Datasheet BC847B-TH, BC847C, BC847B, BC847 Datasheet (Philips)

DATA SH EET

Product specification
Supersedes data of 1997 Mar 12

1999 Apr 23

DISCRETE SEMICONDUCTORS

BC846; BC847

NPN general purpose transistors

ook, halfpage

M3D088

1999 Apr 23 2

Philips Semiconductors Product specification

NPN general purpose transistors BC846; BC847

FEATURES

• Low current (max. 100 mA)

• Low voltage (max. 65 V).

APPLICATIONS

• General purpose switching and amplification.

DESCRIPTION

NPN transistor in a SOT23 plastic package.
PNP complements: BC856 and BC857.

MARKING

Note

1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.

TYPE

NUMBER

MARKING

CODE

TYPE

NUMBER

MARKING

CODE

(1)

BC846 1D∗ BC847A 1E∗
BC846A 1A∗ BC847B 1F∗
BC846B 1B∗ BC847C 1G∗
BC847 1H*

PINNING

PIN DESCRIPTION

1 base
2 emitter
3 collector

Fig.1 Simplified outline (SOT23) and symbol.

handbook, halfpage

21

3

MAM255

Top view

2

3

1

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

collector-base voltage open emitter

BC846 − 80 V
BC847 − 50 V

V

CEO

collector-emitter voltage open base

BC846 − 65 V
BC847 − 45 V

V

EBO

emitter-base voltage open collector − 6V

I

C

collector current (DC) − 100 mA

I

CM

peak collector current − 200 mA

I

BM

peak base current − 200 mA

P

tot

total power dissipation T

amb

≤ 25 °C; note 1 − 250 mW

T

stg

storage temperature −65 +150 °C

T

j

junction temperature − 150 °C

T

amb

operating ambient temperature −65 +150 °C

1999 Apr 23 3

Philips Semiconductors Product specification

NPN general purpose transistors BC846; BC847

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

T

j

=25°C unless otherwise specified.

Notes

1. V

BEsat

decreases by about 1.7 mV/K with increasing temperature.

2. VBE decreases by about 2 mV/K with increasing temperature.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to ambient note 1 500 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

collector cut-off current IE= 0; VCB=30V −−15 nA

I

E

= 0; VCB= 30 V; Tj= 150 °C −−5µA

I

EBO

emitter cut-off current IC= 0; VEB=5V −−100 nA

h

FE

DC current gain IC=10µA; VCE=5V;

see Figs 2, 3 and 4

BC846A; BC847A − 90 −
BC846B; BC847B − 150 −
BC847C − 270 −

DC current gain IC= 2 mA; VCE=5V;

see Figs 2, 3 and 4

BC846 110 − 450
BC847 110 − 800
BC846A;BC847A 110 180 220
BC846B; BC847B 200 290 450
BC847C 420 520 800

V

CEsat

collector-emitter saturation
voltage

IC= 10 mA; IB= 0.5 mA − 90 250 mV
I

C

= 100 mA; IB=5mA − 200 600 mV

V

BEsat

base-emitter saturation voltage IC= 10 mA; IB= 0.5 mA; note 1 − 700 − mV

I

C

= 100 mA; IB= 5 mA; note 1 − 900 − mV

V

BE

base-emitter voltage IC= 2 mA; VCE= 5 V; note 2 580 660 700 mV

I

C

= 10 mA; VCE= 5 V; note 2 −−770 mV

C

c

collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz; − 2.5 − pF

f

T

transition frequency IC= 10 mA; VCE= 5 V; f = 100 MHz; 100 −−MHz

F noise figure I

C

= 200 µA; VCE=5V; RS=2kΩ;

f = 1 kHz; B = 200 Hz

− 210dB

1999 Apr 23 4

Philips Semiconductors Product specification

NPN general purpose transistors BC846; BC847

Fig.2 DC current gain; typical values.

BC846A; BC847A.

handbook, full pagewidth

0

250

50

100

150

200

MBH723

10

−2

10

−1

h

FE

1

IC (mA)

10 10

3

10

2

VCE = 5 V

Fig.3 DC current gain; typical values.

BC846B; BC847B.

handbook, full pagewidth

0

300

100

200

MBH724

10

−2

10

−1

h

FE

1

IC (mA)

10 10

3

10

2

VCE = 5 V

1999 Apr 23 5

Philips Semiconductors Product specification

NPN general purpose transistors BC846; BC847

Fig.4 DC current gain; typical values.

BC847C.

handbook, full pagewidth

0

600

200

400

MBH725

10

−2

10

−1

h

FE

1

IC (mA)

10 10

3

10

2

VCE = 5 V

1999 Apr 23 6

Philips Semiconductors Product specification

NPN general purpose transistors BC846; BC847

PACKAGE OUTLINE

UNIT

A

1

max.

b

p

cD

E

e

1

H

E

L

p

Qwv

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

IEC JEDEC EIAJ

mm

0.1

0.48

0.38

0.15

0.09

3.0

2.8

1.4

1.2

0.95

e

1.9

2.5

2.1

0.55

0.45

0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23

b

p

D

e

1

e

A

A

1

L

p

Q

detail X

H

E

E

w M

v M

A

B

AB

0 1 2 mm

scale

A

1.1

0.9

c

X

12

3

Plastic surface mounted package; 3 leads SOT23

1999 Apr 23 7

Philips Semiconductors Product specification

NPN general purpose transistors BC846; BC847

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

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Printed in The Netherlands 115002/00/03/pp8 Date of release: 1999 Apr23 Document order number: 9397 75005808