Datasheet BC557BG Specification

Page 1
BC556B, BC557A, B, C, BC558B
Amplifier Transistors
PNP Silicon
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector - Emitter Voltage
BC556 BC557 BC558
Collector - Base Voltage
BC556 BC557
BC558 Emitter - Base Voltage V Collector Current − Continuous
Collector Current − Peak
Base Current − Peak I Total Device Dissipation @ TA = 25°C
Derate above 25°C Total Device Dissipation @ TC = 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
V
CEO
V
CBO
EBO
I
I
CM
BM
P
P
TJ, T
C
D
D
−55 to +150 °C
stg
−65
−45
−30
−80
−50
−30
−5.0 Vdc
−100
−200
−200 mAdc 625
5.0
1.5 12
Vdc
Vdc
mAdc
mW
mW/°C
W
mW/°C
TO−92
CASE 29
STYLE 17
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COLLECTOR
1
2
BASE
3
EMITTER
1
2
3
STRAIGHT LEAD
BULK PACK
MARKING DIAGRAM
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 3
R
q
JA
R
q
JC
200 °C/W
83.3 °C/W
1 Publication Order Number:
BC
55xx
AYWWG
G
xx = 6B, 7A, 7B, 7C, or 8B A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet.
BC556B/D
Page 2
BC556B, BC557A, B, C, BC558B
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted)
A
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
= −2.0 mAdc, IB = 0) BC556
C
Collector−Base Breakdown Voltage
= −100 mAdc) BC556
(I
C
Emitter−Base Breakdown Voltage
= −100 mAdc, IC = 0) BC556
(I
E
Collector−Emitter Leakage Current
(V
= −40 V) BC556
CES
(V
= −20 V) BC557
CES
(V
= −20 V, TA = 125°C) BC556
CES
BC557 BC558
BC557 BC558
BC557 BC558
BC558 BC557
BC558
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CES
−65
−45
−30
−80
−50
−30
−5.0
−5.0
−5.0
−2.0
−2.0
−2.0
ON CHARACTERISTICS
DC Current Gain
= −10 mAdc, VCE = −5.0 V) A Series Device
(I
C
B Series Devices C Series Devices
(IC = −2.0 mAdc, VCE = −5.0 V) BC557
A Series Device B Series Devices C Series Devices
(I
= −100 mAdc, VCE = −5.0 V) A Series Device
C
B Series Devices C Series Devices
Collector−Emitter Saturation Voltage
(I
= −10 mAdc, IB = −0.5 mAdc)
C
(I
= −10 mAdc, IB = see Note 1)
C
= −100 mAdc, IB = −5.0 mAdc)
(I
C
Base−Emitter Saturation Voltage
(I
= −10 mAdc, IB = −0.5 mAdc)
C
(IC = −100 mAdc, IB = −5.0 mAdc)
Base−Emitter On Voltage
(I
= −2.0 mAdc, VCE = −5.0 Vdc)
C
= −10 mAdc, VCE = −5.0 Vdc)
(I
C
h
V
CE(sat)
V
BE(sat)
V
BE(on)
FE
− 120 120 180 420
−0.55
90 150 270
− 170 290 500 120 180 300
−0.075
−0.3
−0.25
−0.7
−1.0
−0.62
−0.7
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
= −10 mA, VCE = −5.0 V, f = 100 MHz) BC556
C
Output Capacitance
(V
= −10 V, IC = 0, f = 1.0 MHz)
