Datasheet BC517, BC517ZL1, BC517RL1 Datasheet (ON Semiconductor)

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SEMICONDUCTOR TECHNICAL DATA

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NPN Silicon

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
Total Power Dissipation @ TA = 25°C

Derate above 25°C

Total Power Dissipation @ TC = 25°C

Derate above 25°C

Operating and Storage Junction

T emperature Range

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to

Ambient

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (T

Characteristic

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 2.0 mAdc, VBE = 0)

Collector–Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)

Emitter–Base Breakdown Voltage

(IE = 100 nAdc, IC = 0)

Collector Cutoff Current

(VCE = 30 Vdc)

Collector Cutoff Current

(VCB = 30 Vdc, IE = 0)

Emitter Cutoff Current

(VEB = 10 Vdc, IC = 0)

CES

CB
EB

C

P

D

P

D

TJ, T

stg

R

q

JA

R

q

JC

= 25°C unless otherwise noted)

A

COLLECTOR 1

BASE

2

EMITTER 3

30 Vdc
40 Vdc
10 Vdc

1.0 Adc

625

12

1.5
12

–55 to +150 °C

200 °C/W

83.3 °C/W

mW

mW/°C

Watts

mW/°C

Order this document

by BC517/D

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1

2

3

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

Symbol Min Typ Max Unit

V

(BR)CES

V

(BR)CBO

V

(BR)EBO

I

CES

I

CBO

I

EBO

30 — — Vdc

40 — — Vdc

10 — — Vdc

— — 500 nAdc

— — 100 nAdc

— — 100 nAdc

Motorola Small–Signal Transistors, FETs and Diodes Device Data

 Motorola, Inc. 1996

1

BC517

ELECTRICAL CHARACTERISTICS

Characteristic

ON CHARACTERISTICS

DC Current Gain

(IC = 20 mAdc, VCE = 2.0 Vdc)

Collector–Emitter Saturation Voltage

(IC = 100 mAdc, IB = 0.1 mAdc)

Base–Emitter On Voltage

(IC = 10 mAdc, VCE = 5.0 Vdc)

(1)

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)

1. Pulse Test: Pulse Width v 2.0%.

2. fT = |hfe| • f

test

(2)

(TA = 25°C unless otherwise noted) (Continued)

Symbol Min Typ Max Unit

h

V

CE(sat)

V

BE(on)

R

S

i

n

e

n

IDEAL

TRANSISTOR

FE

f

30,000 — — —

— — 1.0 Vdc

— — 1.4 Vdc

T

— 200 — MHz

Figure 1. Transistor Noise Model

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

NOISE CHARACTERISTICS

(VCE = 5.0 Vdc, TA = 25°C)

BC517

500

200

100

50

, NOISE VOLTAGE (nV)

20

n

e

5.0
101020 50 100 200 500 1 k 2 k 5 k 10 k 20k 50 k 100 k

BANDWIDTH = 1.0 Hz

≈

0

RS

100 µA

IC = 1.0 mA

f, FREQUENCY (Hz)

10 µA

Figure 2. Noise V oltage

200

BANDWIDTH = 10 Hz TO 15.7 kHz

100

IC = 10 µA

70
50

100 µA

30

20

, TOT AL WIDEBAND NOISE VOL TAGE (nV)

T

V

1.0 mA

10

2.0 5.0 10 20 50 100 200 500 100

1.0

RS, SOURCE RESISTANCE (kΩ)

2.0

1.0

0.7

0.5

0.3

0.2

0.1

, NOISE CURRENT (pA)

n

0.07

i

0.05

0.03

0.02

14
12

10

8.0

6.0

4.0

NF, NOISE FIGURE (dB)

2.0

0

BANDWIDTH = 1.0 Hz

IC = 1.0 mA

100 µA

10 µA

10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50k 100 k

f, FREQUENCY (Hz)

Figure 3. Noise Current

BANDWIDTH = 10 Hz TO 15.7 kHz

10 µA

100 µA

IC = 1.0 mA

0

1.0 2.0 5.0 10 20 50 100 200 500 100
RS, SOURCE RESISTANCE (kΩ)

0

Figure 4. T otal Wideband Noise Voltage

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 5. Wideband Noise Figure

3

BC517

SMALL–SIGNAL CHARACTERISTICS

C, CAPACITANCE (pF)

