Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
xx= 6B, 7A, 7B, 7C, or 8B
A= Assembly Location
Y= Year
WW= Work Week
G= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
BC556B/D
Page 2
BC556B, BC557A, B, C, BC558B
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted)
A
SymbolMinTypMaxUnit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
= −2.0 mAdc, IB = 0)BC556
C
Collector−Base Breakdown Voltage
= −100 mAdc)BC556
(I
C
Emitter−Base Breakdown Voltage
= −100 mAdc, IC = 0)BC556
(I
E
Collector−Emitter Leakage Current
(V
= −40 V)BC556
CES
(V
= −20 V)BC557
CES
(V
= −20 V, TA = 125°C)BC556
CES
BC557
BC558
BC557
BC558
BC557
BC558
BC558
BC557
BC558
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CES
−65
−45
−30
−80
−50
−30
−5.0
−5.0
−5.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−2.0
−2.0
−2.0
−
−
−
ON CHARACTERISTICS
DC Current Gain
= −10 mAdc, VCE = −5.0 V)A Series Device
(I
C
B Series Devices
C Series Devices
(IC = −2.0 mAdc, VCE = −5.0 V)BC557
A Series Device
B Series Devices
C Series Devices
(I
= −100 mAdc, VCE = −5.0 V)A Series Device
C
B Series Devices
C Series Devices
Collector−Emitter Saturation Voltage
(I
= −10 mAdc, IB = −0.5 mAdc)
C
(I
= −10 mAdc, IB = see Note 1)
C
= −100 mAdc, IB = −5.0 mAdc)
(I
C
Base−Emitter Saturation Voltage
(I
= −10 mAdc, IB = −0.5 mAdc)
C
(IC = −100 mAdc, IB = −5.0 mAdc)
Base−Emitter On Voltage
(I
= −2.0 mAdc, VCE = −5.0 Vdc)
C
= −10 mAdc, VCE = −5.0 Vdc)
(I
C
h
V
CE(sat)
V
BE(sat)
V
BE(on)
FE
−
−
−
120
120
180
420
−
−
−
−
−
−
−
−
−0.55
−
90
150
270
−
170
290
500
120
180
300
−0.075
−0.3
−0.25
−0.7
−1.0
−0.62
−0.7
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
= −10 mA, VCE = −5.0 V, f = 100 MHz)BC556
C
Output Capacitance
(V
= −10 V, IC = 0, f = 1.0 MHz)
CB
Noise Figure
(I
= −0.2 mAdc, VCE = −5.0 V,BC556
C
= 2.0 kW, f = 1.0 kHz, Df = 200 Hz)BC557
R
S
Small−Signal Current Gain
(IC = −2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz)BC557
A Series Device
B Series Devices
C Series Devices
BC557
BC558
BC558
C
NF
h
f
T
ob
fe
−
−
−
280
320
360
−3.06.0pF
−
−
−
125
125
240
450
2.0
2.0
2.0
−
−
−
−
1. IC = −10 mAdc on the constant base current characteristics, which yields the point IC = −1 1 mAdc, VCE = −1.0 V.
−
−
−
−
−
−
−
−
−
−100
−100
−100
−4.0
−4.0
−4.0
−
−
−
800
220
460
800
−
−
−
−0.3
−0.6
−0.65
−
−
−0.7
−0.82
−
−
−
10
10
10
900
260
500
900
V
V
V
nA
mA
−
V
V
V
MHz
dB
−
http://onsemi.com
2
Page 3
BC556B, BC557A, B, C, BC558B
BC557/BC558
2.0
1.5
1.0
0.7
0.5
, NORMALIZED DC CURRENT GAIN
0.3
FE
h
0.2
−2.0
−1.6
−1.2
−0.8
−0.4
, COLLECTOR−EMITTER VOLTAGE (V)
CE
V
VCE = −10 V
T
= 25°C
A
−0.2
−0.5 −1.0 −2.0−5.0 −10 −20−50 −100 −200−0.1
IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
TA = 25°C
−10 mA
IC = −20 mA
−0.02−1.0
−0.1
IB, BASE CURRENT (mA)
IC = −200 mAIC = −50 mAIC =
IC = −100 mA
−100−20
V, VOLTAGE (VOLTS)
, TEMPERATURE COEFFICIENT (mV/ C)°θ
VB
−1.0
−0.9
−0.8
−0.7
−0.6
−0.5
−0.4
−0.3
−0.2
−0.1
1.0
1.2
1.6
2.0
2.4
2.8
TA = 25°C
V
@ IC/IB = 10
BE(sat)
V
@ VCE = −10 V
BE(on)
V
@ IC/IB = 10
CE(sat)
0
−0.2−0.5
−1.0
−2.0−5.0
IC, COLLECTOR CURRENT (mAdc)
−10
Figure 2. “Saturation” and “On” Voltages
−55°C to +125°C
−0.2
−1.0
IC, COLLECTOR CURRENT (mA)
−10−100
−20−50
−100
10
7.0
5.0
3.0
2.0
C, CAPACITANCE (pF)
1.0
−0.4
Figure 3. Collector Saturation Region
C
ib
TA = 25°C
C
