Datasheet BC 857B INF Datasheet

PNP Silicon AF Transistors

BC 856 ... BC 860

• For AF input stages and driver applications

• High current gain

• Low collector-emitter saturation voltage

• Low noise between 30 Hz and 15 kHz

• Complementary types: BC 846, BC 847, BC 848

BC 849, BC 850 (NPN)

3

1

Type Marking Pin Configuration Package

BC 856A

BC 856B

BC 857A

3As

3Bs

3Es

1 = B

2 = E

3 = C

SOT-23

2

VPS05161

BC 857B

BC 857C

BC 858A

BC 858B

BC 858C

BC 859A

BC 859B

BC 859C

BC 860B

BC 860C

3Fs

3Gs

3Js

3Ks

3Ls

4As

4Bs

4Cs

4Fs

4Gs

1 = B

2 = E

3 = C

SOT-23

1 Sep-28-1999

Maximum Ratings

j

g

BC 856 ... BC 860

Symbol BC 856Parameter Unit

BC 857

BC 860

Collector-emitter voltage

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

DC collector current

Peak collector current

Peak base current

Peak emitter current 200

Total power dissipation, T

= 71 °C P

S

Junction temperature

Storage temperature

V

I

T

C

CM

BM

EM

CEO

CBO

CES

EBO

tot

st

65 45 30 V

80 50 30

5080 30

5 5 5

100 mA

200 mA

200

330 mW

150 °C

-65 ... 150

Thermal Resistance

Junction ambient

Junction - soldering point

1)

R

thJA

thJS

≤310

≤240

BC 858

BC 859

K/W

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

I

= 10 mA, IB = 0

C

Collector-base breakdown voltage

I

= 10 µA, IB = 0

C

1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu

BC 856

BC 857/860

BC 858/859

BC 856

BC 857/860

BC 858/859

V

(BR)CEO

V

(BR)CBO

65

45

30

80

50

30

-

V

-

2 Sep-28-1999

Electrical Characteristics at TA = 25°C, unless otherwise specified.

BC 856 ... BC 860

Parameter

DC Characteristics

Collector-emitter breakdown voltage

I

= 10 µA, VBE = 0

C

Emitter-base breakdown voltage

I

= 1 µA, IC = 0

E

V

= 30 V, IE = 0

CB

V

= 30 V, IE = 0 , TA = 150 °C

CB

DC current gain 1)

I

= 10 µA, VCE = 5 V

C

BC 856

BC 857/860

BC 858/859

h

-group A

FE

h

-group B

FE

h

-group C

FE

Symbol UnitValues

typ. max.min.

V

(BR)CES

V

(BR)EBO

I

CBO

I

CBO

h

FE

80

50

30

- µA

-

- 4Collector cutoff current

140

250

480

V

-

--5

15Collector cutoff current

nA- -

-

DC current gain 1)

I

= 2 mA, VCE = 5 V

C

Collector-emitter saturation voltage1)

I

= 10 mA, IB = 0.5 mA

C

I

= 100 mA, IB = 5 mA

C

Base-emitter saturation voltage 1)

I

= 10 mA, IB = 0.5 mA

C

I

= 100 mA, IB = 5 mA

C

Base-emitter voltage 1)

I

= 2 mA, VCE = 5 V

C

I

= 10 mA, VCE = 5 V

C

h

FE

h

FE

h

FE

-group A

-group B

-group C

h

FE

V

CEsat

V

BEsat

V

BE(ON)

125

220

420

-

600

-

180

290

520

75

250

700

850

650

-

250

475

800

mV

300

650

-

750

820

1) Pulse test: t ≤ 300µs, D = 2%

3 Sep-28-1999

Electrical Characteristics at TA = 25°C, unless otherwise specified.

BC 856 ... BC 860

Parameter

AC Characteristics

Transition frequency

= 20 mA, VCE = 5 V, f = 100 MHz

I

C

Collector-base capacitance

= 10 V, f = 1 MHz

V

CB

Emitter-base capacitance

= 0.5 V, f = 1 MHz

V

EB

Short-circuit input impedance

= 2 mA, VCE = 5 V, f = 1 kHz

I

C

Open-circuit reverse voltage transf.ratio

I

= 2 mA, VCE = 5 V, f = 1 kHz

C

Symbol Values Unit

min. typ. max.

f

T

C

cb

C

eb

-gr.A

h

FE

h

-gr.B

FE

-gr.C

h

FE

h

-gr.A

FE

-gr.B

h

FE

h

-gr.C

FE

h

11e

12e

- 250 - MHz

- 3 - pF

- 8 -

-

2.7

4.5

8.7

1.5

2

3

kΩ

-

10

-4

-

Short-circuit forward current transf.ratio

= 2 mA, VCE = 5 V, f = 1 kHz

I

C

Open-circuit output admittance

I

= 2 mA, VCE = 5 V, f = 1 kHz

C

Noise figure

I

= 0.2 mA, VCE = 5 V, RS = 1 kΩ,

C

f = 1 kHz, ∆ f = 200 Hz

Equivalent noise voltage

= 200 µA, VCE = 5 V, RS = 2 kΩ,

I

C

f = 10 ... 50 Hz

-gr.A

h

FE

h

-gr.B

FE

-gr.C

h

FE

h

-gr.A

FE

-gr.B

h

FE

h

-gr.C

FE

BC 859

BC 860

h

F

V

21e

22e

n

-

200

330

600

18

30

60

-

µS

-

- - - dB

- - 0.11 µV

4 Sep-28-1999

BC 856 ... BC 860

)