200 k

100 k

70 k
50 k

30 k
20 k

10 k

, DC CURRENT GAIN

FE

7.0 k

h

5.0 k

3.0 k

2.0 k

20

10

7.0

5.0

3.0

2.0

0.1 0.2 0.4 1.0 2.0 4.0 10 20 40

0.04
VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Capacitance

TJ = 125°C

25°C

–55°C

7.0 10 20 30 50 70 100 200 300

5.0
IC, COLLECTOR CURRENT (mA)

TJ = 25°C

C

ibo

VCE = 5.0 V

C

obo

500

4.0
VCE = 5.0 V

f = 100 MHz
TJ = 25

°

2.0

1.0

0.8

0.6

0.4

|, SMALL–SIGNAL CURRENT GAIN

fe

|h

0.2

0.5 1.0 2.0 0.5 10 20 50 100 200 500

C

IC, COLLECTOR CURRENT (mA)

Figure 7. High Frequency Current Gain

3.0

TJ = 25°C

2.5

IC =

2.0

1.5

1.0

, COLLECTOR–EMITTER VOL TAGE (VOLTS)

CE

V

0.5

0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000

50 mA 250 mA 500 mA

10 mA

IB, BASE CURRENT (µA)

V, VOLTAGE (VOLTS)

Figure 8. DC Current Gain

1.6
TJ = 25°C

1.4

V

@ IC/IB = 1000

BE(sat)

1.2

V

@ VCE = 5.0 V

BE(on)

1.0

0.8

0.6

V

@ IC/IB = 1000

CE(sat)

5.0

7.0 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)

Figure 10. “On” Voltages

Figure 9. Collector Saturation Region

–1.0

°

, TEMPERATURE COEFFICIENTS (mV/ C)
R

*APPLIES FOR IC/IB ≤ hFE/3.0

*R

–2.0

–3.0

–4.0

–5.0

V

θ

–6.0

5.0 7.0 10 20 30 50 70 100 200 300 500

FOR V

q

VC

qVB FOR V

CE(sat)

BE

IC, COLLECTOR CURRENT (mA)

25°C TO 125°C

–55°C TO 25°C

25°C TO 125°C

–55°C TO 25°C

Figure 11. Temperature Coefficients

4

Motorola Small–Signal Transistors, FETs and Diodes Device Data

1.0

0.7
D = 0.5

0.5

0.2

0.3

0.2

0.1

0.1

0.07

0.05

r(t), TRANSIENT THERMAL

0.03

RESISTANCE (NORMALIZED)

0.02

0.05

SINGLE PULSE

SINGLE PULSE

Z
Z

θ

JC(t)

θ

JA(t)

= r(t)
= r(t)

•

R

θ

•

R

θ

JCTJ(pk)
JATJ(pk)

– TC = P
– TA = P

(pk) Zθ

(pk) Zθ

BC517

JC(t)

JA(t)

0.01

1.0 k
700

500
300

200

100

70
50

30

, COLLECTOR CURRENT (mA)

C

I

20

10

TA = 25°C

CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT

0.4

0.6 1.0 2.0 4.0 6.0 10 20
VCE, COLLECTOR–EMITTER VOL TAGE (VOLTS)

2.0 5.01.00.50.20.1

TC = 25°C

Figure 13. Active Region Safe Operating Area

20 5010 200 500100 1.0 k 2.0k 5.0 k 10k

t, TIME (ms)

Figure 12. Thermal Response

1.0 ms

100 µs

1.0 s

40

Design Note: Use of Transient Thermal Resistance Data

FIGURE A

t

P

P

P

t

1

1/f

t

DUTY CYCLE
PEAK PULSE POWER = P

+

t1f

1

+

t

P
P

P

P

Motorola Small–Signal Transistors, FETs and Diodes Device Data

5

BC517

SEATING
PLANE

P ACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

A

B

R

P

L

F

K

D

XX

G

J

H
V

1

C

N

SECTION X–X

N

CASE 029–04

(TO–226AA)

ISSUE AD

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.

4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.

DIM MIN MAX MIN MAX

A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.022 0.41 0.55
F 0.016 0.019 0.41 0.48
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
N 0.080 0.105 2.04 2.66
P ––– 0.100 ––– 2.54
R 0.115 ––– 2.93 –––
V 0.135 ––– 3.43 –––

STYLE 17:

PIN 1. COLLECTOR

2. BASE

3. EMITTER

MILLIMETERSINCHES

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Motorola Small–Signal Transistors, FETs and Diodes Device Data

BC517/D

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