Datasheet BC 847B INF Datasheet

NPN Silicon AF Transistors

• For AF input stages and driver applications

BC 846 ... BC 850

• High current gain

3

• Low collector-emitter saturation voltage

• Low noise between 30 Hz and 15 kHz

• Complementary types: BC 856, BC 857, BC 858

BC 859, BC 860 (PNP)

1

Type Marking Pin Configuration Package

BC 846A

BC 846B

BC 847A

1As

1Bs

1Es

1 = B

B = 1

2 = E

3 = C

SOT-23

2

VPS05161

BC 847B

BC 847C

BC 848A

BC 848B

BC 848C

BC 849B

BC 849C

BC 850B

BC 850C

1Fs

1Gs

1Js

1Ks

1Ls

2Bs

2Cs

2Fs

2Gs

1 = B

2 = E

3 = C

SOT-23

1 Nov-11-1999

Maximum Ratings

g

BC 846 ... BC 850

Parameter

Symbol BC 846 BC 847

Collector-emitter voltage V

Collector-base voltage V

Collector-emitter voltage V

Emitter-base voltage V

DC collector current I

Peak collector current I

Peak base current I

Peak emitter current 200I

Total power dissipation, TS = 71 °C P

Junction temperature T

Storage temperature T

Thermal Resistance

Junction ambient

1)

R

CEO

CBO

CES

EBO

C

CM

BM

EM

tot

j

st

thJA

BC 850

BC 848

BC 849

Unit

65 45 30 V

80 50 30

6 6 5

100 mA

200 mA

200

330 mW

150 °C

-65 ... 150

≤310

K/W

Junction - soldering point R

thJS

≤240

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

I

= 10 mA, IB = 0

C

Collector-base breakdown voltage

I

= 10 µA, IB = 0

C

BC 846

BC 847/850

BC 848/849

BC 846

BC 847/850

BC 848/849

V

(BR)CEO

V

(BR)CBO

65

45

30

80

50

30

-

V

-

1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu

2 Nov-11-1999

Electrical Characteristics at TA = 25°C, unless otherwise specified.

BC 846 ... BC 850

Parameter

DC Characteristics

Collector-emitter breakdown voltage

= 10 µA, VBE = 0

I

C

Emitter-base breakdown voltage

= 1 µA, IC = 0

I

E

= 40 V, IE = 0

V

CB

Collector cutoff current

V

= 30 V, IE = 0 , TA = 150 °C

CB

DC current gain 1)

= 10 µA, VCE = 5 V

I

C

BC 846

BC 847/850

BC 848/849

BC 846/847

BC 848-850

-group A

h

FE

-group B

h

FE

h

-group C

FE

Symbol Values Unit

max.typ.min.

V

(BR)CES

V

(BR)EBO

CBO

h

FE

80

50

30

6

5

- - 15Collector cutoff current

-

140

250

480

V

-

nAI

5--I

µA

-

DC current gain 1)

= 2 mA, VCE = 5 V

I

C

Collector-emitter saturation voltage1)

= 10 mA, IB = 0.5 mA

I

C

I

= 100 mA, IB = 5 mA

C

Base-emitter saturation voltage 1)

I

= 10 mA, IB = 0.5 mA

C

= 100 mA, IB = 5 mA

I

C

Base-emitter voltage 1)

= 2 mA, VCE = 5 V

I

C

= 10 mA, VCE = 5 V

I

C

1) Pulse test: t ≤ 300µs, D = 2%

h

FE

h

FE

h

FE

-group A

-group B

-group C

h

FE

V

CEsat

V

BEsat

V

BE(ON)

110

200

420

-

580

-

180

290

520

90

200

700

900

660

-

220

450

800

250

600

-

700

770

mV

3 Nov-11-1999

BC 846 ... BC 850

Electrical Characteristics at T

= 25°C, unless otherwise specified.

A

Parameter

AC Characteristics

= 10 mA, VCE = 5 V, f = 100 MHz

I

C

= 10 V, f = 1 MHz

V

CB

= 0.5 V, f = 1 MHz

V

EB

Short-circuit input impedance

= 2 mA, VCE = 5 V, f = 1 kHz

I

C

Open-circuit reverse voltage transf.ratio

I

= 2 mA, VCE = 5 V, f = 1 kHz

C

Values UnitSymbol

min. max.typ.

f

T

C

cb

eb

-gr.A

h

FE

h

-gr.B

FE

-gr.C

h

FE

h

-gr.A

FE

-gr.B

h

FE

h

-gr.C

FE

h

11e

12e

- MHz-Transition frequency

-Emitter-base capacitance

-

250

3-

8 -C

2.7

4.5

8.7

1.5

2

3

- pFCollector-base capacitance

kΩ

-

-4

10

-

Short-circuit forward current transf.ratio

= 2 mA, VCE = 5 V, f = 1 kHz

I

C

Open-circuit output admittance

I

= 2 mA, VCE = 5 V, f = 1 kHz

C

Noise figure

I

= 100 µA, VCE = 5 V, RS = 1 kΩ,

C

f = 1 kHz, ∆ f = 200 Hz

= 200 µA, VCE = 5 V, RS = 2 kΩ,

I

C

f = 10 ... 50 Hz

-gr.A

h

FE

h

-gr.B

FE

-gr.C

h

FE

h

-gr.A

FE

-gr.B

h

FE

h

-gr.C

FE

BC 849

BC 850

h

V

21e

22e

n

-

200

330

600

-

18

30

60

- -

-

µS

-

41.2-F dB

0.135 µVEquivalent noise voltage

4 Nov-11-1999

BC 846 ... BC 850

)

