Datasheet BC848BW, BC848B Datasheet (ROHM)

BC848BW / BC848B

)

Transistors

NPN General Purpose Transistor

BC848BW / BC848B

zFeatures

1) BV

CEO

minimum is 30V (IC=1mA)

2) Complements the BC858B / BC858BW.

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol

CBO

Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current

Collector power
dissipation

BC848BW

BC848B
Junction temperature
Storage temperature

∗ When mounted on a 7×5×0.6mm ceramic board.

V
V

CEO

V

EBO

I

P

Tj

Tstg

C

C

Limits

30
30

5

0.1

0.2

0.2

0.35
150

−65~+150

Unit

V
V
V
A

W
W
W

°C
°C

zElectrical characteristics (Ta=25°C)

Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage

Collector cutoff current

Collector-emitter saturation voltage
Base-emitter saturation voltage

DC current transfer ratio
Transition frequency
Collector output capacitance
Collector output capacitance

Symbol

BV

CBO

BV

CEO

BV

EBO

I

CBO

V

CE(sat)

V

BE(on)

h

FE

f

T

Cob

Cib

Min.

30
30

5

−

−

−

−

0.58
200

−

−

−

Typ.

Rev.A 1/5

zExternal dimensions (Unit : mm)

BC848BW

ROHM : UMT3
EIAJ : SC-70

BC848B, BC848C

(1)

ROHM : SST3

∗

Max.

Unit

V

−

−

−

−

−

−

−

−

−

200

3
8

−

−

−

100

5

0.25

0.6

0.77
450

−

−

−

IC=50µA

V

I

C

=1mA

V

I

E

=50µA

nA

CB

=30V

V

µA

V

CB

=30V, Ta=150°C

C/IB

=10mA/0.5mA

I

V

C/IB

=100mA/5mA

I

V

CE/IC

=5V/10mA

V

−

VCE/IC=5V/2mA

MHz

CE

=5V, IE=−20mA, f=100MHz

V

pF

V

CB

=10V, IE=0, f=1MHz

pF

VEB=0.5V, IE=0, f=1MHz

2.0±0.2

1.3±0.1

0.65 0.65
(2)(1)

0.1

0.1

±

±

2.1

1.25

(3)

+0.1

0.3

−0

All terminals have same dimensions

2.9±0.2

1.9±0.2

0.95

0.95

(2)

(3)

+0.1

0.4

−0.05

All terminals have same dimensions

0.15±0.05

0.2

0.1

0.2

−

+

±

1.3

2.4

0.15

Conditions

0.9±0.1

0.7±0.1

0.2

0.95

0.45±0.1

+0.1

−0.06

(SPEC-C22

0~0.1

(1) Emitter

0.1~0.4

(2) Base
(3) Collector

+0.2

−0.1

0~0.1

0.2Min.

(1) Emitter
(2) Base
(3) Collector

Transistors

.0

.0

0

0

zPackaging specifications

Part No.

Packaging type

Marking

Code

Basic ordering unit (pieces)

BC848BW

UMT3

zElectrical characteristic curves

100

Ta=25°C

80

60

40

20

−COLLECTOR CURRENT (mA)

C

I

0

0

VCE−COLLECTOR-EMITTER VOLTAGE (V)

1.2

1.0

0.8

0.6

0.4

0.2

0.1

IB=0mA

1.0

Fig.1 Grounded emitter output

characteristics ( )

1000

G1K
T106
3000

2

BC848B

SST3

G1K

T116

3000

10.0

8.0

6.0

4.0

2.0

-COLLECTOR CURRENT (mA)

C

I

0

0

VCE-COLLECTOR-EMITTER VOLTAGE (V)

Fig.2 Grounded emitter output

35
30

25

20

15

10

5

IB=0µA

1.0

characteristics ( )

Ta=25°C

BC848BW / BC848B

Ta=25°C

2

VCE=10V

5V

100

-DC CURRENT GAIN

FE

h

10

0.1 101.0 100 100
IC-COLLECTOR CURRENT (mA)

Fig.3 DC current gain vs. collector current ( )

1V

1000

Ta=125°C

Ta=25°C

100

-DC CURRENT GAIN

FE

h

10

0.1 101.0 100 100

Ta=−55°C

IC-COLLECTOR CURRENT (mA)

Fig.4 DC current gain vs. collector current ( )

VCE=5V

Rev.A 2/5

Transistors

0

0

0

)

0

0

0

1000

100

-AC CURRENT GAIN

FE

h

10

0.01 10.1 10 10
IC-COLLECTOR CURRENT (mA)

Fig.5 AC current gain vs. collector current

(V)

0.18

0.16

Ta=25°C

C/IB

=10

I

(V

1.8

1.6

Ta=25°C
V

CE

=5V

f=1kHz

Ta=25°C

C/IB

=10

I

BC848BW / BC848B

1.8

1.6

Ta=25°C
V

CE

=5V

0.12

0.08

0.04

0

0.1 1.0 10 10
IC-COLLECTOR CURRENT (mA)