ob
−0.6−1.0−2.0−4.0 −6.0−10−20 −30 −40
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
http://onsemi.com
Figure 4. Base−Emitter Temperature Coefficient
400
300
200
150
100
80
60
40
30
20
T
f, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)
−0.5
−1.0−2.0 −3.0−5.0−10−20 −30−50
IC, COLLECTOR CURRENT (mAdc)
VCE = −10 V
T
= 25°C
A
Figure 6. Current−Gain − Bandwidth Product
3
Page 4
t
VCE = −5.0 V
T
= 25°C
A
2.0
1.0
0.5
, DC CURRENT GAIN (NORMALIZED)
0.2
FE
h
−0.1−1.0
−0.2
BC556B, BC557A, B, C, BC558B
−2.0
IC, COLLECTOR CURRENT (mA)
−10−200
−5.0
−20
−50
−100
BC556
−1.0
−0.8
−0.6
−0.4
V, VOLTAGE (VOLTS)
−0.2
0
−0.2−1.0
TJ = 25°C
V
@ IC/IB = 10
BE(sat)
VBE @ VCE = −5.0 V
V
@ IC/IB = 10
CE(sat)
−0.5−2.0−5.0
IC, COLLECTOR CURRENT (mA)
−20−50 −100
−10−200
Figure 7. DC Current Gain
−2.0
−1.6
IC =
−10 mA
−1.2
−0.8
−0.4
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
CE
V
T
= 25°C
J
−0.05−0.2−0.5−2.0−5.0
−0.02−1.0
−20 mA
−0.1
IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
40
20
C
ib
−50 mA
−100 mA
TJ = 25°C
−200 mA
−100−20
Figure 8. “On” Voltage
−1.0
−1.4
−1.8
−2.2
−2.6
, TEMPERATURE COEFFICIENT (mV/ C)°θ
VB
−3.0
qVB for V
BE
−0.2−2.0
−1.0
−0.5−5.0−20
IC, COLLECTOR CURRENT (mA)
−55°C to 125°C
−10−200
Figure 10. Base−Emitter Temperature Coefficien
VCE = −5.0 V
500
200
−50 −100
10
8.0
6.0
C, CAPACITANCE (pF)
4.0
2.0
−0.1 −0.2−1.0−50
−0.5−5.0−20
−2.0−10
VR, REVERSE VOLTAGE (VOLTS)
C
ob
Figure 11. Capacitance
100
50
20
T
f, CURRENT−GAIN − BANDWIDTH PRODUCT
−100
http://onsemi.com
4
−1.0−10
IC, COLLECTOR CURRENT (mA)
−100
Figure 12. Current−Gain − Bandwidth Product
Page 5
1.0
0.7
D = 0.5
0.5
0.2
0.3
0.2
0.1
0.07
0.05
r(t), TRANSIENT THERMAL
0.03
RESISTANCE (NORMALIZED)
0.02
0.01
−200
−100
−50
−10
, COLLECTOR CURRENT (mA)
−5.0
C
I
−2.0
−1.0
BC556B, BC557A, B, C, BC558B
TA = 25°C
SINGLE PULSE
SINGLE PULSE
2.05.01.00.50.20.1
1 s
T
= 25°C
J
BC558
BC557
BC556
Figure 13. Thermal Response
0.05
0.1
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
−5.0−10−30 −45 −65 −100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
3 ms
Z
(t) = (t) R
P
(pk)
t
1
t
2
DUTY CYCLE, D = t1/t
q
JC
R
q
JC
Z
q
JA
R
q
JA
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
2
READ TIME AT t
T
J(pk)
q
− TC = P
q
JC
(pk)
JA
1
R
= 83.3°C/W MAX
(t) = r(t) R
= 200°C/W MAX
(t)
q
JC
2050102005001001.0k2.0k5.0k10
t, TIME (ms)
The safe operating area curves indicate I
C−VCE
limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated by
the applicable curve.
The data of Figure 14 is based upon T
= 150°C; TC or TA is
J(pk)
variable depending upon conditions. Pulse curves are valid for
duty cycles to 10% provided T
≤ 150°C. T
J(pk)
J(pk)
may be
calculated from the data in Figure 13. At high case or ambient
temperatures, thermal limitations will reduce the power than can
be handled to values less than the limitations imposed by second
breakdown.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
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Email: orderlit@onsemi.com
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
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Phone: 81−3−5773−3850
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ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
BC556B/D
7
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