Datasheet BC846BDW1T1-D Datasheet (ON Semiconductor)

BC846BDW1T1G,
BC847BDW1T1G,
BC848CDW1T1G

Dual General Purpose
Transistors

NPN Duals

http://onsemi.com

These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.

Features

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating Symbol BC846 BC847 BC848 Unit

Collector−Emitter Voltage V

Collector−Base Voltage V

Emitter−Base Voltage V

Collector Current −
Continuous

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

CEO

CBO

EBO

I

C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation

Per Device
FR−5 Board (Note 1)
TA = 25°C
Derate Above 25°C

Thermal Resistance,

Junction to Ambient

Junction and Storage

Temperature Range

1. FR−5 = 1.0 x 0.75 x 0.062 in

P

R

TJ, T

q

65 45 30 V

80 50 30 V

6.0 6.0 5.0 V

100 100 100 mAdc

D

JA

stg

380
250

3.0

328 °C/W

−55 to +150 °C

mW

mW/°C

(3)

Q

1

(4) (5) (6)

(1)(2)

Q

2

MARKING

6

1

SOT−363

CASE 419B

STYLE 1

1x = Specific Device Code
x = B, F, G, L
M = Date Code
G = Pb−Free Package

(Note: Microdot may be in either location)

DIAGRAM

1x MG

G

ORDERING INFORMATION

See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.

© Semiconductor Components Industries, LLC, 2009

October, 2009 − Rev. 6

1 Publication Order Number:

BC846BDW1T1/D

BC846BDW1T1G, BC847BDW1T1G, BC848CDW1T1G

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = 10 mA) BC846 Series

BC847 Series
BC848 Series

Collector−Emitter Breakdown Voltage

(IC = 10 mA, VEB = 0) BC846 Series

BC847 Series
BC848 Series

Collector−Base Breakdown Voltage

(IC = 10 mA) BC846 Series

BC847 Series
BC848 Series

Emitter−Base Breakdown Voltage

(IE = 1.0 mA) BC846 Series

BC847 Series
BC848 Series

Collector Cutoff Current (VCB = 30 V)

(VCB = 30 V, TA = 150°C)

ON CHARACTERISTICS

DC Current Gain

(IC = 10 mA, VCE = 5.0 V) BC846B, BC847B,

BC847C, BC848C

V

(BR)CEO

V

(BR)CES

V

(BR)CBO

V

(BR)EBO

I

CBO

h

FE

65
45
30

80
50
30

80
50
30

6.0

6.0

5.0

−

−

−

−

−

−

V

V

−

−

−

−

−

−

V

−

−

−

−

−

−

V

−

−

−

−

−

−

−

15

5.0

−

−

−

nA
mA

−

−

−

150
270

−

−

(IC = 2.0 mA, VCE = 5.0 V) BC846B, BC847B,

BC847C, BC848C

Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Collector−Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)

Base − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)

Base − Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)

Base − Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)

Base − Emitter Voltage (IC = 10 mA, VCE = 5.0 V)

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)

Output Capacitance (VCB = 10 V, f = 1.0 MHz) C

Noise Figure

(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW,f = 1.0 kHz, BW = 200 Hz)

V

CE(sat)

V

BE(sat)

V

BE(on)

NF

f

T

obo

200
420

−

−

−

−

580

−

290
520

−

−

0.7

0.9

660

−

450
800

0.25

0.6

−

−

700
770

V

V

mV

100 − − MHz

− − 4.5 pF

dB

− − 10

http://onsemi.com

2

BC846BDW1T1G, BC847BDW1T1G, BC848CDW1T1G

TYPICAL CHARACTERISTICS − BC847 SERIES & BC848 SERIES

2.0

1.5

1.0

0.8

0.6

0.4

, NORMALIZED DC CURRENT GAIN

0.3

FE

h

0.2

0.2 0.5 1.0 10 20

2.0 5.0

IC, COLLECTOR CURRENT (mAdc)