Total power dissipation P

tot

* Package mounted on epoxy

400

mW

P

tot

300

T

200

100

0

AS

= f (TA*;TS)

EHP00375

T

˚C

T T;

AS

Collector-base capacitance C

Emitter-base capacitance C

BC 856...860

12 pF

C

CB0

(

)

C

EB0

CB

EB

= f (V

EHP00376

CBO

EBO

)

10

8

C

EBO

6

4

C

CBO

2

15050 100

0

-1 0 1

10

5

10 10

V

CB0

V

)

(

V

EB0

Permissible pulse load

P

totmax

P

tot max

totPDC

10

/ P

3

5

2

5

1

5

0

10

= f (tp)

totDC

=

D

-6

10-510-410-310

Transition frequency f

V

= 5V

CE

f

T

10

MHz

3

5

EHP00377

t

p

t

p

T

D

=

= f (IC)

T

EHP00378

0

0.005

0.01

0.02

0.05

10

2

0.1

0.2

-2

0.5

0

10

s

t

p

5

1

10

-1 0 1 2

10 10 10 10

5

mA

Ι

C

5 Sep-28-1999

BC 856 ... BC 860

Collector cutoff current I

V

= 30V

CB

4

10

nA

Ι

CB0

3

10

5

2

10

5

1

10

5

0

10

5

-1

10

0 50 100 150

max

CBO

= f (TA)

EHP00381

typ

C

T

Collector-emitter saturation voltage

I

= f (V

C

2

10

mA

Ι

C

1

10

5

0

10

5

-1

10

0

A

), hFE = 20

CEsat

100

25

-50

0.1 0.2 0.4

EHP00380

C C C

0.3 0.5

V

CEsat

DC current gain h

V

= 5V

CE

3

10

5

100

h

FE

2

10

5

1

10

5

0

10

10 10 10 10

C

25

C

-50

C

-2

-1

555

= f (IC)

FE

10

Base-emitter saturation voltage

I

= f (V

C

EHP00382

10

2

mA

Ι

C

1

10

5

0

10

5

-1

0

12

mA

Ι

C

10

0

), hFE = 20

BEsat

C

100

C C

25

-50

C

0.2 0.4 0.8

EHP00379

0.6 V 1.2

V

BEsat

6 Sep-28-1999

BC 856 ... BC 860

h parameter h

V

= 5V

CE

BC 856...860 EHP00383

2

10

5

h

e

h

11e

1

10

5

h

12e

0

10

5

10

h

21e

h

-1

-1 0 1

10 10 10

= f (IC) normalized

e

V

= 5 V

CE

22e

5

mA

Ι

h parameter h

I

= 2mA

C

BC 856...860 EHP00384

2.0

h

e

= f (VCE) normalized

e

= 2 mA

Ι

C

h

11

1.5

1.0

0.5

0

0102030

C

h

12

h

22

V

CE

Noise figure F = f (V

I

= 0.2mA, RS = 2kΩ, f = 1kHz

C

BC 856...860 EHP00385

20

CE

)

dB

F

15

10

5

0

-1012

10 10 10 10

5 5

Noise figure F = f (f)

I

= 0.2mA, VCE = 5V, RS = 2kΩ

C

BC 856...860 EHP00386

20

dB

F

15

10

5

0

V

CE

-2 -1 1 2

10 10 10 10

10

0

kHz

f

7 Sep-28-1999

BC 856 ... BC 860

Noise figure F = f (I

V

= 5V, f = 120Hz

CE

BC 856...860 EHP00387

20

dB

F

15

= 1 M

R

10

5

0

-3 -2 0 1

10 10 10 10

Ω

S

)

C

100 k 10 k

ΩΩ

-1

10

1 k

Noise figure F = f (I

V

= 5V, f = 1kHz

CE

BC 856...860 EHP00388

20

dB

)

C

F

15

= 1 M

R

S

10

500

Ω

1 k

Ω

5

Ω

0

mA

Ι

C

-3 -2 0 1

10 10 10 10

100 k

ΩΩ

-1

10

10 k

Ω

500

mA

Ι

C

Ω

Noise figure F = f (I

V

= 5V, f = 10kHz

CE

BC 856...860 EHP00389

20

dB

)

C

F

15

10

5

0 10 10 10 10

500 Ω

Ω

1 k

-3 -2 0 1

= 1 MR

10

Ω

-1

S

100 k

10 k

mA

Ι

C

Ω

8 Sep-28-1999