Datasheet BC857A, BC857B, BC857BL3, BC857BW, BC857C Datasheet (Infineon) [ru]

...
Page 1
PNP Silicon AF Transistor
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Low noise between 30 hz and 15 kHz
BC847...-BC850... (NPN)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
1)
BC857...-BC860...
1
BC857BL3 is not qualified according AEC Q101
Type Marking Pin Configuration Package
BC857A
BC857B
BC857BL3*
BC857BW
BC857C
BC857CW
BC858A
BC858B
BC858BW
BC858C
BC858CW
BC859C
BC860B
3Es
3Fs
3F
3Fs
3Gs
3Gs
3Js
3Ks
3Ks
3Ls
3Ls
4Cs
4Fs
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SOT23
SOT23
TSLP-3-1
SOT323
SOT23
SOT323
SOT23
SOT23
SOT323
SOT23
SOT323
SOT23
SOT23
BC860BW
BC860CW
4Fs
4Gs
* Not qualified according AEC Q101
1=B
1=B
2=E
2=E
1
3=C
3=C
-
-
-
-
-
-
SOT323
SOT323
2011-09-19
Page 2
Maximum Ratings
g
BC857...-BC860...
Parameter
Collector-emitter voltage
Symbol Value Unit
V
BC857..., BC860...
BC858..., BC859...
Collector-base voltage
V
BC857..., BC860...
BC858..., BC859...
Emitter-base voltage V
Collector current I
Peak collector current, tp 10 ms I
Total power dissipation
71 °C, BC857-BC860
T
S
135 °C, BC857BL3
T
S
124 °C, BC857W-BC860W
T
S
P
Junction temperature T
CEO
CBO
EBO
C
CM
tot
j
V
45
30
50
30
5
100 mA
200
mW
330
250
250
150 °C
Storage temperature T
Thermal Resistance Parameter
Junction - soldering point1)
BC857-BC860
BC857BL3
BC857W-BC860W
1
For calculation of R
please refer to Application Note AN077 (Thermal Resistance Calculation)
thJA
st
-65 ... 150
Symbol Value Unit
R
thJS
K/W
240
60
105
2
2011-09-19
Page 3
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter
Symbol Values Unit
min. typ. max.
DC Characteristics
BC857...-BC860...
Collector-emitter breakdown voltage
I
= 10 mA, IB = 0 , BC857..., BC860...
C
I
= 10 mA, IB = 0 , BC858..., BC859...
C
Collector-base breakdown voltage
I
= 10 µA, IE = 0 , BC857..., BC860...
C
I
= 10 µA, IE = 0 , BC858..., BC859...
C
Emitter-base breakdown voltage
I
= 1 µA, IC = 0
E
Collector-base cutoff current
V
= 45 V, IE = 0
CB
V
= 30 V, IE = 0 , TA = 150 °C
CB
DC current gain1)
I
= 10 µA, VCE = 5 V, hFE-grp.A
C
I
= 10 µA, VCE = 5 V, hFE-grp.B
C
I
= 10 µA, VCE = 5 V, hFE-grp.C
C
I
= 2 mA, VCE = 5 V, hFE-grp.A
C
I
= 2 mA, VCE = 5 V, hFE-grp.B
C
I
= 2 mA, VCE = 5 V, hFE-grp.C
C
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
h
FE
45
30
50
30
-
-
-
-
5 - -
-
-
-
-
-
125
220
420
-
-
140
250
480
180
290
520
-
-
-
-
0.015
5
-
-
-
250
475
800
V
µA
-
Collector-emitter saturation voltage1)
I
= 10 mA, IB = 0.5 mA
C
I
= 100 mA, IB = 5 mA
C
Base emitter saturation voltage1)
I
= 10 mA, IB = 0.5 mA
C
I
= 100 mA, IB = 5 mA
C
Base-emitter voltage1)
I
= 2 mA, VCE = 5 V
C
I
= 10 mA, VCE = 5 V
C
1
Pulse test: t < 300µs; D < 2%
3
V
CEsat
V
BEsat
V
BE(ON)
-
-
-
-
600
-
75
250
700
850
650
-
mV
300
650
-
-
750
820
2011-09-19
Page 4
Electrical Characteristics at TA = 25°C, unless otherwise specified
BC857...-BC860...
