Datasheet BC847BPDW1T1 Datasheet (ON Semiconductor)

BC846BPDW1T1,
BC847BPDW1T1,
BC847CPDW1T1,
BC848BPDW1T1,
BC848CPDW1T1

Dual General Purpose
Transistors

NPN/PNP Duals

These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.

• Device Marking:

BC846BPDW1T1 = BB
BC847BPDW1T1 = 13F
BC847CPDW1T1 = 13G
BC848BPDW1T1 = 13K
BC848CPDW1T1 = 13L

MAXIMUM RATINGS – NPN

Rating Symbol BC846 BC847 BC848 Unit

Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current —

Continuous

CEO
CBO
EBO

I

C

65 45 30 V
80 50 30 V

6.0 6.0 5.0 V

100 100 100 mAdc

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(3)

Q

1

(4) (5) (6)

6

5

4

1

2

3

SOT–363/SC–88

CASE 419B

STYLE 1

DEVICE MARKING

(1)(2)

Q

2

MAXIMUM RATINGS – PNP

Rating Symbol BC846 BC847 BC848 Unit

Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current —

Continuous

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation

Per Device
FR–5 Board
TA = 25°C
Derate Above 25°C

Thermal Resistance,

Junction to Ambient

Junction and Storage

T emperature Range

1. FR–5 = 1.0 x 0.75 x 0.062 in

 Semiconductor Components Industries, LLC, 2000

March, 2000 – Rev . 0

(1)

CEO
CBO
EBO

I

C

TJ, T

–65 –45 –30 V
–80 –50 –30 V

–5.0 –5.0 –5.0 V

–100 –100 –100 mAdc

P

D

R

q

JA

stg

380
250

3.0

328 °C/W

–55 to +150 °C

See Table

ORDERING INFORMATION

Device Package Shipping

BC846BPDW1T1 SOT–363

mW

mW/°C

1 Publication Order Number:

BC847BPDW1T1 SOT–363 3000 Units/Reel
BC847CPDW1T1 SOT–363 3000 Units/Reel
BC848BPDW1T1 SOT–363 3000 Units/Reel
BC848CPDW1T1 SOT–363 3000 Units/Reel

3000 Units/Reel

BC846BPDW1T1/D

BC846BPDW1T1, BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1,

BC848CPDW1T1

ELECTRICAL CHARACTERISTICS (NPN) (T

= 25°C unless otherwise noted)

A

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

= 10 mA) BC846 Series

(I

C

Collector–Emitter Breakdown Voltage

= 10 µA, VEB = 0) BC846 Series

(I

C

Collector–Base Breakdown Voltage

(I

= 10 mA) BC846 Series

C

Emitter–Base Breakdown Voltage

= 1.0 mA) BC846 Series

(I

E

Collector Cutoff Current (VCB = 30 V)

(V

= 30 V, TA = 150°C)

CB

ON CHARACTERISTICS

DC Current Gain

(I

= 10 µA, VCE = 5.0 V) BC846B, BC847B, BC848B

C

BC847C, BC848C

BC847 Series
BC848 Series

BC847 Series
BC848 Series

BC847 Series
BC848 Series

BC847 Series
BC848 Series

V

(BR)CEO

V

(BR)CES

V

(BR)CBO

V

(BR)EBO

I

CBO

h

FE

65
45
30

80
50
30

80
50
30

6.0

6.0

5.0
—

—

—
—

—
—
—

—
—
—

—
—
—

—
—
—

—
—

150
270

—
—
—

—
—
—

—
—
—

—
—
—

15

5.0

—
—

V

V

V

V

nA
µA

—

= 2.0 mA, VCE = 5.0 V) BC846B, BC847B, BC848B

(I

C

BC847C, BC848C

Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Collector–Emitter Saturation Voltage (I

= 100 mA, IB = 5.0 mA)

C

Base–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Base–Emitter Saturation Voltage (I

= 100 mA, IB = 5.0 mA)

C

Base–Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)

Base–Emitter Voltage (I

= 10 mA, VCE = 5.0 V)

C

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(I

= 10 mA, VCE = 5.0 Vdc, f = 100 MHz)