COLLECTOR EMITTER SATURATION VOLTAGE

Fig.6 Collector-emitter saturation

CE(SAT)

V

voltage vs. collector current

1.2

0.8

0.4

BASE EMITTER SATURATION VOLTAGE

0

BE(SAT)

0.1 1.0 10 10

V

IC-COLLECTOR CURRENT (mA)

Fig.7 Base-emitter saturation

voltage vs. collector current

1.2

0.8

0.4

BASE EMITTER VOLTAGE (V)

BE(ON)

V

0

0.1 1.0 10 100
IC-COLLECTOR CURRENT (mA)

Fig.8 Grounded emitter propagation

characteristics

1000

100

-TURN ON TIME (ns)

on

t

10

1.0
IC-COLLECTOR CURRENT (mA)

10 10

Fig.9 Turn-on time vs. collector

current

Ta=25°C

C/IB

=10

I

1000

VCC=40V

100

-RISE TIME (ns)

r

t

10

1.0
IC-COLLECTOR CURRENT (mA)

Fig.10 Rise time vs. collector

current

Ta=25°C

C/IB

=10

I

10 10

1000

100

-STORAGE TIME (ns)

S

t

10

40V
3V

VCE=15V

1.0
IC-COLLECTOR CURRENT (mA)

10 10

Fig.11 Storage time vs. collector

current

Ta=25°C

IC=101B1=101B2

Rev.A 3/5

Transistors

0

0

0

0

0

0

k

1000

BC848BW / BC848B

Ta=25°C
V

CC=40V

C

=101B1=101B2

I

100

Ta=25°C
f=1MHz

50

400MHz300MHz200MHz100MHz

Ta=25°C

400MHz

100

-FALL TIME (ns)

f

t

10

1.0
IC-COLLECTOR CURRENT (mA)

10 10

Fig.12 Fall time vs. collector

current

1000

(MHz)

100

10

CURRENT GAIN-BANDWIDTH PRODUCT

0.5 1.0
IC-COLLECTOR CURRENT (mA)

10 100 50

Fig.15 Gain bandwidth product

vs. collector current

12

10

8

Ta=25°C

CE

=5V

V

10

CAPACITANCE (pF)

Cib

Cob

1

0.5

1105

REVERSE BIAS VOLTAGE (V)

Fig.13 Input/output capacitance

vs. voltage

100

10

hie

hre

hfe

1

hoe

h PARAMETER NORMALIZED TO 1mA

0.1

0.1

11010

IC-COLLECTOR CURRENT (mA)

Fig.16 h parameter

vs. collector current

Ta=25°C

CE

V

C

=100µA

I
RS=10kΩ

=5V

hoe

hie

Ta=25°C
V

CE

=6V

f=270Hz

hre

hfe

IC=1mA
hie=7.8kΩ
hfe=280
hre=4.5×10
hoe=7.5µS

5.0

COLLECTOR-EMITTER VOLTAGE (V)

CE

V

0.5

0.5
IC-COLLECTOR CURRENT (mA)

10 100 50

300MHz
200MHz
100MHz

Fig.14 Gain bandwidth product

10n

−5

VCB=30V

(A)

1n

100P

10P

1P

-COLLECTOR CUTOFF CURRENT

CBO

I

0.1P
0

TA-AMBIENT TEMPERATURE (°C)

7525 50 100 125 15

Fig.17 Collector cutoff current

100k

10k

NF=1dB

3dB

5dB

8dB

12dB

Ta=25°C
V

CE

=5V

f=10Hz

6

4

NF NOISE FIGURE (dB)

2

0

10 1k100 10k 100

f-FREQUENCY (Hz)

Fig.18 Noise vs. collector current

1k

-SOURCE RESISTANCE (Ω)

S

R

100

0.01

0.1 1 10

IC-COLLECTOR CURRENT (mA)

Fig.19 Noise characteristics ( )

Rev.A 4/5

Transistors

0

0

)

0

)

100k

NF

10k

=1dB

BC848BW / BC848B

3dB

5dB

8dB

12dB

Ta=25°C
V

CE

=5V

f=30Hz

100k

10k

Ta=25°C
V

CE=5V

f=1kHz

8dB

12dB

5dB

3dB

NF

=1dB

100k

10k

Ta=25°C
V

CE

=5V

f=10kHz

8dB

5dB

3dB

NF

=1dB

1k

-SOURCE RESISTANCE (Ω)

S

R

100

0.01

0.1 1 1

IC-COLLECTOR CURRENT (mA)

Fig.20 Noise characteristics ( )

1k

-SOURCE RESISTANCE (Ω)

S

R

100

0.01

Fig.21 Noise characteristics (

0.1

IC-COLLECTOR CURRENT (mA)

1k

RS-SOURCE RESISTANCE (Ω)

1

1

100

0.01

Fig.22

0.1 1 1

IC-COLLECTOR CURRENT (mA)

Noise characteristics (

Rev.A 5/5

Appendix

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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

Notes

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1