Datasheet BC817-25, BC817-40, BC817-16, BC818-40, BC818-25 Datasheet (Siemens)

NPN Silicon AF Transistors BC 817

BC 818

● For general AF applications

● High collector current

● High current gain

● Low collector-emitter saturation voltage

● Complementary types: BC 807, BC 808 (PNP)

Type Ordering CodeMarking

BC 817-16
BC 817-25
BC 817-40
BC 818-16
BC 818-25
BC 818-40

6As
6Bs
6Cs
6Es
6Fs
6Gs

Q62702-C1732
Q62702-C1690
Q62702-C1738
Q62702-C1739
Q62702-C1740
Q62702-C1505

Pin Configuration

1 2 3

B E C

Package

SOT-23

1)

1)

For detailed information see chapter Package Outlines.

Semiconductor Group 1

07.94

BC 817

BC 818

Maximum Ratings
Parameter Symbol Values Unit

BC 817 BC 818

Collector-emitter voltage V
Collector-base voltage VCB0
Emitter-base voltage V
Collector current I
Peak collector current ICM A

CE0 V

45 25
50 30

EB0

C mA

55

500

1
Base current IB mA100
Peak base current I
Total power dissipation, T

C = 79 ˚C Ptot mW

Junction temperature Tj ˚C
Storage temperature range T

BM 200

330
150

stg

– 65 … + 150

Thermal Resistance

Junction - ambient

1)

Rth JA ≤ 285 K/W

Junction - soldering point Rth JS ≤ 215

1)

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.

Semiconductor Group 2

Electrical Characteristics

I

I

I

I

I

I

I

A = 25 ˚C, unless otherwise specified.

at T

DC characteristics

BC 817

BC 818

UnitValuesParameter Symbol

min. typ. max.

(BR)CE0

V

C = 10 mA

BC 817
BC 818

Collector-base breakdown voltage

C = 100 µA

BC 817

(BR)CB0

V

BC 818

45
25

50
30

–
–

–
–

–
–

–
–

VCollector-emitter breakdown voltage

Emitter-base breakdown voltage, IE = 10 µA V(BR)EB0 5––
Collector cutoff current

CB = 25 V

V

CB = 25 V, TA = 150 ˚C

V

I

CB0

–
–

–
–

100
50

nA

µA

nAEmitter cutoff current, VEB = 4 V IEB0 – – 100

DC current gain

C = 100 mA; VCE = 1 V

1)

BC 817-16, BC 818-16
BC 817-25, BC 818-25
BC 817-40, BC 818-40

C = 300 mA; VCE = 1 V

BC 817-16, BC 818-16
BC 817-25, BC 818-25
BC 817-40, BC 818-40

Collector-emitter saturation voltage

C = 500 mA; IB = 50 mA

Base-emitter saturation voltage

C = 500 mA; IB = 50 mA

1)

1)

FE

h

100
160
250

60
100
170

160
250
350

–
–
–

250
400
630

–
–
–

VCEsat – – 0.7

VBEsat ––2

–

V

AC characteristics

C = 50 mA, VCE = 5 V, f = 20 MHz

CB = 10 V, f = 1 MHz

V

Input capacitance

EB = 0.5 V, f = 1 MHz

V

1)

Pulse test: t ≤ 300 µs, D ≤ 2%.

Semiconductor Group 3

f

T – 170 –

C

obo –6–

C

ibo –60–

MHzTransition frequency

pFOutput capacitance

BC 817

BC 818

Total power dissipation Ptot = f (TA*; TS)

* Package mounted on epoxy

Transition frequency fT = f (IC)

CE = 5 V

V

Permissible pulse load P

tot max/Ptot DC = f (tp)

Collector cutoff current I

CB0 = 60 V

V

CB0 = f (TA)

Semiconductor Group 4

BC 817

BC 818

Base-emitter saturation voltage

C = f (VBEsat)

I

FE = 10

h

Collector-emitter saturation voltage

C = f (VCEsat)

I

FE = 10

h

DC current gain hFE = f (IC)

CE = 1 V

V

Semiconductor Group 5