Datasheet BC517-D Datasheet (ON Semiconductor)

BC517

l

s

Darlington Transistors

NPN Silicon

Features

• These are Pb−Free Devices*

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COLLECTOR 1

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V
Collector−Base Voltage V
Collector−Emitter Voltage V
Collector Current − Continuous I
Total Power Dissipation @ TA = 25°C

Derate above T

Total Power Dissipation @ TA = 25°C

Derate above T

Operating and Storage Junction
Temperature Range

= 25°C

A

= 25°C

A

TJ, T

CES

CB
EB
C

P

P

D

D

stg

30 Vdc
40 Vdc
10 Vdc

1.0 Adc

625

12

1.5
12

−55 to +150 °C

mW

mW/°C

W

mW/°C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case

Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

R

q

JA

R

q

JC

200 °C/W

83.3 °C/W

TO−92

CASE 29

STYLE 17

BASE

2

EMITTER 3

1

2

3

STRAIGHT LEAD

BULK PACK

MARKING DIAGRAM

BC

517

AYWWG

G

1

2

3

BENT LEAD

TAPE & REEL

AMMO PACK

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2007

March, 2007 − Rev. 4

1 Publication Order Number:

A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

Device Package Shipping

BC517G TO−92

(Pb−Free)

BC517RL1G TO−92

(Pb−Free)

BC517ZL1G TO−92

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD801 1/D.

5000 Units / Bulk

2000 / Tape & Ree

2000 / Ammo Pack

BC517/D

†

BC517

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(I

= 2.0 mAdc, IBE = 0)

C

Collector−Base Breakdown Voltage

= 10 mAdc, IE = 0)

(I

C

Emitter−Base Breakdown Voltage

= 100 mAdc, IC = 0)

(I

E

Collector Cutoff Current

(V

= 30 Vdc)

CE

Collector Cutoff Current

(VCB = 30 Vdc, IE = 0)

Emitter Cutoff Current

(VCB = 10 Vdc, IC = 0)

ON CHARACTERISTICS (Note 1)

DC Current Gain

(I

= 20 mAdc, VCE = 2.0 Vdc)

C

Collector−Emitter Saturation Voltage

(I

= 100 mAdc, IB = 0.1 mAdc)

C

Collector−Emitter Saturation Voltage

(I

= 10 mAdc, VCE = 5.0 Vdc)

C

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (Note 2)

(I

= 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)

C

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
= |hfe| • f

2. f

T

test

V

(BR)CES

V

(BR)CBO

V

(BR)EBO

I

CES

I

CBO

I

EBO

h

V

CE(sat)

V

BE(on)

f

FE

T

30 − −

Vdc

Vdc

40 − −

Vdc

10 − −

nAdc

− − 500
nAdc

− − 100
nAdc

− − 100

−

30,000 − −

Vdc

− − 1.0

Vdc

− − 1.4

MHz

− 200 −

R

S

i

n

e

n

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model

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2

BC517

NOISE CHARACTERISTICS

(VCE = 5.0 Vdc, TA = 25°C)

500

200

100

50

, NOISE VOLTAGE (nV)

20

n

e

5.0
101020 50 100 200 500 1k 2k 5k 10k 20k 50k 100k

BANDWIDTH = 1.0 Hz
R

≈ 0

S

IC = 1.0 mA

f, FREQUENCY (Hz)

10 mA

100 mA

Figure 2. Noise Voltage

200

BANDWIDTH = 10 Hz TO 15.7 kHz

100

70

IC = 10 mA

50

30

20

, TOTAL WIDEBAND NOISE VOLTAGE (nV)

T

V

10

100 mA

1.0 mA

1.0

2.0 5.0 10 20 50 100 200 500 1000
RS, SOURCE RESISTANCE (kW)

2.0

1.0

0.7

0.5

0.3

0.2

0.1

, NOISE CURRENT (pA)

n

0.07

i

0.05

0.03

0.02
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k

BANDWIDTH = 1.0 Hz

IC = 1.0 mA

100 mA

10 mA

f, FREQUENCY (Hz)

Figure 3. Noise Current

14

12

10

8.0

6.0

4.0

NF, NOISE FIGURE (dB)

IC = 1.0 mA

2.0

0

1.0 2.0 5.0 10 20 50 100 200 500 1000

RS, SOURCE RESISTANCE (kW)

BANDWIDTH = 10 Hz TO 15.7 kHz

10 mA

100 mA

Figure 4. Total Wideband Noise Voltage

Figure 5. Wideband Noise Figure

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3

BC517

SMALL−SIGNAL CHARACTERISTICS

20

10

7.0

5.0

C, CAPACITANCE (pF)

