Datasheet BC450A, BC450 Datasheet (Motorola)

1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

  

PNP Silicon

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V

CEO

–100 Vdc

Collector–Base Voltage V

CBO

–100 Vdc

Emitter–Base Voltage V

EBO

–5.0 Vdc

Collector Current — Continuous I

C

–300 mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25°C

P

D

625

5.0

mW

mW/°C

Total Device Dissipation @ TC = 25°C

Derate above 25°C

P

D

1.5
12

Watt

mW/°C

Operating and Storage Junction

Temperature Range

TJ, T

stg

–55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Ambient

R

q

JA

200 °C/W

Thermal Resistance, Junction to Case

R

q

JC

83.3 °C/W

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(1)

(IC = –1.0 mAdc, IB = 0)

V

(BR)CEO

–100 — — Vdc

Collector–Base Breakdown Voltage

(IC = –100 mA, IE = 0)

V

(BR)CBO

–100 — — Vdc

Emitter–Base Breakdown Voltage

(IE = –10 mAdc, IC = 0)

V

(BR)EBO

–5.0 — — Vdc

Collector Cutoff Current

(VCB = –80 Vdc, IE = 0)

I

CBO

— — –100 nAdc

ON CHARACTERISTICS*

DC Current Gain

(IC = –2.0 mA, VCE = –5.0 V) BC450

BC450A

(IC = –10 mA, VCE = –5.0 V) BC450

BC450A

(IC = –100 mA, VCE = –5.0 V) BC450

BC450A

h

FE

50

120

50

100

50
60

—
—
—
—
—
—

460
220

—
—
—
—

—

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle 2.0%.

Order this document

by BC450/D

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SEMICONDUCTOR TECHNICAL DATA



CASE 29–04, STYLE 17

TO–92 (TO–226AA)

1

2

3

 Motorola, Inc. 1996

COLLECTOR

1

2

BASE

3

EMITTER

BC450,A

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol Min Typ Max Unit

ON CHARACTERISTICS

(1)

(Continued)

Collector–Emitter Saturation Voltage

(IC = –100 mAdc, IB = –10 mAdc)

V

CE(sat)

— –0.125 –0.25 Vdc

Base–Emitter Saturation Voltage

(IC = –100 mAdc, IB = –10 mAdc)

V

BE(sat)

— –0.85 — Vdc

Base–Emitter On Voltage

(IC = –2.0 mA, VCE = –5.0 V)
(IC = –100 mA, VCE = –5.0 V)*

V

BE(on)

–0.55

—

—

–0.76

–0.7
–1.2

Vdc

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = –50 mAdc, VCE = –5.0 Vdc, f = 100 MHz)

f

T

100 200 — MHz

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle 2.0%.

5.0 µs

+10 V

0

V

in

5.0

µ

F

100

100

TURN–ON TIME

–1.0 V

V

CC

+40 V
R

L

OUTPUT

*CS < 6.0 pF

tr = 3.0 ns

5.0 µs

V

in

5.0

µ

F

100

100

TURN–OFF TIME

+V

BB

V

CC

+40 V
R

L

OUTPUT

*CS < 6.0 pF

tr = 3.0 ns

R

B

R

B

*Total Shunt Capacitance of Test Jig and Connectors

For PNP Test Circuits, Reverse All Voltage Polarities

Figure 1. Switching Time Test Circuits

BC450,A

3

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Figure 2. Current–Gain — Bandwidth Product

IC, COLLECTOR CURRENT (mA)

–100–70–50–30–20–10–7.0–5.0–3.0–2.0–1.0

300

200

100

70

50

30

TJ = 25

°

C

VCE = –1.0 V

–5.0 V

f , CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)

T

C, CAPACITANCE (pF)

t, TIME (ns)

Figure 3. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

–100–50–20–10–5.0–2.0–1.0–0.5–0.2–0.1

40

20

10

8.0

6.0

2.0

TJ = 25

°

C

C

obo

C

ibo

4.0

Figure 4. Switching Times

IC, COLLECTOR CURRENT (mA)

–200–100–70–50–30–20–10

1000

VCC = –40 V
IC/IB = 10
IB1 = I

B2

TJ = 25

°

C

700
500

300
200

100

70
50

30
20

10

t

s

t

f

t

r

td @ V

BE(off)

= –0.5 V

Figure 5. Thermal Response

t, TIME (ms)