CB
Noise Figure
(I
= −0.2 mAdc, VCE = −5.0 V, BC556
C
= 2.0 kW, f = 1.0 kHz, Df = 200 Hz) BC557
R
S
Small−Signal Current Gain
(IC = −2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) BC557
A Series Device B Series Devices C Series Devices
BC557 BC558
BC558
C
NF
h
f
T
ob
fe
280 320 360
3.0 6.0 pF
125 125 240 450
2.0
2.0
2.0
1. IC = −10 mAdc on the constant base current characteristics, which yields the point IC = −1 1 mAdc, VCE = −1.0 V.
−100
−100
−100
−4.0
−4.0
−4.0
− 800 220 460 800
−0.3
−0.6
−0.65
−0.7
−0.82
10 10 10
900 260 500 900
V
V
V
nA
mA
V
V
V
MHz
dB
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2
Page 3
BC556B, BC557A, B, C, BC558B
BC557/BC558
2.0
1.5
1.0
0.7
0.5
, NORMALIZED DC CURRENT GAIN
0.3
FE
h
0.2
−2.0
−1.6
−1.2
−0.8
−0.4
, COLLECTOR−EMITTER VOLTAGE (V)
CE
V
VCE = −10 V T
= 25°C
A
−0.2
−0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −0.1
IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
TA = 25°C
−10 mA
IC = −20 mA
−0.02 −1.0
−0.1
IB, BASE CURRENT (mA)
IC = −200 mAIC = −50 mAIC =
IC = −100 mA
−100−20
V, VOLTAGE (VOLTS)
, TEMPERATURE COEFFICIENT (mV/ C)°θ
VB
−1.0
−0.9
−0.8
−0.7
−0.6
−0.5
−0.4
−0.3
−0.2
−0.1
1.0
1.2
1.6
2.0
2.4
2.8
TA = 25°C
V
@ IC/IB = 10
BE(sat)
V
@ VCE = −10 V
BE(on)
V
@ IC/IB = 10
CE(sat)
0
−0.2 −0.5
−1.0
−2.0 −5.0
IC, COLLECTOR CURRENT (mAdc)
−10
Figure 2. “Saturation” and “On” Voltages
−55°C to +125°C
−0.2
−1.0
IC, COLLECTOR CURRENT (mA)
−10 −100
−20 −50
−100
10
7.0
5.0
3.0
2.0
C, CAPACITANCE (pF)
1.0
−0.4
Figure 3. Collector Saturation Region
C
ib
TA = 25°C
C
ob
−0.6 −1.0 −2.0 −4.0 −6.0 −10 −20 −30 −40
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
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Figure 4. Base−Emitter Temperature Coefficient
400
300
200
150
100
80
60
40
30
20
T
f, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)
−0.5
−1.0 −2.0 −3.0 −5.0 −10 −20 −30 −50
IC, COLLECTOR CURRENT (mAdc)
VCE = −10 V T
= 25°C
A
Figure 6. Current−Gain − Bandwidth Product
3
Page 4
t
VCE = −5.0 V T
= 25°C
A
2.0
1.0
0.5
, DC CURRENT GAIN (NORMALIZED)
0.2
FE
h
−0.1 −1.0
−0.2
BC556B, BC557A, B, C, BC558B
−2.0
IC, COLLECTOR CURRENT (mA)
−10 −200
−5.0
−20
−50
−100
BC556
−1.0
−0.8
−0.6
−0.4
V, VOLTAGE (VOLTS)
−0.2
0
−0.2 −1.0
TJ = 25°C
V
@ IC/IB = 10
BE(sat)
VBE @ VCE = −5.0 V
V
@ IC/IB = 10
CE(sat)
−0.5 −2.0 −5.0
IC, COLLECTOR CURRENT (mA)
−20 −50 −100
−10 −200
Figure 7. DC Current Gain
−2.0
−1.6
IC =
−10 mA
−1.2
−0.8
−0.4
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
CE
V
T
= 25°C
J
−0.05 −0.2 −0.5 −2.0 −5.0
−0.02 −1.0
−20 mA
−0.1
IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
40
20
C
ib
−50 mA
−100 mA
TJ = 25°C
−200 mA
−100−20
Figure 8. “On” Voltage
−1.0
−1.4
−1.8
−2.2
−2.6
, TEMPERATURE COEFFICIENT (mV/ C)°θ
VB
−3.0
qVB for V
BE
−0.2 −2.0
−1.0
−0.5 −5.0 −20
IC, COLLECTOR CURRENT (mA)
−55°C to 125°C
−10 −200
Figure 10. Base−Emitter Temperature Coefficien
VCE = −5.0 V
500
200
−50 −100
10
8.0
6.0
C, CAPACITANCE (pF)
4.0
2.0
−0.1 −0.2 −1.0 −50
−0.5 −5.0 −20
−2.0 −10
