Page 1
DESCRI PTION
The BC393is asilicon planarepitaxial PNPtransistorinJedecTO-18metal case,designed forgeneral
purpose high-voltage and video amplifier applications.
The complementary NPN type is the BC394.
INTERN AL SCHEMAT IC DI AG R AM
BC393
HIGH VOLTAGE AMPLIFIER
TO-18
ABSOLUTE M AXI MUM RAT IN G S
Symbol Parameter Value Unit
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
January 1989
Collector-base Voltage (IE=0) –180 V
Collector-emitter Voltage (IB=0) –180 V
Emitter-base Voltage (IC=0) –6 V
Collector Current – 100 mA
Total Power Dissipation at T
at T
Storage Temperature – 55 to 200 °C
Junction Temperature 200 °C
j
amb
case
≤ 25 °C
≤ 25 °C
0.4
1.4
W
W
1/5
Page 2
BC393
THERMAL DATA
R
th j-case
R
th j-amb
ELECTRICAL CHARACTERISTICS (T
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
amb
Max
Max
=25°C unless otherwise specified)
125
440
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CB O
V
(B R) CBO
Collector Cutoff Current
(I
= 0) VCB=–100V
E
VCB= – 100 V T
Collector-base Breakdown
amb
=150°C
50
50
Voltage (IE = 0) IC=–10µA–180 V
V
(BR) CEO
V
(BR) EBO
V
V
* Pulsed : pulse duration = 300 µs, dut y cycle = 1 %.
* Collector-emitter B reakdown
Voltage (I
= 0) IC=– 2mA – 180 V
B
Emiter-base Breakdown
CE (sat) *
Voltage (I
Collector-emitter Saturation
= 0) IE=–10µA–6 V
C
Voltage IC=–10mA
I
BE ( sat) *
Base-emitter Saturation
Voltage I
IC=–50mA
h
* DC Curent Gain IC=–1mA
FE
IC=–10mA
f
T
C
CBO
Transition frequency IC= – 1 0 mA VCE= – 1 0 V 50 95 MHz
Collector-base
Capacitance IE=0
f = 1 MHz
=–50mA
C
=–10mA
C
=–1mA
I
B
I
=–5mA
B
IB=–1mA
IB=–5mA
VCE=–10V
VCE=–10V 50
VCB=–10V
–100
–300 mV
–230
–750
–900 mV
–850
85
100
47pF
°C/W
°C/W
nA
µA
mV
mV
DC Current Gain. Collector-emitter Saturation Voltage.
2/5
Page 3
Base-emitter Saturation Voltage. Transition Frequency.
BC393
3/5
Page 4
BC393
TO-18 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 12.7 0.500
B 0.49 0.019
D 5.3 0.208
E 4.9 0.193
F 5.8 0.228
G 2.54 0.100
H 1.2 0.047
I 1.16 0.045
L45
o
mm inch
o
45
I
H
4/5
G
F
E
L
DA
B
C
0016043
Page 5
BC393
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringementof patents or other rights of third parties which may results from its use. No
license is grantedby implication or otherwise under anypatent orpatent rights of SGS-THOMSON Microelectronics.Specificationsmentioned
in this publicationare subject to change without notice.This publication supersedes and replaces all information previouslysupplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedforuseas criticalcomponents in life supportdevicesor systems without express
written approvalof SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All RightsReserved
Australia - Brazil - France - Germany - Hong Kong - Italy -Japan - Korea - Malaysia - Malta - Morocco- The Netherlands -
Singapore -Spain - Sweden - Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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