Figure 1. Normalized DC Current Gain

2.0

1.6

1.2
IC =

10 mA

0.8

IC = 50 mA IC = 100 mA

IC =

20 mA

VCE = 10 V
T

= 25°C

A

50

IC = 200 mA

100

200

V, VOLTAGE (VOLTS)

1.0
TA = 25°C

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

V

@ IC/IB = 10

BE(sat)

V

@ VCE = 10 V

BE(on)

V

@ IC/IB = 10

CE(sat)

0.2 0.5 1.0 10 20

IC, COLLECTOR CURRENT (mAdc)

2.0

Figure 2. “Saturation” and “On” Voltages

1.0

-55°C to +125°CTA = 25°C

1.2

1.6

2.0

2.4

50

307.05.03.00.70.30.1

10070

0.4

, COLLECTOR-EMITTER VOLTAGE (V)

CE

V

0.02 1.0

0.1

IB, BASE CURRENT (mA)

Figure 3. Collector Saturation Region

10

7.0

5.0

3.0

2.0

C, CAPACITANCE (pF)

1.0

0.4 0.6 1.0 10 20

0.8 4.0 8.0

C

ib

C

ob

2.0 6.0

VR, REVERSE VOLTAGE (VOLTS)

Figure 5. Capacitances

TA = 25°C

10020

2.8

, TEMPERATURE COEFFICIENT (mV/ C)°θ

VB

0.2 1.0

IC, COLLECTOR CURRENT (mA)

10 100

Figure 4. Base−Emitter Temperature Coefficient

400

300

200

100

80

60

40

30

20

T

f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)

40

0.7 1.0 10 202.0

IC, COLLECTOR CURRENT (mAdc)

VCE = 10 V
TA = 25°C

307.05.03.00.5

50

Figure 6. Current−Gain − Bandwidth Product

http://onsemi.com

3

VCE = 5 V

= 25°C

T

A

2.0

1.0

0.5

, DC CURRENT GAIN (NORMALIZED)

0.2

FE

h

0.1 1.0

0.2

BC846BDW1T1G, BC847BDW1T1G, BC848CDW1T1G

TYPICAL CHARACTERISTICS − BC846 SERIES

1.0

TA = 25°C

0.8
V

@ IC/IB = 10

BE(sat)

0.6
VBE @ VCE = 5.0 V

0.4

V, VOLTAGE (VOLTS)

0.2

V

@ IC/IB = 10

CE(sat)

10 100

IC, COLLECTOR CURRENT (mA)

0

0.2 1.0

0.5 2.0 5.0

IC, COLLECTOR CURRENT (mA)

10 200

20 50 100

Figure 7. Normalized DC Current Gain

2.0

1.6

20 mA

1.2

0.8

0.4

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

V

0.02 1.0

0.1

0.05 0.2 0.5 2.0 5.0

50 mA

IC =

10 mA

IB, BASE CURRENT (mA)

Figure 9. Collector Saturation Region

40

20

10

Figure 8. “On” Voltage

-1.0

TA = 25°C

-1.4

100 mA

200 mA

10020

-1.8

-2.2

-2.6

, TEMPERATURE COEFFICIENT (mV/ C)°θ

VB

-3.0

0.2 2.0

0.5 5.0

qVB for V

BE

-55°C to 125°C

1.0

IC, COLLECTOR CURRENT (mA)

10 200

50 100

20

Figure 10. Base−Emitter Temperature Coefficient

TA = 25°C

C

ib

500

200

100

VCE = 5 V
TA = 25°C

6.0

C, CAPACITANCE (pF)

4.0

2.0

0.1 0.2 1.0 50

0.5 5.0 20

VR, REVERSE VOLTAGE (VOLTS)

C

ob

2.0 10

Figure 11. Capacitance

50

20

T

f, CURRENT-GAIN - BANDWIDTH PRODUCT

100

http://onsemi.com

4

1.0 10 50

IC, COLLECTOR CURRENT (mA)

