30V T
CE
I
=-10µA
C
for B C857
for B C858
I
=-10µA
C
for B C857
for B C858
I
=-2mA
C
for B C857
for B C858
I
=-10µA
C
for B C857
for B C858
IC=-10mA IB= -0.5 mA
=-100mA IB=-5mA
I
C
IC=-10mA IB= -0.5 mA
=-100mA IB=-5mA
I
C
IC=-2mA VCE=-5V
I
=-10mA VCE=-5V
C
for groupA
for groupB
=-2mA VCE=-5V
I
C
for groupA
for groupB
amb
=150oC
-50
-30
-50
-30
-45
-30
-6
-5
-0.09
-0.25
-0.75
-0.9
-0.6 -0.66
-0.72
90
150
110
200
180
290
IE=0 VCB= -10 V f = 1 MHz 6 pF
-15
-5
-0.3
-0.65
-0.75
-0.82
220
450
Capacit a nc e
NF Noise Fig ure V
∗
Pulsed: Pulse duration = 300 µs,duty cycle ≤ 2%
=-5V IC=-0.2mA f=1KHz
CE
∆f = 200 Hz R
=2KΩ
G
2
1.2
10
4
nA
µA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
dB
dB
2/5

BC857/BC858
ELECTRICAL CHARACTERISTICS (Continued)
Symbol Parameter Test C ondition s Min. Typ. Max. Unit
h
h
h
h
∗
Pulsed: Pulse duration = 300 µs,duty cycle ≤ 2%
Input Impedance VCE=-5V IC=-2mA f=1KHz
ie
for groupA
for groupB
Reverse Voltage Rati o VCE=-5V IC=-2mA f=1KHz
re
for groupA
for groupB
Small Signal Curr ent
fe
Gain
VCE=-5V IC=-2mA f=1KHz
for groupA
for groupB
Out put Ad mit t a nc e VCE=-5V IC=-2mA f=1KHz
oe
for groupA
for groupB
1.6
3.2
2.7
4.5
1.5
2
220
330
18
30
4.5
8.5
30
60
KΩ
KΩ
10
10
-4
-4
µs
µs
3/5

BC857/BC858
SOT-23 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 0.85 1.1 33.4 43.3
B 0.65 0.95 25.6 37.4
C 1.20 1.4 47.2 55.1
D 2.80 3 110.2 118
E 0.95 1.05 37.4 41.3
F 1.9 2.05 74.8 80.7
G 2.1 2.5 82.6 98.4
H 0.38 0.48 14.9 18.8
L 0.3 0.6 11.8 23.6
M 0 0.1 0 3.9
N 0.3 0.65 11.8 25.6
O 0.09 0.17 3.5 6.7
mm mils
4/5
0044616/B

BC857/BC858
Information furnished is believed tobe accurateand reliable. However,SGS-THOMSONMicroelectronics assumesno responsability for the
consequencesof use ofsuch information nor for anyinfringement of patentsor other rights of third parties which may resultsfrom its use. No
licenseis grantedby implicationor otherwise underany patent or patentrights of SGS-THOMSON Microelectronics.Specificationsmentioned
in this publication are subject to change without notice.This publication supersedes and replaces all information previouslysupplied.
SGS-THOMSONMicroelectronics productsare notauthorizedfor useascriticalcomponents in lifesupportdevicesor systems withoutexpress
writtenapproval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSONMicroelectronics- Printedin Italy - AllRights Reserved
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Singapore- Spain- Sweden- Switzerland- Taiwan- Thailand - United Kingdom - U.S.A
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