C

Output Capacitance (VCB = 10 V, f = 1.0 MHz) C
Noise Figure (IC = 0.2 mA,

V

= 5.0 Vdc, RS = 2.0 kΩ, BC846B, BC847B, BC848B

CE

f = 1.0 kHz, BW = 200 Hz) BC847C, BC848C

V

CE(sat)

V

BE(sat)

V

BE(on)

NF

f

T

obo

200
420

—
—

—
—

580

—

290
520

—
—

0.7

0.9

660

—

475
800

0.25

0.6
—

—

700
770

V

V

mV

100 — — MHz

— — 4.5 pF

dB
—
—

—
—

10

4.0

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BC846BPDW1T1, BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1,

BC848CPDW1T1

ELECTRICAL CHARACTERISTICS (PNP) (T

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

= –10 mA) BC846 Series

(I

C

BC847 Series
BC848 Series

Collector–Emitter Breakdown Voltage

= –10 µA, VEB = 0) BC846 Series

(I

C

BC847 Series
BC848 Series

Collector–Base Breakdown Voltage

(I

= –10 mA) BC846 Series

C

BC847 Series
BC848 Series

Emitter–Base Breakdown Voltage

= –1.0 mA) BC846 Series

(I

E

BC847 Series
BC848 Series

Collector Cutoff Current (VCB = –30 V)

Collector Cutoff Current (V

= –30 V, TA = 150°C)

CB

ON CHARACTERISTICS

DC Current Gain

(I

= –10 µA, VCE = –5.0 V) BC846B, BC847B, BC848B

C

BC847C, BC848C

= 25°C unless otherwise noted)

A

V

(BR)CEO

V

(BR)CES

V

(BR)CBO

V

(BR)EBO

I

CBO

h

FE

–65
–45
–30

–80
–50
–30

–80
–50
–30

–5.0
–5.0
–5.0

—
—

—
—

—
—
—

—
—
—

—
—
—

—
—
—

—
—

150
270

—
—
—

—
—
—

—
—
—

—
—
—

–15

–4.0

—
—

V

V

V

V

nA
µA

—

= –2.0 mA, VCE = –5.0 V) BC846B, BC847B, BC848B

(I

C

BC847C, BC848C

Collector–Emitter Saturation Voltage

(I

= –10 mA, IB = –0.5 mA)

C

= –100 mA, IB = –5.0 mA)

(I

C

Base–Emitter Saturation Voltage

(I

= –10 mA, IB = –0.5 mA)

C

(I

= –100 mA, IB = –5.0 mA)

C

Base–Emitter On Voltage

(I

= –2.0 mA, VCE = –5.0 V)

C

= –10 mA, VCE = –5.0 V)

(I

C

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(I

= –10 mA, VCE = –5.0 Vdc, f = 100 MHz)

C

Output Capacitance

(V

= –10 V, f = 1.0 MHz)

CB

Noise Figure

(I

= –0.2 mA, VCE = –5.0 Vdc, RS = 2.0 kΩ,

C

f = 1.0 kHz, BW = 200 Hz)

V

CE(sat)

V

BE(sat)

V

BE(on)

C

200
420

—
—

—
—

–0.6

—

f

T

ob

100 — — MHz

— — 4.5 pF

290
520

—
—

–0.7
–0.9

—
—

475
800

–0.3

–0.65

—
—

–0.75
–0.82

NF — — 10 dB

V

V

V

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BC846BPDW1T1, BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1,

2.0

1.0

h

,

I

C

C

I

V

,

C

C

I

V

V

BC848CPDW1T1

TYPICAL NPN CHARACTERISTICS

N

1.5

1.0

URRENT GA

0.8

0.6

ZED D

0.4

NORMAL

0.3

FE

0.2

0.2 0.5 1.0 10 20

2.0 5.0

IC, COLLECTOR CURRENT (mAdc)

Figure 1. Normalized DC Current Gain

2.0

)

