Datasheet BC817-25, BC817-40, BC818-40, BC818-25, BC818-16 Datasheet (General Semiconductor)

BC817, BC818

Small Signal Transistors (NPN)

SOT-23

.122 (3.1) .118 (3.0)

.016 (0.4)

3

12

.037(0.95).037(0.95)

.016 (0.4) .016 (0.4)

Dimensions in inches and (millimeters)

Pin configur ation 1 = Base, 2 = Emitter, 3 = Collector.

Top View

)

.056 (1.43

max. .004 (0.1)

)

.052 (1.33

.007 (0.175)

.005 (0.125)

.102 (2.6) .094 (2.4)

.045 (1.15)

FEATURES

NPN Silicon Epitaxial Planar Transistors

♦

for switching, AF driver and amplifier applications.

♦

Especially suit ed for automatic inser tion in thick- and thin-film circuits.

♦

These transistors are subdivided into three groups -16,

-25 and -40 according to their current gain.

♦

As complementary types, the PNP transistors BC807 and BC808 are recommended.

.037 (0.95)

SOT-23 Plastic Package

Case: Weight:

Marking code

Type Marking

BC817-16

BC818-16

MECHANICAL DATA

approx. 0.008 g

-25

-40

-25

-40

6A 6B 6C

6E

6F

6G

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at

Collector-Em itt er Voltage BC817

Emitter-Base Voltage V Collector Curre nt I Peak Coll ect or Current I Peak Bas e Current I Peak Emitt er Current –I Power Dissipation at T Junction Temperature T Storage Temperature Range T

1)

Device on fiberglass substrate, see layout

ambient temperature unless otherwise specified

25 °C

= 50 °C P

SB

BC818

Symbol Value Unit V

V V

V

CES CES

CEO CEO

EBO

C

CM

BM

tot

j

S

EM

50 30

45 25

5V 800 mA 1000 mA 200 mA 1000 mA

1)

310 150 °C – 65 to +150 °C

V V

mW

4/98

Ratings at

ambient temperature unless otherwise specified

25 °C

DC Current Gain at V

= 1 V, IC = 100 mA

CE

Current Gain Group-16

= 1 V, IC = 300 mA -16

at V

CE

Thermal Resistance Junction Substrate Backside

BC817 THRU BC818

ELECTRICAL CHARACTERISTICS

Symbol Min. Typ. Max. Unit

-25

-40

-25

-40

h h h h h h

R

FE FE FE FE FE FE

thSB

100 160 250 60 100 170

– – 320

– – – – – –

250 400 600 – – –

– – – – – –

1)

K/W

Thermal Resistance Junction to Ambient Air R Collector Saturation Voltage

at I

= 500 mA, IB = 50 mA

C

Base-Emitter Voltage

= 1 V, IC = 300 mA

at V

CE

Collector-Emi tter Cutoff Current

= 45 V BC817

at V

CE

at V

= 25 V BC818

CE

at V

= 25 V, Tj = 150 °C

CE

Emitter-Base Cutoff Current

= 4 V

at V

EB

Gain-Bandwidth Product

= 5 V, IC = 10 mA, f = 50 MHz

at V

CE

Collector-Base Capacitance

= 10 V, f = 1 MHz

at V

CB

1)

Device on fiberglass substr ate, see lay out

V

CEsat

V

BE

I

CES

I

CES

I

CES

I

EBO

f

T

C

thJA

CBO

– – 450

1)

K/W

––0.7V

––1.2V

– – –

100 100 5

nA nA

µ

A

– – 100 nA

– 100 – MHz

–12 pF

.30 (7.5)

.12 (3)

.04 (1)

.08 (2) .04 (1)

.59 (15 )

.47 (12)

Layout for R

.03 (0.8)

0.2 (5)

.06 (1.5) .20 (5.1)

thJA

.08 ( 2)

Dimensions in inches (millimeters)

test

Thickness: Fiberglass 0.059 in (1.5 mm)

Copper leads 0.012 in (0.3 mm)

RATINGS AND CHARACTERISTIC CURVES BC817, BC818