3.0

2.0

0.04

200k

100k

70k
50k

30k
20k

10k

, DC CURRENT GAIN

FE

7.0k

h

5.0k

3.0k

2.0k

5.0

TJ = 25°C

C

ibo

0.1 0.2 0.4 1.0 2.0 4.0 10 20 40
VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Capacitance

TJ = 125°C

25°C

−55°C

7.0 10 20 30 50 70 100 200 300
IC, COLLECTOR CURRENT (mA)

VCE = 5.0 V

4.0
VCE = 5.0 V

f = 100 MHz

= 25°C

T

J

2.0

1.0

C

obo

0.8

0.6

0.4

|, SMALL−SIGNAL CURRENT GAIN

fe

|h

0.2

0.5 1.0 2.0 0.5 10 20 50 100 200 500
IC, COLLECTOR CURRENT (mA)

Figure 7. High Frequency Current Gain

3.0
TJ = 25°C

2.5

500

IC =

2.0

1.5

1.0

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

CE

V

0.5

0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000

50 mA 250 mA 500 mA

10 mA

IB, BASE CURRENT (mA)

V, VOLTAGE (VOLTS)

Figure 8. DC Current Gain

1.6

TJ = 25°C

1.4

V

@ IC/IB = 1000

BE(sat)

1.2

V

@ VCE = 5.0 V

BE(on)

1.0

0.8
V

CE(sat)

@ IC/IB = 1000

0.6

5.0

7.0 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)

Figure 10. “On” Voltages

−1.0

−2.0

−3.0

−4.0

−5.0

, TEMPERATURE COEFFICIENTS (mV/ C)°

V

θ

R

−6.0

5.0 7.0 10 20 30 50 70 100 200 300 500

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4

Figure 9. Collector Saturation Region

*APPLIES FOR IC/IB ≤ hFE/3.0

*R

FOR V

q

qVB FOR V

CE(sat)

VC

BE

IC, COLLECTOR CURRENT (mA)

25°C TO 125°C

−55°C TO 25°C

25°C TO 125°C

−55°C TO 25°C

Figure 11. Temperature Coefficients

1.0

a

0.7
D = 0.5

0.5

0.2

0.3

0.2

0.1

0.1

0.07

0.05

0.03

RESISTANCE (NORMALIZED)

0.02

0.05

SINGLE PULSE

SINGLE PULSE

BC517

Z
Z

q

JC(t)

q

JA(t)

= r(t) • R
= r(t) • R

T
T

J(pk)

J(pk)

− TC = P

− TA = P

q

JC

q

JA

(pk)

(pk)

Z

q

JC(t)

Z

q

JA(t)

0.01

, COLLECTOR CURRENT (mA)
I

2.0 5.01.00.50.20.1

1.0k
700

500

T

300

200

TA = 25°C

= 25°C

C

100

70
50

30

C

20

CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT

10

0.4

0.6 1.0 2.0 4.0 6.0 10 20
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 13. Active Region Safe Operating Area

20 5010 200 500100 1.0k 2.0k 5.0k 10k

t, TIME (ms)

Figure 12. Thermal Response

1.0 ms

100 ms

1.0 s

40

Design Note: Use of Transient Thermal Resistance Dat

FIGURE A

t

P

P

P

t

1

1/f

DUTYCYCLE + t1f +

PEAK PULSE POWER = P

P

P

t

1

t

P

P

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5

BC517

TO−92 (TO−226)

PACKAGE DIMENSIONS

CASE 29−1 1

ISSUE AM

SEATING
PLANE

R

T

SEATING
PLANE

A

B

STRAIGHT LEAD

BULK PACK

R

P

L

K

XX

V

1

G

H

C

N

D

J

SECTION X−X

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.

DIM MIN MAX MIN MAX

A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 −−− 12.70 −−−
L 0.250 −−− 6.35 −−−
N 0.080 0.105 2.04 2.66
P −−− 0.100 −−− 2.54
R 0.115 −−− 2.93 −−−
V 0.135 −−− 3.43 −−−

MILLIMETERSINCHES

N

A

B

BENT LEAD

TAPE & REEL

AMMO PACK

P

K

XX

G

D

J

V

1

C

SECTION X−X

N

NOTES:

1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.

MILLIMETERS

DIM MIN MAX

A 4.45 5.20
B 4.32 5.33
C 3.18 4.19
D 0.40 0.54
G 2.40 2.80
J 0.39 0.50
K 12.70 −−−
N 2.04 2.66
P 1.50 4.00
R 2.93 −−−
V 3.43 −−−

STYLE 17:

PIN 1. COLLECTOR

2. BASE

3. EMITTER

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BC517/D

6