Datasheet BC 847B INF Datasheet

Page 1
NPN Silicon AF Transistors
For AF input stages and driver applications
BC 846 ... BC 850
High current gain
3
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BC 856, BC 857, BC 858
1
Type Marking Pin Configuration Package
BC 846A
BC 846B
BC 847A
1As
1Bs
1Es
1 = B
B = 1
B = 1
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
SOT-23
SOT-23
SOT-23
2
VPS05161
BC 847B
BC 847C
BC 848A
BC 848B
BC 848C
BC 849B
BC 849C
BC 850B
BC 850C
1Fs
1Gs
1Js
1Ks
1Ls
2Bs
2Cs
2Fs
2Gs
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
1 Nov-11-1999
Page 2
Maximum Ratings
g
BC 846 ... BC 850
Parameter
Symbol BC 846 BC 847
Collector-emitter voltage V
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
DC collector current I
Peak collector current I
Peak base current I
Peak emitter current 200I
Total power dissipation, TS = 71 °C P
Junction temperature T
Storage temperature T
Thermal Resistance
Junction ambient
1)
R
CEO
CBO
CES
EBO
C
CM
BM
EM
tot
j
st
thJA
BC 850
BC 848
BC 849
Unit
65 45 30 V
80 50 30
80 50 30
6 6 5
100 mA
200 mA
200
330 mW
150 °C
-65 ... 150
310
K/W
Junction - soldering point R
thJS
240
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
= 10 mA, IB = 0
C
Collector-base breakdown voltage
I
= 10 µA, IB = 0
C
BC 846
BC 847/850
BC 848/849
BC 846
BC 847/850
BC 848/849
V
(BR)CEO
V
(BR)CBO
65
45
30
80
50
30
-
-
-
-
-
-
V
-
-
-
-
-
-
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
2 Nov-11-1999
Page 3
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BC 846 ... BC 850
Parameter
DC Characteristics
Collector-emitter breakdown voltage
= 10 µA, VBE = 0
I
C
Emitter-base breakdown voltage
= 1 µA, IC = 0
I
E
= 40 V, IE = 0
V
CB
Collector cutoff current
V
= 30 V, IE = 0 , TA = 150 °C
CB
DC current gain 1)
= 10 µA, VCE = 5 V
I
C
BC 846
BC 847/850
BC 848/849
BC 846/847
BC 848-850
-group A
h
FE
-group B
h
FE
h
-group C
FE
Symbol Values Unit
max.typ.min.
V
(BR)CES
V
(BR)EBO
CBO
CBO
h
FE
80
50
30
6
5
- - 15Collector cutoff current
-
-
-
-
-
-
-
-
140
250
480
V
-
-
-
-
-
nAI
5--I
µA
-
-
-
-
DC current gain 1)
= 2 mA, VCE = 5 V
I
C
Collector-emitter saturation voltage1)
= 10 mA, IB = 0.5 mA
I
C
I
= 100 mA, IB = 5 mA
C
Base-emitter saturation voltage 1)
I
= 10 mA, IB = 0.5 mA
C
= 100 mA, IB = 5 mA
I
C
Base-emitter voltage 1)
= 2 mA, VCE = 5 V
I
C
= 10 mA, VCE = 5 V
I
C
1) Pulse test: t 300µs, D = 2%
h
FE
h
FE
h
FE
-group A
-group B
-group C
h
FE
V
CEsat
V
BEsat
V
BE(ON)
110
200
420
-
-
-
-
580
-
180
290
520
90
200
700
900
660
-
220
450
800
250
600
-
-
700
770
mV
3 Nov-11-1999
Page 4
BC 846 ... BC 850
Electrical Characteristics at T
= 25°C, unless otherwise specified.
A
Parameter
AC Characteristics
= 10 mA, VCE = 5 V, f = 100 MHz
I
C
= 10 V, f = 1 MHz
V
CB
= 0.5 V, f = 1 MHz
V
EB
Short-circuit input impedance
= 2 mA, VCE = 5 V, f = 1 kHz
I
C
Open-circuit reverse voltage transf.ratio
I
= 2 mA, VCE = 5 V, f = 1 kHz
C
Values UnitSymbol
min. max.typ.