1.6

OLTAGE (

1.2

TTER

0.8

TOR–EM

OLLE

0.4

CE

0.02 1.0

IC =

10 mA

Figure 3. Collector Saturation Region

IC = 50 mA IC = 100 mA

IC =

20 mA

0.1
IB, BASE CURRENT (mA)

VCE = 10 V
T

= 25°C

A

50

IC = 200 mA

100

10020

200

TA = 25°C

0.9

V, VOLTAGE (VOLTS)

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1
0

V

@ IC/IB = 10

BE(sat)

V

@ VCE = 10 V

BE(on)

V

@ IC/IB = 10

CE(sat)

0.2 0.5 1.0 10 20
IC, COLLECTOR CURRENT (mAdc)

2.0

Figure 2. “Saturation” and “On” Voltages

1.0
–55°C to +125°CTA = 25°C

1.2

1.6

2.0

2.4

2.8

, TEMPERATURE COEFFICIENT (mV/ C)°θ

VB

0.2 1.0
IC, COLLECTOR CURRENT (mA)

10 100

Figure 4. Base–Emitter T emperature Coefficient

50

307.05.03.00.70.30.1

10070

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4

BC846BPDW1T1, BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1,

V

,

C

C

I

V

V

h

,

C

C

I

I

C,

C

P

CI

C

F

BC848CPDW1T1

TYPICAL NPN CHARACTERISTICS

10

7.0

)

5.0

E (p
TAN

3.0
A
A

2.0

1.0

0.4 0.6 1.0 10 20

ZED)

2.0
N (NORMAL

1.0

0.5
URRENT GA

D

0.2

FE

0.1 1.0

0.8 4.0 8.0

VCE = 5 V

= 25°C

T

A

0.2

C

ib

C

ob

2.0 6.0

VR, REVERSE VOLTAGE (VOL TS)

Figure 5. Capacitances

10 100

IC, COLLECTOR CURRENT (mA)

TA = 25°C

40

400
300

200

100

80
60

40
30

20

T

f , CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)

0.7 1.0 10 202.0
IC, COLLECTOR CURRENT (mAdc)

Figure 6. Current–Gain – Bandwidth Product

1.0
TA = 25°C

0.8

V

@ IC/IB = 10

BE(sat)

0.6

VBE @ VCE = 5.0 V

0.4

V, VOLTAGE (VOLTS)

0.2

V

@ IC/IB = 10

CE(sat)

0

0.5 2.0 5.0

0.2 1.0
IC, COLLECTOR CURRENT (mA)

10 200

VCE = 10 V
T

= 25°C

A

307.05.03.00.5

20 50 100

50

Figure 7. DC Current Gain

2.0

OLTS)

1.6

OLTAGE (

1.2

TTER

0.8

TOR–EM

0.4

OLLE

CE

0.02 1.0

20 mA

0.05 0.2 0.5 2.0 5.0

0.1

50 mA

IC =

10 mA

IB, BASE CURRENT (mA)

100 mA

TA = 25°C

200 mA

10020

Figure 9. Collector Saturation Region

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–1.0

–1.4

–1.8

–2.2

–2.6

, TEMPERATURE COEFFICIENT (mV/ C)°θ

VB

–3.0

0.5 5.0 20

0.2 2.0

Figure 10. Base–Emitter T emperature Coefficient

5

Figure 8. “On” Voltage

θVB for V

BE

–55°C to 125°C

1.0
IC, COLLECTOR CURRENT (mA)

10 200

50 100

BC846BPDW1T1, BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1,

VCE = –5.0 V
T

= 25°C

A

2.0

1.0

0.5

, DC CURRENT GAIN (NORMALIZED)

0.2

FE

h

–0.1 –1.0

–0.2

TYPICAL PNP CHARACTERISTICS — BC846

–2.0

IC, COLLECTOR CURRENT (AMP)

–10 –200

–5.0

–20

–50

–100

BC848CPDW1T1

–1.0

–0.8

–0.6

–0.4

V, VOLTAGE (VOLTS)

–0.2

0

–0.2 –1.0

TJ = 25°C

V

@ IC/IB = 10

BE(sat)

VBE @ VCE = –5.0 V

V

@ IC/IB = 10

CE(sat)

