Datasheet BC548BTA Specification

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BC546 / BC547 / BC548 / BC549 / BC550 NPN Epitaxial Silicon Tr ansistor

Features

• Switching and Amplifier

• High-Voltage: BC546, V

• Low-Noise: BC549, BC550

• Complement to BC556, BC557, BC558, BC559, and BC560

CEO

= 65 V

1. Collector 2. Base 3. Emitter

BC546 / BC547 / BC548 / BC549 / BC550 — NPN Epitaxial Silicon Transistor

April 2014

TO-92

Ordering Information

Part Number Marking Package Packing Method

BC546ABU BC546A TO-92 3L Bulk

BC546ATA BC546A TO-92 3L Ammo BC546BTA BC546B TO-92 3L Ammo BC546BTF BC546B TO-92 3L Tape and Reel

BC546CTA BC546C TO-92 3L Ammo

BC547ATA BC547A TO-92 3L Ammo

BC547B BC547B TO-92 3L Bulk

BC547BBU BC547B TO-92 3L Bulk

BC547BTA BC547B TO-92 3L Ammo

BC547BTF BC547B TO-92 3L Tape and Reel BC547CBU BC547C TO- 92 3L Bulk BC547CTA BC547C TO-92 3L Ammo

BC547CTFR BC547C TO-92 3L Tape and Reel

BC548BU BC548 TO-92 3L Bulk

BC548BTA BC548B TO-92 3L Ammo BC548CTA BC548C TO-92 3L Ammo

BC549BTA BC549B TO-92 3L Ammo

BC549BTF BC549B TO-92 3L Tape and Reel BC549CTA BC549C TO-92 3L Ammo BC550CBU BC550C TO- 92 3L Bulk BC550CTA BC550C TO-92 3L Ammo

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Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating cond itions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T

Symbol Parameter Value Unit

BC546 80

CBO

CEO

EBO

STG

Collector-Base Voltage

BC548 / BC549 30 BC546 65

Collector-Emitter Voltage

BC548 / BC549 30

Emitter-Base Voltage

Collector Current (DC) 100 mA

Collector Power Dissipation 500 mW

Junction Temperature 150 °C

BC546 / BC547 6 BC548 / BC549 / BC550 5

Storage Temperature Range -65 to +150 °C

= 25°C unless otherwise noted.

VBC547 / BC550 50

VBC547 / BC550 45

BC546 / BC547 / BC548 / BC549 / BC550 — NPN Epitaxial Silicon Transistor

Electrical Characteristics

V a lues are at TA = 25°C unless otherwise noted.

Symbol Parameter Conditions Min. Typ. Max. Unit

CBO

VCE(sat)

VBE(sat) Collector-Base Saturation Voltage

VBE(on) Base-Emitter On Voltage

Collector Cut-Off Current V DC Current Gain V

Collector-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance V

Input Capacitance V

BC546 / BC547 / BC548

Noise Figure

BC549 / BC550 1.2 4.0 BC549 BC550 1.4 3.0

= 30 V, IE = 0 15 nA

= 5 V, IC = 2 mA 110 800

= 10 mA, IB = 0.5 mA 90 250

= 100 mA, IB = 5 mA 250 600

= 10 mA, IB = 0.5 mA 700

= 100 mA, IB = 5 mA 900

= 5 V, IC = 2 mA 580 660 700

= 5 V, IC = 10 mA 720

= 5 V, IC = 10 mA,

f = 100 MHz

= 10 V, IE = 0, f = 1 MHz 3.5 6.0 pF

= 0.5 V, IC = 0, f = 1 MHz 9 p F

= 5 V, IC = 200 μA,

f = 1 kHz, R

= 5 V, IC = 200 μA,

= 2 kΩ, f = 30 to 15000 MHz

= 2 kΩ

300 MHz

210

1.4 4.0

Classification

Classification A B C

110 ~ 220 200 ~ 450 420 ~ 800

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Typical Performance Characteristics

0 2 4 6 8 10 12 14 16 18 20

100

IB = 50μA

IB = 100μA

IB = 150μA

IB = 200μA

IB = 250μA

IB = 300μA

IB = 350μA

IB = 400μA

[mA], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.1

100

VCE = 5V

[mA], COLLECTOR CURRENT

VBE[V], BASE-EMITTER VOLTAGE

1 10 100 1000

100

1000

VCE = 5V

, DC CURRENT GAIN

IC[mA], COLLECTOR CURRENT

1 10 100 1000

100

1000

10000

IC = 10 I

VCE(sat)

VBE(sat)

(sat), V

(sat)[mV], SATURATION VOLTAGE

IC[A], COLLECTOR CURRENT

1 10 100 1000

0.1

100

f=1MHz I

= 0

[pF], CAPACITANCE

VCB[V], COLLECTOR-BASE VOLTAGE

0.1 1 10 100

100

1000

VCE = 5V

, CURRENT GAIN-BANDWIDTH PRODUCT

IC[mA], COLLECTOR CURRENT

Figure 1. Static Characteristic Figure 2. Transfer Characteristic

BC546 / BC547 / BC548 / BC549 / BC550 — NPN Epitaxial Silicon Transistor

Figure 3. DC Current Gain Figure 4. Base-Emitter Saturation Voltage and

Figure 5. Output Capacitance Figure 6. Current Gain Bandwidth Product

Collector-Emitter Saturation Voltage

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Physical Dimensions

TO-92 (Bulk)

BC546 / BC547 / BC548 / BC549 / BC550 — NPN Epitaxial Silicon Transistor

Figure 7. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3)

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/dwg/ZA/ZA03D.pdf

For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:

http://www.fairchildsemi.com/packing_dwg/PKG-ZA03D_BK.pdf

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Physical Dimensions (Continued)

TO-92 (Ammo, Tape and Reel)

BC546 / BC547 / BC548 / BC549 / BC550 — NPN Epitaxial Silicon Transistor

Figure 8. 3-LEAD, TO92, MOLDED 0.200 IN LINE SPACING LEAD FORM (J61Z OPTION)

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/dwg/ZA/ZA03F.pdf

For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:

http://www.fairchildsemi.com/packing_dwg/PKG-ZA03F_BK.pdf

Page 6

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®*

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE

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WHICH COVERS THESE PRODUCTS.

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Definition of Terms

Datasheet Identification

Product Status

Definition

Advance

Information

Formative

In Design

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary First Production

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I68