f
T
C
cb
eb
-gr.A
h
FE
h
-gr.B
FE
-gr.C
h
FE
h
-gr.A
FE
-gr.B
h
FE
h
-gr.C
FE
h
h
11e
12e
- MHz-Transition frequency
-Emitter-base capacitance
-
-
-
-
-
-
250
3-
8 -C
2.7
4.5
8.7
1.5
2
3
- pFCollector-base capacitance
k
-
-
-
-4
10
-
-
-
Short-circuit forward current transf.ratio
= 2 mA, VCE = 5 V, f = 1 kHz
I
C
Open-circuit output admittance
I
= 2 mA, VCE = 5 V, f = 1 kHz
C
Noise figure
I
= 100 µA, VCE = 5 V, RS = 1 k,
C
f = 1 kHz, f = 200 Hz
= 200 µA, VCE = 5 V, RS = 2 k,
I
C
f = 10 ... 50 Hz
-gr.A
h
FE
h
-gr.B
FE
-gr.C
h
FE
h
-gr.A
FE
-gr.B
h
FE
h
-gr.C
FE
BC 849
BC 850
BC 850
h
h
V
21e
22e
n
-
-
-
200
330
600
-
-
-
18
30
60
- -
-
-
-
-
µS
-
-
-
41.2-F dB
0.135 µVEquivalent noise voltage
4 Nov-11-1999
Page 5
BC 846 ... BC 850
)
Total power dissipation P
tot
* Package mounted on epoxy
400
mW
P
tot
300
T
200
100
0
0
AS
= f (TA*;TS)
EHP00360
T
˚C
T T;
AS
Collector-base capacitance C
Emitter-base capacitance C
BC 846...850
12 pF
C
CB0
(
)
C
EB0
CB
EB
= f (V
= f (V
EHP00361
CBO
EBO
)
10
8
C
EB
6
4
C
CB
2
15050 100
0
-1 0 1
10
5
10 10
V
CB0
V
)
(
V
EB0
Permissible pulse load
P
totmax
P
tot max
totPDC
10
10
10
10
/ P
5
5
10
= f (tp)
totDC
3
2
1
0
-6
10-510-410-310
=
D
Transition frequency f
V
= 5V
CE
EHP00362
t
p
t
p
T
T
D
=
f
T
10
MHz
5
3
= f (IC)
T
EHP00363
0
0.005
0.01
0.02
0.05
10
2
0.1
0.2
-2
0.5
0
10
s
t
p
5
1
10
-1 0 1 2
10 10 10 10
5
5
mA
Ι
C
5 Nov-11-1999
Page 6
BC 846 ... BC 850
Collector cutoff current I
V
= 30V
CB
4
10
nA
Ι
CB0
3
10
5
2
10
5
1
10
5
0
10
0 50 100 150
CBO
= f (TA)
EHP00415
max
typ
˚C
T
Collector-emitter saturation voltage
I
= f (V
C
2
10
mA
Ι
C
1
10
5
0
10
5
-1
10
0
A
), hFE = 20
CEsat
100
C
25
C
-50
C
0.1 0.2 0.4
EHP00367
0.3 0.5
V
V
CEsat
DC current gain h
V
= 5V
CE
3
10
5
100
h
FE
2
10
5
1
10
5
0
10
10 10 10 10
C
25
C
-50
C
-2
-1
555
= f (IC)
FE
10
Base-emitter saturation voltage
I
= f (V
C
EHP00365
2
10
Ι
C
mA
1
10
5
0
10
5
-1
0
12
mA
Ι
C
10
0
), hFE = 20
BEsat
C
100
C C
25
-50
C
0.2 0.4 0.8
EHP00364
0.6 V 1.2
V
BEsat
6 Nov-11-1999
Page 7
BC 846 ... BC 850
h parameter h
V
= 5V
CE
2
10
5
h
e
h
11e
1
10
5
h
12e
0
10
h
21e
5
h
22e
-1
10
-1 0 1
10 10 10
= f (IC) normalized
e
V
= 5 V
CE
5
EHP00368
mA
Ι
C
h parameter h
I
= 2mA
C
2.0
h
e
1.5
1.0
0.5
0
0102030
= f (VCE) normalized
e
Ι
=
C
h
h
h
h
EHP00369
2 mA
21
e
e
11
e
12
e
22
V
V
CE
Noise figure F = f (V
I
= 0.2mA, RS = 2k, f = 1kHz
C
BC 846...850 EHP00370
20
dB
F
CE
)
15
10
5
0
-1 0 1 2
10 10 10 10
5
Noise figure F = f (f)
I
= 0.2mA, VCE = 5V, RS = 2k
C
BC 846...850 EHP00371
20
dB
F
15
10
5
0
V
V
CE
-2 -1 1 2
10 10 10 10
10
0
kHz
f
7 Nov-11-1999
Page 8
BC 846 ... BC 850
Noise figure F = f (I
V
= 5V, f = 120Hz
CE
BC 846...850 EHP00372
20
dB
F
15
R
= 1 M 100 k 10 k
S
10
5
0
-3 -2 0 1
10 10 10 10
ΩΩΩ
)
C
500
1 k
-1
10
mA
Ι
C
Noise figure F = f (I
V
= 5V, f = 1kHz
CE
BC 846...850 EHP00373
20
dB
F
15
10
1 k
5
0
-3 -2 0 1
10 10 10 10
R
)
C
= 1 M
S
100 k
ΩΩΩ
-1
10
10 k
Ι
500
mA
C
Noise figure F = f (I
V
= 5V, f = 10kHz
CE
BC 846...850 EHP00374
20
dB
F
15
10
5
0
10 10 10 10
500
1 k
-3 -2 0 1
R
C
S
)
= 1 M
10
-1
100 k
10 k
mA
Ι
C
8 Nov-11-1999
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