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BC847BM3T5G
Preferred Device
General Purpose Transistor
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−723 package which is
designed for low power surface mount applications.
• This is a Pb−Free Device
MAXIMUM RATINGS (T
Rating
Collector−Emitter Voltage V
Collector−Base Voltage V
Emitter−Base Voltage V
Collector Current − Continuous I
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation,
FR−4 Board (Note 1)
T
= 25°C
A
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Device Dissipation,
FR−4 Board (Note 2)
= 25°C
T
A
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
Junction and Storage
Temperature Range
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 × 1.0 Inch Pad
= 25°C)
A
Symbol Max Unit
CEO
CBO
EBO
P
R
P
R
TJ, T
C
D
JA
D
JA
stg
45 V
50 V
6.0 V
100 mAdc
260
2.0
480 °C/W
600
4.8
205 °C/W
−55 to +150 °C
mW
mW/°C
mW
mW/°C
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COLLECTOR
3
1
BASE
2
EMITTER
MARKING
DIAGRAM
3
1
SOT−723
CASE 631AA
2
1F M
STYLE 1
1F = Device Code
M = Date Code
ORDERING INFORMATION
Device Package Shipping
BC847BM3T5G SOT−723 8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
†
Semiconductor Components Industries, LLC, 2005
March, 2005 − Rev. 0
1 Publication Order Number:
BC847BM3/D
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BC847BM3T5G
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
= 10 mA)
C
Collector−Emitter Breakdown Voltage
(I
= 10 A, VEB = 0)
C
Collector−Base Breakdown Voltage
(I
= 10 A)
C
Emitter−Base Breakdown Voltage
(I
= 1.0 A)
E
Collector Cutoff Current (VCB = 30 V)
(V
= 30 V, TA = 150°C)
CB
ON CHARACTERISTICS
DC Current Gain
(I
= 10 A, VCE = 5.0 V)
C
= 2.0 mA, VCE = 5.0 V)
(I
C
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector−Emitter Saturation Voltage (I
= 100 mA, IB = 5.0 mA)
C
Base−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base−Emitter Saturation Voltage (I
= 100 mA, IB = 5.0 mA)
C
Base−Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base−Emitter Voltage (I
= 10 mA, VCE = 5.0 V)
C
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
= 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
(I
C
Output Capacitance
(V
= 10 V, f = 1.0 MHz)
CB
Noise Figure
(I
= 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz)
C
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
h
V
CE(sat)
V
BE(sat)
V
BE(on)
f
C
obo
NF
FE
45 − −
V
V
50 − −
V
50 − −
V
6.0 − −
−
−
−
−
15
5.0
nA
A
−
−
200
−
−
−
−
580
−
T
150
290
−
−
0.7
0.9
660
−
−
450
0.25
0.6
−
−
700
770
V
V
mV
MHz
100 − −
pF
− − 4.5
dB
− − 10
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BC847BM3T5G
2.0
1.5
1.0
0.8
0.6
0.4
, NORMALIZED DC CURRENT GAIN
0.3
FE
h
0.2
0.2 0.5 1.0 10 20
2.0 5.0
IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
2.0
1.6
1.2
IC =
10 mA
0.8
IC = 50 mA IC = 100 mA
IC =
20 mA
VCE = 10 V
T
= 25°C
A
50
IC = 200 mA
100
200
V, VOLTAGE (VOLTS)
1.0
T
= 25°C
0.9
A
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.2 0.5 1.0 10 20
V
@ IC/IB = 10
BE(sat)
V
@ VCE = 10 V
BE(on)
V
@ IC/IB = 10
CE(sat)
2.0
IC, COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
1.0
−55°C to +125°CTA = 25°C
1.2
1.6
2.0
2.4
50
307.05.03.00.70.30.1
10070
0.4
, COLLECTOR−EMITTER VOLTAGE (V)
CE
V
0.02 1.0
0.1
IB, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
10020
2.8
, TEMPERATURE COEFFICIENT (mV/ C)°θ
VB
0.2 1.0
IC, COLLECTOR CURRENT (mA)
10 100
Figure 4. Base−Emitter Temperature Coefficient
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BC847BM3T5G
BC847
10
7.0
5.0
3.0
2.0
C, CAPACITANCE (pF)
1.0
0.4 0.6 1.0 10 20
0.8 4.0 8.0
C
ib
C
ob
2.0 6.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
T
= 25°C
A
400
300
200
100
80
60
40
30
20
T
f, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)
40
0.7 1.0 10 202.0
IC, COLLECTOR CURRENT (mAdc)
VCE = 10 V
= 25°C
T
A
307.05.03.00.5
50
Figure 6. Current−Gain − Bandwidth Product
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b1
BC847BM3T5G
PACKAGE DIMENSIONS
SOT−723
CASE 631AA−01
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
−X−
D
3
1
2
e
−Y−
E
b
2X
X0.08 (0.0032) Y
A
H
L
E
C
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MILLIMETERS
DIM MIN NOM MAX
A 0.45 0.50 0.55
b 0.15 0.21 0.27
b1 0.25 0.31 0.37
C 0.07 0.12 0.17
D 1.15 1.20 1.25
E 0.75 0.80 0.85
e 0.40 BSC
H 1.15 1.20 1.25
E
L 0.15 0.20 0.25
INCHES
MIN NOM MAX
0.018 0.020 0.022
0.0059 0.0083 0.0106
0.010 0.012 0.015
0.0028 0.0047 0.0067
0.045 0.047 0.049
0.03 0.032 0.034
0.016 BSC
0.045 0.047 0.049
0.0059 0.0079 0.0098
0.40
0.0157
0.40
0.0157
1.0
0.039
0.40
0.0157
0.40
0.0157
0.40
0.0157
SCALE 20:1
inches
mm
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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BC847BM3T5G
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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For additional information, please contact your
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