Parameter
AC Characteristics
Transition frequency
I
= 20 mA, VCE = 5 V, f = 100 MHz
C
Collector-base capacitance
V
= 10 V, f = 1 MHz
CB
Emitter-base capacitance
V
= 0.5 V, f = 1 MHz
EB
Short-circuit input impedance
I
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A
C
I
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B
C
I
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C
C
Open-circuit reverse voltage transf. ratio
I
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A
C
I
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B
C
I
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C
C
Symbol Values Unit
min. typ. max.
f
C
C
h
h
T
cb
eb
11e
12e
- 250 - MHz
- 1.5 - pF
- 8 -
-
-
-
-
-
-
2.7
4.5
8.7
1.5
2
3
k
-
-
-
10
-4
-
-
-
Short-circuit forward current transf. ratio
I
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A
C
I
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B
C
I
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C
C
Open-circuit output admittance
I
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.A
C
I
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.B
C
I
= 2 mA, VCE = 5 V, f = 1 kHz, hFE-grp.C
C
Noise figure
I
= 0.2 mA, VCE = 5 V, f = 1 kHz,
C
f = 200 Hz, R
= 2 kΩ, BC859, BC850
S
Equivalent noise voltage
I
= 200 mA, VCE = 5 V, RS = 2 kΩ,
C
f = 10...50 Hz, BC860
h
h
F
V
21e
22e
n
-
-
-
-
-
-
200
330
600
18
30
60
-
-
-
-
µS
-
-
-
- 1 4 dB
- - 0.11 µV
4
2011-09-19
Page 5
BC857...-BC860...
DC current gain hFE = ƒ(IC)
V
= 1 V
CE
3
10
5
100
h
FE
2
10
5
1
10
5
0
10
10 10 10 10
C
25
C
-50
C
-2
-1
555
10
0
Collector-emitter saturation voltage
I
= ƒ(V
C
EHP00382
12
mA
Ι
C
10 mA
Ι
C
10
10
10
), hFE = 20
CEsat
2
100
C
25
C
-50
1
C
EHP00380
5
0
5
-1
0
0.1 0.2 0.4
0.3 0.5
V
V
CEsat
Base-emitter saturation voltage
I
= ƒ(V
C
10 mA
Ι
C
10
10
10
2
1
5
0
5
-1
0
), hFE = 20
BEsat
C
100
C C
25
-50
C
0.2 0.4 0.8
0.6 V 1.2
EHP00379
V
BEsat
Collector cutoff current I
V
= 30 V
CBO
4
10
nA
Ι
CB0
3
10
5
2
10
5
1
10
5
0
10
5
-1
10
0 50 100 150
max
CBO
= ƒ(TA)
EHP00381
typ
C
T
A
5
2011-09-19
Page 6
BC857...-BC860...
Transition frequency fT = ƒ(IC)
V
= 5 V
CE
3
10
MHz
f
T
5
2
10
5
1
10
-1 0 1 2
10 10 10 10
5
5
EHP00378
mA
Ι
C
Collector-base capacitance C
Emitter-base capacitance
12
pF
10
)
9
EB
(C
8
CB
C
7
6
5
4
3
2
1
0
0 4 8 12 16
CEB
C
eb
= ƒ(V
cb
= ƒ(V
CB
EB
CCB
V
VCB(V
)
)
22
EB
Total power dissipation P
BC856-BC860
360
mW
300
270
240
tot
P
210
180
150
120
90
60
30
0
0 15 30 45 60 75 90 105 120
= ƒ(TS)
tot
°C
T
Total power dissipation P
= ƒ(TS)
tot
BC857BL3
300
mW
250
225
200
tot
P
175
150
125
100
75
50
25
150
S
0
0 15 30 45 60 75 90 105 120
°C
150
T
S
6
2011-09-19
Page 7
BC857...-BC860...