–0.5 –2.0 –5.0

IC, COLLECTOR CURRENT (mA)

–20 –50 –100

–10 –200

Figure 11. DC Current Gain

–2.0

–1.6

IC =

–10 mA

–1.2

–0.8

–0.4

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

CE

V

T

= 25°C

J

–0.05 –0.2 –0.5 –2.0 –5.0

–0.02 –1.0

–20 mA

–0.1

IB, BASE CURRENT (mA)

Figure 13. Collector Saturation Region

40

20

C

ib

–50 mA

–100 mA

TJ = 25°C

–200 mA

–100–20

Figure 12. “On” Voltage

–1.0

–1.4

–1.8

–2.2

–2.6

, TEMPERATURE COEFFICIENT (mV/ C)°θ

VB

–3.0

θVB for V

BE

–0.2 –2.0

–1.0

–0.5 –5.0 –20

IC, COLLECTOR CURRENT (mA)

–55°C to 125°C

–10 –200

Figure 14. Base–Emitter T emperature Coefficient

VCE = –5.0 V

500

200

–50 –100

10

8.0

6.0

C, CAPACITANCE (pF)

4.0

2.0
–0.1 –0.2 –1.0 –50

–0.5 –5.0 –20

–2.0 –10

VR, REVERSE VOLTAGE (VOL TS)

C

ob

Figure 15. Capacitance

100

50

20

T

f , CURRENT–GAIN – BANDWIDTH PRODUCT

–100

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6

–1.0 –10

IC, COLLECTOR CURRENT (mA)

–100

Figure 16. Current–Gain – Bandwidth Product

BC846BPDW1T1, BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1,

2.0

1.0

h

,

I

C

C

I

V

,

C

C

I

V

V

C,

C

P

CI

C

F

BC848CPDW1T1

TYPICAL PNP CHARACTERISTICS — BC847/BC848

–

N

URRENT GA

ZED D

NORMAL

FE

1.5

1.0

0.7

0.5

0.3

0.2

VCE = –10 V
T

= 25°C

A

–0.2

–0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –0.1

IC, COLLECTOR CURRENT (mAdc)

V, VOLTAGE (VOLTS)

–0.9
–0.8
–0.7
–0.6
–0.5

–0.4
–0.3
–0.2
–0.1

0

TA = 25°C

–0.2 –0.5

V

@ IC/IB = 10

BE(sat)

V

@ VCE = –10 V

BE(on)

V

@ IC/IB = 10

CE(sat)

–1.0

–2.0 –5.0

IC, COLLECTOR CURRENT (mAdc)

–10

–20 –50

–100

–2.0

)

–1.6

OLTAGE (

–1.2

TTER

–0.8

TOR–EM

OLLE

–0.4

CE

Figure 17. Normalized DC Current Gain

TA = 25°C

–10 mA

IC = –20 mA

–0.02 –1.0

–0.1

IB, BASE CURRENT (mA)

IC = –200 mAIC = –50 mAIC =

IC = –100 mA

, TEMPERATURE COEFFICIENT (mV/ C)°θ

VB

–100–20

Figure 19. Collector Saturation Region

)
E (p

TAN
A

A

10

C

7.0

5.0

3.0

2.0

1.0
–0.6 –1.0 –2.0 –4.0 –6.0 –10 –20 –30 –40

–0.4

VR, REVERSE VOLTAGE (VOL TS)

ib

TA = 25°C

C

ob

Figure 21. Capacitances

T

f , CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)

Figure 18. “Saturation” and “On” Voltages

1.0
–55°C to +125°C

1.2

1.6

2.0

2.4

2.8

–0.2

–1.0

IC, COLLECTOR CURRENT (mA)

–10 –100

Figure 20. Base–Emitter T emperature

Coefficient

400
300

200
150

100

80
60

40
30

20

–1.0 –2.0 –3.0 –5.0 –10 –20 –30 –50

–0.5

IC, COLLECTOR CURRENT (mAdc)

Figure 22. Current–Gain – Bandwidth Product

VCE = –10 V
T

= 25°C

A

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BC846BPDW1T1, BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1,

