Page 1
NPN Silicon AF Transistors BC 635
… BC 639
● High current gain
● High collector current
● Low collector-emitter saturation voltage
● Complementary types: BC 636, BC 638,
BC 640 (PNP)
1
Type Ordering CodeMarking
Pin Configuration
Package
1 2 3
BC 635
BC 637
BC 639
– TO-92
Q68000-A3360
Q68000-A2285
Q68000-A3361
E C B
If desired, selected transistors, type BC 63 ★ –10 (hFE = 63 … 160), or BC 63 ★ –16
FE = 100 … 250) are available. Ordering codes upon request.
(h
2
3
1)
1)
For detailed information see chapter Package Outlines.
Semiconductor Group 1
5.91
Page 2
Maximum Ratings
BC 635
… BC 639
Parameter Values Unit
Symbol
BC 637BC 635 BC 639
Collector-emitter voltage V
Collector-base voltage
Emitter-base voltage
Collector current A
Peak collector current
Base current mA100
Peak base current 200
Total power dissipation, T
C = 90 ˚C
Junction temperature ˚C
Storage temperature range
V
CE0
VCB0
VEB0
IC
ICM
45 80
60
6045 100
5
1
1.5
IB
IBM
1)
Ptot
Tj
Tstg
0.8 (1)
150
– 65 … + 150
W
Thermal Resistance
Junction - ambient
Junction - case
2)
1)
Rth JA
Rth JC
≤ 156 K/W
≤ 75
1)
If the transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm × 10 mm large copper area
for the collector terminal, Rth JA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C.
2)
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group 2
Page 3
Electrical Characteristics
I
I
I
I
I
I
I
I
I
A = 25 ˚C, unless otherwise specified.
at T
DC characteristics
BC 635
… BC 639
UnitValuesParameter Symbol
min. typ. max.
(BR)CE0
V
C = 10 mA
BC 635
BC 637
BC 639
Collector-base breakdown voltage
C = 100 µA
(BR)CB0
V
BC 635
BC 637
BC 639
E = 10 µA
Collector cutoff current
Emitter-base breakdown voltage
CB = 30 V
V
CB = 30 V, TA = 150 ˚C
V
EB = 4 V
V
DC current gain
C = 5 mA; VCE = 2 V
C = 150 mA; VCE = 2 V
C = 500 mA; VCE = 2 V
Collector-emitter saturation voltage
C = 500 mA; IB = 50 mA
Base-emitter voltage
C = 500 mA; VCE = 2 V
1)
1)
1)
1)
V
(BR)EB0 5––
CB0
I
I
EB0 – – 100
FE
VCEsat – – 500
VBE) ––1
45
60
80
45
60
100
–
–
25
40
25
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
100
20
–
250
–
VCollector-emitter breakdown voltage
nA
µA
nAEmitter cutoff current
–h
mV
V
AC characteristics
C = 50 mA, VCE = 10 V, f = 20 MHz
f
T – 100 –
MHzTransition frequency
1)
Pulse test: t ≤ 300 µs, D ≤ 2%.
Semiconductor Group 3
Page 4
BC 635
… BC 639
Total power dissipation Ptot = f (TA; TC)
Collector cutoff current ICB0 = f (TA)
CB = 30 V
V
Permissible pulse load R
CE = 2 V
V
thJA = f (tp)
Collector current I
C = f (VBE)
Semiconductor Group 4
Page 5
BC 635
… BC 639
DC current gain hFE = f (IC)
CE = 2 V
V
Collector-emitter saturation voltage
CEsat = f (IC)
V
FE = 10
h
Transition frequency f
CE = 10 V, f = 20 MHz
V
T = f (IC)
Semiconductor Group 5
Loading...