Datasheet BC847CDXV6T1, BC847CDXV6T5, BC848CDXV6T1, BC848CDXV6T5 Datasheet (ON Semiconductor)

BC847CDXV6T1,
BC847CDXV6T5
BC848CDXV6T1,
BC848CDXV6T5

Dual General Purpose
Transistors

http://onsemi.com

NPN Duals

These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−563 which is designed for
low power surface mount applications.

Features

• These are Pb−Free Devices

MAXIMUM RATINGS

Rating Symbol BC847 BC848 Unit

Collector − Emitter Voltage V
Collector − Base Voltage V
Emitter − Base Voltage V
Collector Current − Continuous I

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

CEO
CBO
EBO

C

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)

Total Device Dissipation, (Note 1)

TA = 25°C
Derate above 25°C

Thermal Resistance,

Junction-to-Ambient (Note 1)

Characteristic

(Both Junctions Heated)

Total Device Dissipation, (Note 1)

TA = 25°C
Derate above 25°C

Thermal Resistance,

Junction-to-Ambient (Note 1)

Junction and Storage

Temperature Range

1. FR−4 @ Minimum Pad

Symbol Max Unit

Symbol Max Unit

45 30 V
50 30 V

6.0 5.0 V

100 100 mAdc

P

D

R

q

JA

P

D

R

q

JA

TJ, T

− 55 to +150 °C

stg

357

2.9

350 °C/W

500

4.0

250 °C/W

mW

mW/°C

mW

mW/°C

(3)

Q

1

(4) (5) (6)

BC847CDXV6T1

6

1

SOT−563

CASE 463A

PLASTIC

(1)(2)

Q

2

MARKING DIAGRAMS

1x M G

G

1

1x = Device Code

x = G or M
M = Date Code
G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.

© Semiconductor Components Industries, LLC, 2005

October, 2005 − Rev. 1

1 Publication Order Number:

BC847CDXV6T1/D

BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector− Emitter Breakdown Voltage

(IC = 10 mA) BC847CDXV6T1

BC848CDXV6T1

Collector− Emitter Breakdown Voltage

(IC = 10 mA, VEB = 0) BC847CDXV6T1

BC848CDXV6T1

Collector− Base Breakdown Voltage

(IC = 10 mA) BC847CDXV6T1

BC848CDXV6T1

Emitter− Base Breakdown Voltage

(IE = 1.0 mA) BC847CDXV6T1

BC848CDXV6T1

Collector Cutoff Current (VCB = 30 V)

(VCB = 30 V, TA = 150°C)

ON CHARACTERISTICS

DC Current Gain

(IC = 10 mA, VCE = 5.0 V)
(IC = 2.0 mA, VCE = 5.0 V)

Collector− Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Collector− Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)

Base− Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Base− Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)

Base− Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)

Base− Emitter Voltage (IC = 10 mA, VCE = 5.0 V)

SMALL− SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz) C
Noise Figure

(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW,f = 1.0 kHz, BW = 200 Hz)

V

(BR)CEO

V

(BR)CES

V

(BR)CBO

V

(BR)EBO

I

CBO

h

V

CE(sat)

V

BE(sat)

V

BE(on)