Total power dissipation P

tot

* Package mounted on epoxy

400

mW

P

tot

300

T

200

100

0

AS

= f (TA*;TS)

EHP00360

T

˚C

T T;

AS

Collector-base capacitance C

Emitter-base capacitance C

BC 846...850

12 pF

C

CB0

(

)

C

EB0

CB

EB

= f (V

EHP00361

CBO

EBO

)

10

8

C

EB

6

4

C

CB

2

15050 100

0

-1 0 1

10

5

10 10

V

CB0

V

)

(

V

EB0

Permissible pulse load

P

totmax

P

tot max

totPDC

10

/ P

5

10

= f (tp)

totDC

3

2

1

0

-6

10-510-410-310

=

D

Transition frequency f

V

= 5V

CE

EHP00362

t

p

t

p

T

D

=

f

T

10

MHz

5

3

= f (IC)

T

EHP00363

0

0.005

0.01

0.02

0.05

10

2

0.1

0.2

-2

0.5

0

10

s

t

p

5

1

10

-1 0 1 2

10 10 10 10

5

mA

Ι

C

5 Nov-11-1999

BC 846 ... BC 850

Collector cutoff current I

V

= 30V

CB

4

10

nA

Ι

CB0

3

10

5

2

10

5

1

10

5

0

10

0 50 100 150

CBO

= f (TA)

EHP00415

max

typ

˚C

T

Collector-emitter saturation voltage

I

= f (V

C

2

10

mA

Ι

C

1

10

5

0

10

5

-1

10

0

A

), hFE = 20

CEsat

100

C

25

C

-50

C

0.1 0.2 0.4

EHP00367

0.3 0.5

V

CEsat

DC current gain h

V

= 5V

CE

3

10

5

100

h

FE

2

10

5

1

10

5

0

10

10 10 10 10

C

25

C

-50

C

-2

-1

555

= f (IC)

FE

10

Base-emitter saturation voltage

I

= f (V

C

EHP00365

2

10

Ι

C

mA

1

10

5

0

10

5

-1

0

12

mA

Ι

C

10

0

), hFE = 20

BEsat

C

100

C C

25

-50

C

0.2 0.4 0.8

EHP00364

0.6 V 1.2

V

BEsat

6 Nov-11-1999

BC 846 ... BC 850

h parameter h

V

= 5V

CE

2

10

5

h

e

h

11e

1

10

5

h

12e

0

10

h

21e

5

h

22e

-1

10

-1 0 1

10 10 10

= f (IC) normalized

e

V

= 5 V

CE

5

EHP00368

mA

Ι

C

h parameter h

I

= 2mA

C

2.0

h

e

1.5

1.0

0.5

0

0102030

= f (VCE) normalized

e

Ι

=

C

h

EHP00369

2 mA

21

e

11

e

12

e

22

V

CE

Noise figure F = f (V

I

= 0.2mA, RS = 2kΩ, f = 1kHz

C

BC 846...850 EHP00370

20

dB

F

CE

)

15

10

5

0

-1 0 1 2

10 10 10 10

5

Noise figure F = f (f)

I

= 0.2mA, VCE = 5V, RS = 2kΩ

C

BC 846...850 EHP00371

20

dB

F

15

10

5

0

V

CE

-2 -1 1 2

10 10 10 10

10

0

kHz

f

7 Nov-11-1999

BC 846 ... BC 850

Noise figure F = f (I

V

= 5V, f = 120Hz

CE

BC 846...850 EHP00372

20

dB

F

15

R

= 1 M 100 k 10 k

S

10

5

0

-3 -2 0 1

10 10 10 10

ΩΩΩ

)

C

Ω

500

Ω

1 k

-1

10

mA

Ι

C

Noise figure F = f (I

V

= 5V, f = 1kHz

CE

BC 846...850 EHP00373

20

dB

F

15

10

Ω

1 k

5

0

-3 -2 0 1

10 10 10 10

R

)

C

= 1 M

S

100 k

ΩΩΩ

-1

10

10 k

Ι

500

mA

C

Ω

Noise figure F = f (I

V

= 5V, f = 10kHz

CE

BC 846...850 EHP00374

20

dB

F

15

10

5

0

10 10 10 10

500

Ω

1 k

-3 -2 0 1

R

C

S

)

= 1 M

10

Ω

-1

100 k

10 k

mA

Ι

C

Ω

8 Nov-11-1999