Total power dissipation P
BC857W-BC860W
300
mW
250
225
200
tot
P
175
150
125
100
75
50
25
0
0 15 30 45 60 75 90 105 120
= ƒ(TS)
tot
T
°C
Permissible Pulse Load
P
totmax/PtotDC
= ƒ(tp)
BC857/W-BC860/W
T
D
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-2
EHP00377
=
s
t
p
10
0
3
10
P
totmax totPDC
10
5
=
D
2
t
p
t
p
T
5
1
10
5
0
10
150
S
-6
10
10-510-410-310
Permissible Puls Load R
BC857BL3
2
10
1
10
thJS
R
0
10
-1
10
-7
-6
-5
10
10
10
10
-4
thJS
-3
10
= ƒ (tp)
0.5
0.2
0.1
0.05
0.02
0.01
0.005 D = 0
-2
10
Permissible Pulse Load
P
totmax/PtotDC
= ƒ(tp)
BC857BL3
3
10
totDC
/ P
2
10
totmax
P
1
10
0
s
t
0
10
p
10
10
-7
-6
10
-5
10
10
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-4
-3
10
10
-2
t
0
s
10
p
7
2011-09-19
Page 8
Package Outline
Foot Print
Package SOT23
±0.1
2.9
12
1)
+0.1
0.4
-0.05
1.9
0.25MBC
1) Lead width can be 0.6 max. in dambar area
B
3
C
0.95
0.8
0.15 MIN.
±0.15
2.4
0.2
±0.1
1
0.1 MAX.
10˚ MAX.
0.08...0.15
0...8˚
M
A
BC857...-BC860...
±0.1
1.3
10˚ MAX.
A
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel
Pin 1
0.8 1.2
EH
4
0.9
s
0.9 0.91.3
Manufacturer
2005, June
Date code (YM)
BCW66
Type code
0.2
Pin 1
3.15
2.13
8
2.65 8
1.15
2011-09-19
Page 9
Package Outline
Package SOT323
±0.2
2
0.3
+0.1
-0.05
3x
M
0.1
3
0.1 MAX.
0.1
0.9
BC857...-BC860...
±0.1
A
Foot Print
Marking Layout (Example)
12
0.650.65
0.6
0.8
0.65
0.65
1.6
±0.1
2.1
0.1 MIN.
M
0.2 A
0.15
+0.1
-0.05
±0.1
1.25
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel
Pin 1
Pin 1
4
2.15
Manufacturer
2005, June
Date code (YM)
BCR108W
Type code
0.2
8
2.3
1.1
9
2011-09-19
Page 10
Package TSLP-3-1
Package Outline
Top view Bottom view
+0.1
0.4
0.05 MAX.
1
3
2
Pin 1 marking
1) Dimension applies to plated terminal
0.5
2x 0.15
±0.035
0.35
±0.035
Foot Print
For board assembly information please refer to Infineon website "Packages"
0.6
1
0.225
0.15
0.35
0.3
0.35
0.225
0.2
1)
±0.05
0.65
±0.05
0.945
0.17
3
2
1)
0.2
0.6
0.45
±0.05
1
1)
±0.035
0.25 2x
0.275
0.355
R0.1
1)
BC857...-BC860...
±0.035
0.25
±0.05
1
0.315
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 15.000 Pieces/Reel
Stencil aperturesCopper Solder mask
BFR193L3
Type code
Pin 1 marking
Laser marking
4
1.16
8
0.5
Pin 1 marking
0.76
10
2011-09-19
Page 11
BC857...-BC860...
Edition 2009-11-16
Published by Infineon Technologies AG 81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
>).
11
2011-09-19
Page 12
Loading...