Page 1
BC807/BC808
Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages
• Complement to BC817/BC818
PNP Epitaxial Silicon Transistor
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
BC807/BC808
Absolute Maximum Ratings
Ta=25°C unless otherwise noted
Symbol Parameter Value Units
V
CES
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Electrical Characteristics
Collector-Emitter Voltage
: BC807
: BC808
-50
-30
Collector-Emitter Voltage
: BC807
: BC808
-45
-25
Emitter-Base Voltage -5 V
Collector Current (DC) -800 mA
Collector Power Dissipation -310 mW
Junction Temperature 150 °C
Storage Temperature -65 ~ 150 °C
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
BV
CES
BV
EBO
I
CES
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC= -500mA, IB= -50mA -0.7 V
V
CE
(on) Base-Emitter On Voltage VCE= -1V, IC= -300mA -1.2 V
V
BE
f
T
C
ob
Collector-Emitter Breakdown Voltage
: BC807
: BC808
Collector-Emitter Breakdown Voltage
: BC807
: BC808
IC= -10mA, IB=0
-45
-25
IC= -0.1mA, VBE=0
-50
-30
Emitter-Base Breakdown Voltage IE= -0.1mA, IC=0 -5 V
Collector Cut-off Current VCE= -25V, VBE=0 -100 nA
Emitter Cut-off Current VEB= -4V, IC=0 -100 nA
DC Current Gain VCE= -1V, IC= -100mA
V
= -1V, IC= -300mA
CE
Current Gain Bandwidth Product VCE= -5V, IC= -10mA
f=50MHz
100
60
630
100
Output Capacitance VCB= -10V, f=1MHz 12 pF
V
V
V
V
V
V
V
V
MHz
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
Page 2
h
Classification
FE
Classification 16 25 40
h
FE1
h
FE2
100 ~ 250 160 ~ 400 250 ~ 630
60- 100- 170-
Marking Code
Type 807-16 807-25 807-40 808-16 808-25 808-40
Marking 9FA 9FB 9FC 9GA 9GB 9GC
BC807/BC808
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
Page 3
Typical Characteristics
BC807/BC808
= - 5.0mA
I
B
= - 4.5mA
B
I
= - 4.0mA
B
I
I
IB = - 1.0mA
IB = - 0.5mA
= - 3.5mA
B
= - 3.0mA
B
I
= - 2.5mA
B
I
I
B
IB = 0
= - 2.0mA
I
B
= - 1.5mA
-500
-400
-300
-200
-100
[mA], COLLECTOR CURRENT
C
I
-0
-0 -1 -2 -3 -4 -5
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. Static Characteristic
1000
100
10
, DC CURRENT GAIN
FE
h
1
-0.1 -1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
P
= 600mW
T
PULSE
VCE = - 2.0V
- 1.0V
= - 50
I
B
µ
I
B
A
µ
= - 10
P
= 600mW
T
A
A
µ
A
µ
A
µ
A
µ
= - 40
I
B
= - 30
I
B
= - 20
I
B
IB = 0
-20
-16
-12
I
B
= - 80
I
B
A
µ
= - 70
µ
= - 60
I
B
A
-8
[mA], COLLECTOR CURRENT
-4
C
I
-0
-0 -10 -20 -30 -40 -50
VCE[V], COLLECTOR-EMITTER VOLTAGE
VBE(sat)
VCE(sat)
IC = 10 I
PULSE
B
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-0.1 -1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage
-1000
VCE = -1V
PULSE
-100
-10
-1
[mA], COLLECTOR CURRENT
C
I
-0.1
-0.4 -0.5 -0.6 -0.7 -0.8 -0.9
VBE[V], BASE-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage Figure 6. Input Output Capacitance
©2002 Fairchild Semiconductor Corporation
Collector-Emitter Saturation Voltage
100
10
[pF], CAPACITANCE
ob
, C
ib
C
1
-0.1 -1 -10 -100
VCB[V], COLLECTOR-BASE VOLTAGE
V
[V], EMITTER-BASE VOLTAGE
EB
f = 1.0MHz
C
ib
C
ob
Rev. A2, August 2002
Page 4
BC807/BC808
Typical Characteristics
1000
100
[MHz], GAIN BANDWIDTH PRODUCT
T
f
10
-1 -10 -100
IC[mA], COLLECTOR CURRENT
Figure 7. Current Gain Bandwidth Product
VCE = -5.0V
(Continued)
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
Page 5
Package Dimensions
0.40
±0.03
BC807/BC808
SOT-23
0.20 MIN
0.45~0.60
0.95
2.90
±0.03
1.90
±0.10
0.95
±0.03
±0.03
±0.10
0.40
±0.03
0.97REF 1.30
0.508REF
±0.10
2.40
0.96~1.14
0.03~0.10
0.38 REF
+0.05
0.12
–0.023
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
Page 6
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2
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®
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2
C™
I
Across the board. Around the world.™
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®
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation Rev. I1
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Page 7
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