1.0

r(t) TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

0.01

0.02

0.03

0.05

0.07

0.1

0.2

0.3

0.5

0.7

1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k

50 k

100 k

D = 0.5

0.2

0.1

0.02

0.01

SINGLE PULSE

DUTY CYCLE, D = t1/t

2

D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN–469)
T

J(pk)

– TC = P

(pk)

Z

θ

JC(t)

T

J(pk)

– TA = P

(pk)

Z

θ

JA(t)

t

1

t

2

P

(pk)

Z

θ

JC(t)

= r(t)

•

R

θ

JC

Z

θ

JA(t)

= r(t)

•

R

θ

JA

SINGLE PULSE

BC450,A

4

Motorola Small–Signal Transistors, FETs and Diodes Device Data

VCE, COLLECTOR–EMITTER VOLTAGE (V)

–1K

–1.0

I

C

, COLLECTOR CURRENT (mA)

THERMAL LIMIT
SECOND BREAKDOWN LIMIT
CURRENT LIMIT
DUTY CYCLE

≤

10%

BC450

–500

–200

–100

–50

–20

–10

–2.0 –5.0 –10 –20 –50 –80

Figure 6. Active Region — Safe Operating Area

IC, COLLECTOR CURRENT (mA)

Figure 7. “On” Voltages

V, VOLTAGE (VOLTS)

1.0

0.8

0.6

0.4

0.2

0

0.2 20020

TJ = 25°C

VBE @ VCE = 5.0 V

V

CE(sat)

@ IC/IB = 10

0.5 1.0 5.0 10 50 100

V

BE(sat)

@ IC/IB = 10

IB, BASE CURRENT (mA)

Figure 8. Collector Saturation Region

V

CE

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

2.0

1.6

1.2

0.8

0.4

0

0.1 101.0

TJ = 25°C

IC =

10 mA

0.02 0.05 0.2 0.5 2.0 5.0 20

20 mA 100 mA 200 mA

50 mA

IC, COLLECTOR CURRENT (mA)

Figure 9. Base–Emitter Temperature Coefficient

–1.0

–3.0

1.0 10010

R

θ

VB

for V

BE

0.2 0.5 2.0 5.0 20 50 200

–1.4

–1.8

–2.2

–2.6

–55°C to 125°C

2.0

Figure 10. DC Current Gain

IC, COLLECTOR CURRENT (mA)

300

–0.2 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0

–10 –20 –30 –50 –70 –100 –200

200

100

70

50

30

h

FE

, DC CURRENT GAIN

TJ = 125°C

25°C

–55°C

VCE = –5.0 V

°

, TEMPERATURE COEFFICIENT (mV/ C)

VB

θ

R

BC450,A

5

Motorola Small–Signal Transistors, FETs and Diodes Device Data

, COLLECTOR–EMITTER VOLTAGE (VOL

TS)

IC, COLLECTOR CURRENT (mA)

Figure 11. “On” Voltages

V, VOLTAGE (VOLTS)

1.0

0.8

0.6

0.4

0.2

0

0.2 2.0 20020

TJ = 25°C

VBE @ VCE = 5.0 V

V

CE(sat)

@ IC/IB = 10

0.5 1.0 5.0 10 50 100

V

BE(sat)

@ IC/IB = 10

IB, BASE CURRENT (mA)

Figure 12. Collector Saturation Region

2.0

1.6

1.2

0.8

0.4

0

0.1 101.0

TJ = 25°C

IC =

10 mA

0.02 0.05 0.2 0.5 2.0 5.0 20

20 mA 100 mA 200 mA50 mA

IC, COLLECTOR CURRENT (mA)

Figure 13. Base–Emitter Temperature Coefficient

–1.0

–3.0

1.0 10010

R

θ

VB

for V

BE

0.2 0.5 2.0 5.0 20 50 200

–1.4

–1.8

–2.2

–2.6

–55°C to 125°C

R

VB

, TEMPERATURE COEFFICIENT (mV/ C)

°

θ

CE

V

BC450,A

6

Motorola Small–Signal Transistors, FETs and Diodes Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.

4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.

R

A

P

J

L

F

B

K

G

H

SECTION X–X

C

V

D

N

N

X X

SEATING
PLANE

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.022 0.41 0.55
F 0.016 0.019 0.41 0.48
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
N 0.080 0.105 2.04 2.66
P ––– 0.100 ––– 2.54
R 0.115 ––– 2.93 –––
V 0.135 ––– 3.43 –––

1

CASE 029–04

(TO–226AA)

ISSUE AD

STYLE 17:

PIN 1. COLLECTOR

2. BASE

3. EMITTER

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BC450/D

*BC450/D*

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