5.0

100

Figure 12. Current−Gain − Bandwidth Product

1.0
D = 0.5

0.2

0.1

0.1

0.05

0.02

0.01

0.01

r(t), TRANSIENT THERMAL

RESISTANCE (NORMALIZED)

SINGLE PULSE

0.001

BC846BDW1T1G, BC847BDW1T1G, BC848CDW1T1G

Z

q

JA

R

q

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

1.00

10 100 1.0k 10k 100k

2

t, TIME (ms)

Figure 13. Thermal Response

JA

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T

J(pk)

(t) = r(t) R

q

JA

= 3285C/W MAX

1

− TC = P

(pk)

R

(t)

q

JC

1.0M

-200

-100

-50

TA = 25°C

T

J

1 s

= 25°C

3 ms

The safe operating area curves indicate IC−VCE limits
of the transistor that must be observed for reliable
operation. Collector load lines for specific circuits must
fall below the limits indicated by the applicable curve.

The data of Figure 14 is based upon T

= 150°C; T

J(pk)

C

or TA is variable depending upon conditions. Pulse
curves are valid for duty cycles to 10% provided T
150°C. T

may be calculated from the data in

J(pk)

Figure 13. At high case or ambient temperatures,
thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by the
secondary breakdown.

-10

, COLLECTOR CURRENT (mA)

-5.0

C

I

-2.0

-1.0

BC558
BC557
BC556

BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT

-5.0 -10 -30 -45 -65 -100

VCE, COLLECTOR-EMITTER VOLTAGE (V)

Figure 14. Active Region Safe Operating Area

ORDERING INFORMATION

Device Markings Package Shipping

BC846BDW1T1G

BC847BDW1T1G

BC847BDW1T3G

BC847CDW1T1G

BC848CDW1T1G

1B

1F

1F

1G

1L

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

SOT−363

(Pb−Free)

SOT−363

(Pb−Free)

SOT−363

(Pb−Free)

SOT−363

(Pb−Free)

SOT−363

(Pb−Free)

3000 / Tape & Reel

3000 / Tape & Reel

10000 / Tape & Reel

3000 / Tape & Reel

3000 / Tape & Reel

≤

J(pk)

†

http://onsemi.com

5

BC846BDW1T1G, BC847BDW1T1G, BC848CDW1T1G

PACKAGE DIMENSIONS

SC−88 (SC70−6/SOT−363)

CASE 419B−02

E0.2 (0.008)

A3

ISSUE W

L

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.

MILLIMETERS

DIM MIN NOM MAX

A 0.80 0.95 1.10
A1 0.00 0.05 0.10
A3

b 0.10 0.21 0.30

C 0.10 0.14 0.25

D 1.80 2.00 2.20

E 1.15 1.25 1.35

e 0.65 BSC

L 0.10 0.20 0.30

H

C

STYLE 1:

PIN 1. EMITTER 2

0.20 REF 0.008 REF

2.00 2.10 2.20

E

2. BASE 2

3. COLLECTOR 1

4. EMITTER 1

5. BASE 1

6. COLLECTOR 2

INCHES

MIN NOM MAX

0.031 0.037 0.043

0.000 0.002 0.004

0.004 0.008 0.012

0.004 0.005 0.010

0.070 0.078 0.086

0.045 0.049 0.053

0.026 BSC

0.004 0.008 0.012

0.078 0.082 0.086

D

e

654

H

E

123

−E−

b 6 PL

MM

A

A1

SOLDERING FOOTPRINT*

0.50

0.0197

0.65

0.025

0.65

0.025

0.40

0.0157

1.9

0.0748

SCALE 20:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent
rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.
Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries,
affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury
or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an
Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

ǒ

inches

mm

Ǔ

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [e-mail]

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: [phone]

Japan Customer Focus Center

Phone: 81−3−5773−3850

http://onsemi.com

6

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your local
Sales Representative

BC846BDW1T1/D