VR, REVERSE VOLTAGE (VOLTS)
C
ob
Figure 11. Capacitance
100
50
20
T
f, CURRENT−GAIN − BANDWIDTH PRODUCT
−100
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4
−1.0 −10
IC, COLLECTOR CURRENT (mA)
−100
Figure 12. Current−Gain − Bandwidth Product
Page 5
1.0
0.7 D = 0.5
0.5
0.2
0.3
0.2
0.1
0.07
0.05
r(t), TRANSIENT THERMAL
0.03
RESISTANCE (NORMALIZED)
0.02
0.01
−200
−100
−50
−10
, COLLECTOR CURRENT (mA)
−5.0
C
I
−2.0
−1.0
BC556B, BC557A, B, C, BC558B
TA = 25°C
SINGLE PULSE
SINGLE PULSE
2.0 5.01.00.50.20.1
1 s
T
= 25°C
J
BC558 BC557 BC556
Figure 13. Thermal Response
0.05
0.1
BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT
−5.0 −10 −30 −45 −65 −100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
3 ms
Z
(t) = (t) R
P
(pk)
t
1
t
2
DUTY CYCLE, D = t1/t
q
JC
R
q
JC
Z
q
JA
R
q
JA
D CURVES APPLY FOR POWER PULSE TRAIN SHOWN
2
READ TIME AT t T
J(pk)
q
− TC = P
q
JC
(pk)
JA
1
R
= 83.3°C/W MAX
(t) = r(t) R
= 200°C/W MAX
(t)
q
JC
20 5010 200 500100 1.0k 2.0k 5.0k 10
t, TIME (ms)
The safe operating area curves indicate I
C−VCE
limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve.
The data of Figure 14 is based upon T
= 150°C; TC or TA is
J(pk)
variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided T
150°C. T
J(pk)
J(pk)
may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown.
Figure 14. Active Region − Safe Operating Area
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5
Page 6
BC556B, BC557A, B, C, BC558B
ORDERING INFORMATION
Device Package Shipping
BC556BG TO−92
(Pb−Free)
BC556BZL1G TO−92
(Pb−Free)
BC557AZL1G TO−92
(Pb−Free)
BC557BG TO−92
(Pb−Free) BC557BRL1 TO−92 2000 / Tape & Reel BC557BRL1G TO−92
(Pb−Free) BC557BZL1G TO−92
(Pb−Free) BC557CG TO−92
(Pb−Free) BC557CZL1G TO−92
(Pb−Free) BC558BRLG TO−92
(Pb−Free) BC558BRL1G TO−92
(Pb−Free) BC558BZL1G TO−92
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
5000 Units / Bulk
2000 / Ammo Box
2000 / Ammo Box
5000 Units / Bulk
2000 / Tape & Reel
2000 / Ammo Box
5000 Units / Bulk
2000 / Ammo Box
2000 / Tape & Reel
2000 / Tape & Reel
2000 / Ammo Box
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6
Page 7
BC556B, BC557A, B, C, BC558B
TO−92 (TO−226)
PACKAGE DIMENSIONS
CASE 29−1 1
ISSUE AM
SEATING PLANE
R
T
SEATING PLANE
A
B
STRAIGHT LEAD
BULK PACK
R
P
L
K
XX
V
1
G
H
C
N
D
J
SECTION X−X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533 G 0.045 0.055 1.15 1.39 H 0.095 0.105 2.42 2.66 J 0.015 0.020 0.39 0.50 K 0.500 −−− 12.70 −−− L 0.250 −−− 6.35 −−− N 0.080 0.105 2.04 2.66 P −−− 0.100 −−− 2.54 R 0.115 −−− 2.93 −−− V 0.135 −−− 3.43 −−−
MILLIMETERSINCHES
N
A
B
BENT LEAD
TAPE & REEL
AMMO PACK
P
K
XX
G
D
J
V
1
C
SECTION X−X
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.
MILLIMETERS
DIM MIN MAX
A 4.45 5.20 B 4.32 5.33 C 3.18 4.19 D 0.40 0.54 G 2.40 2.80 J 0.39 0.50 K 12.70 −−− N 2.04 2.66 P 1.50 4.00 R 2.93 −−− V 3.43 −−−
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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BC556B/D
7
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