1.0
D = 0.5

0.2

0.1

0.1

0.05

0.02

0.01

0.01

r(t), TRANSIENT THERMAL

RESISTANCE (NORMALIZED)

0.001

–200

–100

–50

–10

, COLLECTOR CURRENT (mA)

–5.0

C

I

–2.0

SINGLE PULSE

–1.0

1.00

10 100 1.0 k 10 k 100 k

1 s

T

TA = 25°C

= 25°C

J

BC558
BC557
BC556

BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT

–5.0 –10 –30 –45 –65 –100

VCE, COLLECTOR–EMITTER VOLTAGE (V)

BC848CPDW1T1

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

t, TIME (ms)

Figure 23. Thermal Response

3 ms

The safe operating area curves indicate I
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated
by the applicable curve.

The data of Figure 14 is based upon T
is variable depending upon conditions. Pulse curves are valid
for duty cycles to 10% provided T
calculated from the data in Figure 13. At high case or ambient
temperatures, thermal limitations will reduce the power that can
be handled to values less than the limitations imposed by the
secondary breakdown.

Z

(t) = r(t) R

θ

JA

R

θ

JA

θ

JA

= 328°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T

– TC = P

2

J(pk)

(pk)

1

R

(t)

θ

JC

1.0 M

limits of the

C–VCE

= 150°C; TC or T

≤ 150°C. T

J(pk)

J(pk)

J(pk)

A

may be

Figure 24. Active Region Safe Operating Area

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BC846BPDW1T1, BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1,

BC848CPDW1T1

INFORMATION FOR USING THE SOT–363 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection

SOT–363

0.5 mm (min)

0.4 mm (min)

1.9 mm

SOT–363 POWER DISSIP ATION

The power dissipation of the SOT–363 is a function of
the pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by T
temperature of the die, R

, the maximum rated junction

J(max)

, the thermal resistance from

JA

θ

the device junction to ambient, and the operating
temperature, TA. Using the values provided on the data
sheet for the SOT–363 package, P

can be calculated as

D

follows:

PD =

J(max)

R

A

θ

JA

– T

T

The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device which
in this case is 150 milliwatts.

150°C – 25°C

PD =

833°C/W

= 150 milliwatts

The 833°C/W for the SOT–363 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of
150 milliwatts. There are other alternatives to achieving
higher power dissipation from the SOT–363 package.
Another alternative would be to use a ceramic substrate or
an aluminum core board such as Thermal Clad. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.

interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.

0.65 mm 0.65 mm

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.

• Always preheat the device.

• The delta temperature between the preheat and

soldering should be 100°C or less.*

• When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.

• The soldering temperature and time shall not exceed

260°C for more than 10 seconds.

• When shifting from preheating to soldering, the

maximum temperature gradient shall be 5°C or less.

• After soldering has been completed, the device should

be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.

• Mechanical stress or shock should not be applied

during cooling.

* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.

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9

Notes

BC846BPDW1T1, BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1,

BC848CPDW1T1

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10

BC846BPDW1T1, BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1,

BC848CPDW1T1

P ACKAGE DIMENSIONS

SOT–363/SC–88

CASE 419B–01

ISSUE G

A

G

654

S

123

V

–B–

MM

D

6 PL

B0.2 (0.008)

N

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

INCHES

DIMAMIN MAX MIN MAX

B 1.15 1.350.045 0.053
C 0.80 1.100.031 0.043
D 0.10 0.300.004 0.012
G 0.65 BSC0.026 BSC
H ––– 0.10–––0.004
J 0.10 0.250.004 0.010
K 0.10 0.300.004 0.012
N 0.20 REF0.008 REF
S 2.00 2.200.079 0.087
V 0.30 0.400.012 0.016

MILLIMETERS

1.80 2.200.071 0.087

J

C

H

K

STYLE 1:

PIN 1. EMITTER 2

2. BASE 2

3. COLLECTOR 1

4. EMITTER 1

5. BASE 1

6. COLLECTOR 2

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BC846BPDW1T1, BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1,

BC848CPDW1T1

Thermal Clad is a trademark of the Bergquist Company .

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