f

obo

NF

FE

45
30

−

−

−

−
V

V

50
30

−

−

−

−
V

50
30

−

−

−

−
V

6.0

5.0

−

−

−

−

−

−

15

5.0

−

−

nA
mA

−

−

420

−

−

−

−

580

−

T

100 − − MHz

270
520

−

−

0.7

0.9

660

−

−

800

0.25

0.6

−

−

700
770

V

V

mV

− − 4.5 pF
dB

− − 10

ORDERING INFORMATION

Device Specific Marking Package Shipping

BC847CDXV6T1
BC847CDXV6T1G SOT−563

SOT−563 4000 Units / Tape & Reel

4000 Units / Tape & Reel

(Pb−Free)
BC847CDXV6T5 SOT−563 8000 Units / Tape & Reel
BC847CDXV6T5G SOT−563

1G

8000 Units / Tape & Reel

(Pb−Free)
BC848CDXV6T1
BC848CDXV6T1G SOT−563

SOT−563 4000 Units / Tape & Reel

4000 Units / Tape & Reel

(Pb−Free)
BC848CDXV6T5 SOT−563 8000 Units / Tape & Reel
BC848CDXV6T5G SOT−563

1L

8000 Units / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

†

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2

BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5

TYPICAL CHARACTERISTICS

2.0

1.5

1.0

0.8

0.6

0.4

, NORMALIZED DC CURRENT GAIN

0.3

FE

h

0.2

0.2 0.5 1.0 10 20

2.0 5.0

IC, COLLECTOR CURRENT (mAdc)

Figure 1. Normalized DC Current Gain

2.0

1.6

1.2
IC =

10 mA

0.8

IC = 50 mA IC = 100 mA

IC =

20 mA

VCE = 10 V
TA = 25°C

50

IC = 200 mA

100

200

V, VOLTAGE (VOLTS)

1.0
TA = 25°C

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

0.2 0.5 1.0 10 20

V

@ IC/IB = 10

BE(sat)

V

@ VCE = 10 V

BE(on)

V

@ IC/IB = 10

CE(sat)

2.0

IC, COLLECTOR CURRENT (mAdc)

Figure 2. “Saturation” and “On” Voltages

1.0

−55°C to +125°CTA = 25°C

1.2

1.6

2.0

2.4

50

307.05.03.00.70.30.1

10070

0.4

, COLLECTOR−EMITTER VOLTAGE (V)

CE

V

0.02 1.0

0.1

IB, BASE CURRENT (mA)

Figure 3. Collector Saturation Region

10

7.0

5.0

3.0

2.0

C, CAPACITANCE (pF)

1.0

0.4 0.6 1.0 10 20

0.8 4.0 8.0

C

ib

C

ob

2.0 6.0

VR, REVERSE VOLTAGE (VOLTS)

Figure 5. Capacitances

TA = 25°C

10020

2.8

, TEMPERATURE COEFFICIENT (mV/ C)°θ

VB

0.2 1.0

IC, COLLECTOR CURRENT (mA)

10 100

Figure 4. Base−Emitter Temperature Coefficient

400

300

200

100

80

60

40

30

20

T

f, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)

40

0.7 1.0 10 202.0

IC, COLLECTOR CURRENT (mAdc)

VCE = 10 V
TA = 25°C

307.05.03.00.5

50

Figure 6. Current−Gain − Bandwidth Product

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3

BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5

PACKAGE DIMENSIONS

SOT−563, 6 LEAD

CASE 463A−01

ISSUE F

D

−X−

45L6

12 3

e

E

−Y−

b 6 5 PL

0.08 (0.003) X

M

Y

A

H

E

C

SOLDERING FOOTPRINT*

0.3

0.0118

1.0

1.35

0.0531

0.0394

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.

MILLIMETERS

DIM MIN NOM MAX

A 0.50 0.55 0.60
b 0.17 0.22 0.27
C

0.08 0.12 0.18 0.003 0.005 0.007

D 1.50 1.60 1.70
E 1.10 1.20 1.30
e 0.5 BSC
L 0.10 0.20 0.30

H

1.50 1.60 1.70

E

STYLE 1:

PIN 1. EMITTER 1

2. BASE 1

3. COLLECTOR 2

4. EMITTER 2

5. BASE 2

6. COLLECTOR 1

INCHES

MIN NOM MAX

0.020 0.021 0.023

0.007 0.009 0.011

0.059 0.062 0.066

0.043 0.047 0.051

0.02 BSC

0.004 0.008 0.012

0.059 0.062 0.066

0.45

0.0177

0.5

0.5

0.0197

0.0197

SCALE 20:1

ǒ

inches

mm

Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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BC847CDXV6T1/D

4